SE0103471D0 - Pressure sensor - Google Patents

Pressure sensor

Info

Publication number
SE0103471D0
SE0103471D0 SE0103471A SE0103471A SE0103471D0 SE 0103471 D0 SE0103471 D0 SE 0103471D0 SE 0103471 A SE0103471 A SE 0103471A SE 0103471 A SE0103471 A SE 0103471A SE 0103471 D0 SE0103471 D0 SE 0103471D0
Authority
SE
Sweden
Prior art keywords
sensor
cavity
diaphragm
wafer
monocrystalline
Prior art date
Application number
SE0103471A
Other languages
English (en)
Inventor
Pelle Rangsten
Edvard Kaalvesten
Marianne Mechbach
Original Assignee
Silex Microsystems Ab Electrum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silex Microsystems Ab Electrum filed Critical Silex Microsystems Ab Electrum
Priority to SE0103471A priority Critical patent/SE0103471D0/sv
Publication of SE0103471D0 publication Critical patent/SE0103471D0/sv
Priority to PCT/SE2002/001884 priority patent/WO2003034016A1/en
Priority to EP02778155.8A priority patent/EP1436582B1/en
Priority to US10/492,612 priority patent/US6973835B2/en
Priority to US11/250,548 priority patent/US7207227B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49004—Electrical device making including measuring or testing of device or component part
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49007—Indicating transducer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
SE0103471A 2001-10-15 2001-10-15 Pressure sensor SE0103471D0 (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE0103471A SE0103471D0 (sv) 2001-10-15 2001-10-15 Pressure sensor
PCT/SE2002/001884 WO2003034016A1 (en) 2001-10-15 2002-10-15 Pressure sensor
EP02778155.8A EP1436582B1 (en) 2001-10-15 2002-10-15 Pressure sensor
US10/492,612 US6973835B2 (en) 2001-10-15 2002-10-15 Pressure sensor
US11/250,548 US7207227B2 (en) 2001-10-15 2005-10-17 Pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0103471A SE0103471D0 (sv) 2001-10-15 2001-10-15 Pressure sensor

Publications (1)

Publication Number Publication Date
SE0103471D0 true SE0103471D0 (sv) 2001-10-15

Family

ID=20285687

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0103471A SE0103471D0 (sv) 2001-10-15 2001-10-15 Pressure sensor

Country Status (4)

Country Link
US (2) US6973835B2 (sv)
EP (1) EP1436582B1 (sv)
SE (1) SE0103471D0 (sv)
WO (1) WO2003034016A1 (sv)

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US7455666B2 (en) 2001-07-13 2008-11-25 Board Of Regents, The University Of Texas System Methods and apparatuses for navigating the subarachnoid space
US7093495B2 (en) * 2003-07-28 2006-08-22 Cts Corporation Pressure sensor
EP1692457A4 (en) * 2003-12-11 2007-09-26 Proteus Biomedical Inc IMPLANT PRESSURE SENSORS
US7231829B2 (en) * 2005-03-31 2007-06-19 Medtronic, Inc. Monolithic integrated circuit/pressure sensor on pacing lead
US9616223B2 (en) 2005-12-30 2017-04-11 Medtronic, Inc. Media-exposed interconnects for transducers
US7670895B2 (en) 2006-04-24 2010-03-02 Freescale Semiconductor, Inc Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer
US7528078B2 (en) * 2006-05-12 2009-05-05 Freescale Semiconductor, Inc. Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
EP1860418A1 (en) * 2006-05-23 2007-11-28 Sensirion AG A method for fabricating a pressure sensor using SOI wafers
EP2275793A1 (en) * 2006-05-23 2011-01-19 Sensirion Holding AG A pressure sensor having a chamber and a method for fabricating the same
CN101815933A (zh) * 2007-08-27 2010-08-25 皇家飞利浦电子股份有限公司 压力传感器、包括压力传感器的传感器探头、包括传感器探头的医疗设备、以及制造传感器探头的方法
WO2010022095A1 (en) * 2008-08-20 2010-02-25 Icu Medical, Inc. Anti-reflux vial adaptors
EP2159558A1 (en) * 2008-08-28 2010-03-03 Sensirion AG A method for manufacturing an integrated pressure sensor
US8723276B2 (en) * 2008-09-11 2014-05-13 Infineon Technologies Ag Semiconductor structure with lamella defined by singulation trench
US7832279B2 (en) 2008-09-11 2010-11-16 Infineon Technologies Ag Semiconductor device including a pressure sensor
EP2182340A1 (en) 2008-10-30 2010-05-05 Radi Medical Systems AB Pressure Sensor and Guide Wire Assembly
US20100109104A1 (en) * 2008-10-30 2010-05-06 Radi Medical Systems Ab Pressure sensor and wire guide assembly
US8471346B2 (en) * 2009-02-27 2013-06-25 Infineon Technologies Ag Semiconductor device including a cavity
WO2011044387A2 (en) * 2009-10-07 2011-04-14 The Board Of Regents Of The University Of Texas System Pressure-sensing medical devices, systems and methods, and methods of forming medical devices
JP5687202B2 (ja) * 2009-11-04 2015-03-18 ローム株式会社 圧力センサおよび圧力センサの製造方法
EP2377809A1 (en) 2010-04-16 2011-10-19 SensoNor Technologies AS Method for Manufacturing a Hermetically Sealed Structure
US8518732B2 (en) 2010-12-22 2013-08-27 Infineon Technologies Ag Method of providing a semiconductor structure with forming a sacrificial structure
SE537180C2 (sv) 2010-11-12 2015-02-24 St Jude Medical Systems Ab Extrakorporeal gränssnittsenhet för ett intravaskulärt mätningssystem
SE537177C2 (sv) 2011-10-28 2015-02-24 St Jude Medical Systems Ab Medicinskt system för bestämning av Fractional Flow Reserve(FFR) värdet
SE1151051A1 (sv) 2011-11-09 2013-05-10 Koninklijke Philips Electronics Nv Sensorstyrtråd
SE536219C2 (sv) 2011-12-05 2013-07-02 St Jude Medical Systems Ab Aktiv brusutsläckningsanordning för medicinska intrakorporeala sensorer
US8714021B2 (en) * 2012-02-27 2014-05-06 Amphenol Thermometrics, Inc. Catheter die and method of fabricating the same
TWI477752B (zh) * 2012-05-02 2015-03-21 Nat Applied Res Laboratories Piezoelectric vacuum gauge and its measuring method
CN103063351B (zh) * 2012-12-21 2016-05-11 上海华虹宏力半导体制造有限公司 微机电系统压力传感器及其制作方法、微机电系统
US9176018B2 (en) * 2013-02-22 2015-11-03 Bin Qi Micromachined ultra-miniature piezoresistive pressure sensor and method of fabrication of the same
GB2513594B (en) 2013-04-30 2015-09-02 Kidde Tech Inc Method of manufacturing a pressure sensor
EP2871456B1 (en) 2013-11-06 2018-10-10 Invensense, Inc. Pressure sensor and method for manufacturing a pressure sensor
EP2871455B1 (en) 2013-11-06 2020-03-04 Invensense, Inc. Pressure sensor
CN103616123B (zh) * 2013-11-22 2016-04-13 中航（重庆）微电子有限公司 压力传感器及其制作方法
CN104865001B (zh) * 2014-02-22 2018-01-12 苏州亘科医疗科技有限公司 微机械超小型压阻式压力传感器及其制造方法
US9352955B2 (en) * 2014-03-27 2016-05-31 Maxim Integrated Products, Inc. MEMS pressure sensor with improved insensitivity to thermo-mechanical stress
EP3614115B1 (en) 2015-04-02 2024-09-11 InvenSense, Inc. Pressure sensor
NL2015640B1 (en) 2015-10-21 2017-05-11 Technaton B V Photonic Integrated Circuit (PIC), pressure sensing system comprising such a PIC and method for pressure sensing using such a pressure sensing system.
US11225409B2 (en) 2018-09-17 2022-01-18 Invensense, Inc. Sensor with integrated heater
EP3969868A1 (en) 2019-05-17 2022-03-23 InvenSense, Inc. A pressure sensor with improve hermeticity
JP7486457B2 (ja) 2021-04-01 2024-05-17 三菱電機株式会社 半導体圧力センサ及び半導体圧力センサの製造方法

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JPS5828876A (ja) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp 半導体圧力センサ装置
US4996082A (en) 1985-04-26 1991-02-26 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
US5095401A (en) 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
US5291788A (en) * 1991-09-24 1994-03-08 Kabushiki Kaisha Toshiba Semiconductor pressure sensor
JP2729005B2 (ja) 1992-04-01 1998-03-18 三菱電機株式会社 半導体圧力センサ及びその製造方法
FR2700003B1 (fr) 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu.
US5749226A (en) * 1993-02-12 1998-05-12 Ohio University Microminiature stirling cycle cryocoolers and engines
US5578843A (en) * 1994-10-06 1996-11-26 Kavlico Corporation Semiconductor sensor with a fusion bonded flexible structure
EP0822398B1 (en) 1996-07-31 2003-04-23 STMicroelectronics S.r.l. Integrated piezoresistive pressure sensor and relative fabrication method
US6140144A (en) * 1996-08-08 2000-10-31 Integrated Sensing Systems, Inc. Method for packaging microsensors
JP3426498B2 (ja) * 1997-08-13 2003-07-14 株式会社日立ユニシアオートモティブ 圧力センサ
US6499354B1 (en) * 1998-05-04 2002-12-31 Integrated Sensing Systems (Issys), Inc. Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices
DE19839123C1 (de) * 1998-08-27 1999-11-04 Siemens Ag Mikromechanische Struktur
US6422088B1 (en) * 1999-09-24 2002-07-23 Denso Corporation Sensor failure or abnormality detecting system incorporated in a physical or dynamic quantity detecting apparatus
JP4710147B2 (ja) * 2000-06-13 2011-06-29 株式会社デンソー 半導体圧力センサ

Also Published As

Publication number Publication date
US6973835B2 (en) 2005-12-13
US20060032039A1 (en) 2006-02-16
US7207227B2 (en) 2007-04-24
WO2003034016A1 (en) 2003-04-24
US20040237285A1 (en) 2004-12-02
EP1436582A1 (en) 2004-07-14
EP1436582B1 (en) 2017-03-22

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