DE69314840T2 - Ohmischer Kontakt auf einer Verbindungshalbleiterschicht - Google Patents

Ohmischer Kontakt auf einer Verbindungshalbleiterschicht

Info

Publication number
DE69314840T2
DE69314840T2 DE69314840T DE69314840T DE69314840T2 DE 69314840 T2 DE69314840 T2 DE 69314840T2 DE 69314840 T DE69314840 T DE 69314840T DE 69314840 T DE69314840 T DE 69314840T DE 69314840 T2 DE69314840 T2 DE 69314840T2
Authority
DE
Germany
Prior art keywords
layer
type
superlattice
inas
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69314840T
Other languages
German (de)
English (en)
Other versions
DE69314840D1 (de
Inventor
Yasushi Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Publication of DE69314840D1 publication Critical patent/DE69314840D1/de
Application granted granted Critical
Publication of DE69314840T2 publication Critical patent/DE69314840T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DE69314840T 1992-04-28 1993-04-28 Ohmischer Kontakt auf einer Verbindungshalbleiterschicht Expired - Fee Related DE69314840T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4109500A JPH05304290A (ja) 1992-04-28 1992-04-28 オーミック電極

Publications (2)

Publication Number Publication Date
DE69314840D1 DE69314840D1 (de) 1997-12-04
DE69314840T2 true DE69314840T2 (de) 1998-05-28

Family

ID=14511840

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69314840T Expired - Fee Related DE69314840T2 (de) 1992-04-28 1993-04-28 Ohmischer Kontakt auf einer Verbindungshalbleiterschicht

Country Status (4)

Country Link
US (1) US5604356A (cg-RX-API-DMAC10.html)
EP (1) EP0568050B1 (cg-RX-API-DMAC10.html)
JP (1) JPH05304290A (cg-RX-API-DMAC10.html)
DE (1) DE69314840T2 (cg-RX-API-DMAC10.html)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2309337B (en) * 1993-03-02 1997-10-08 Samsung Electronics Co Ltd Semiconductor devices
JPH07234389A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd 半導体光素子
JP2005260255A (ja) * 1996-02-19 2005-09-22 Sharp Corp 化合物半導体装置及びその製造方法
US6133592A (en) * 1996-02-19 2000-10-17 Sharp Kabushiki Kaisha Compound semiconductor device and method for producing the same
TW406337B (en) * 1997-06-07 2000-09-21 Nat Science Council Low offset voltage aluminum indium arsen/gallium indium arsen hetreo-junction bipolar transistor (HBT)
US6043143A (en) * 1998-05-04 2000-03-28 Motorola, Inc. Ohmic contact and method of manufacture
DE10125711C2 (de) * 2001-05-28 2003-12-24 Ipag Innovative Proc Ag Halbleiterbauelement und Verfahren zum Herstellen eines Halbleiterbauelements
JP4895520B2 (ja) * 2005-03-28 2012-03-14 日本電信電話株式会社 ショットキーダイオードおよびその製造方法
US7177061B2 (en) * 2005-05-31 2007-02-13 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability
US7495314B2 (en) * 2005-09-26 2009-02-24 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Ohmic contact on p-type GaN
TWI497569B (zh) * 2012-04-18 2015-08-21 國立中央大學 Used in the integration of compound semiconductor components in silicon or germanium substrate crystal structure
US9605677B2 (en) 2012-07-23 2017-03-28 Emerson Climate Technologies, Inc. Anti-wear coatings for scroll compressor wear surfaces
US9196769B2 (en) 2013-06-25 2015-11-24 L-3 Communications Cincinnati Electronics Corporation Superlattice structures and infrared detector devices incorporating the same
US10056477B1 (en) * 2017-05-24 2018-08-21 Palo Alto Research Center Incorporated Nitride heterojunction bipolar transistor with polarization-assisted alloy hole-doped short-period superlattice emitter or collector layers
US12279444B2 (en) 2021-04-12 2025-04-15 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US12289901B2 (en) 2021-04-12 2025-04-29 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US12125902B2 (en) 2021-04-12 2024-10-22 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US12125801B2 (en) 2021-04-12 2024-10-22 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US12317532B2 (en) 2021-04-12 2025-05-27 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US12274082B2 (en) 2021-04-12 2025-04-08 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US12148713B2 (en) 2021-04-12 2024-11-19 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US20220328673A1 (en) * 2021-04-12 2022-10-13 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801984A (en) * 1980-06-12 1989-01-31 International Business Machines Corporation Semiconductor ohmic contact
JPS5932902B2 (ja) * 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
JPS6028268A (ja) * 1983-07-26 1985-02-13 Agency Of Ind Science & Technol 半導体装置
US4797716A (en) * 1984-04-04 1989-01-10 The United States Of America As Represented By The United States Department Of Energy Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields
EP0268512B1 (en) * 1986-10-22 1994-05-25 Fujitsu Limited Semiconductor device utilizing the resonant-tunneling effect
US4914488A (en) * 1987-06-11 1990-04-03 Hitachi, Ltd. Compound semiconductor structure and process for making same
JP3093774B2 (ja) * 1990-04-02 2000-10-03 住友電気工業株式会社 電極構造

Also Published As

Publication number Publication date
DE69314840D1 (de) 1997-12-04
EP0568050A2 (en) 1993-11-03
EP0568050B1 (en) 1997-10-29
EP0568050A3 (cg-RX-API-DMAC10.html) 1994-01-19
JPH05304290A (ja) 1993-11-16
US5604356A (en) 1997-02-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee