GB2309337B - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB2309337B GB2309337B GB9703514A GB9703514A GB2309337B GB 2309337 B GB2309337 B GB 2309337B GB 9703514 A GB9703514 A GB 9703514A GB 9703514 A GB9703514 A GB 9703514A GB 2309337 B GB2309337 B GB 2309337B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR930002962 | 1993-03-02 | ||
GB9403816A GB2275822B (en) | 1993-03-02 | 1994-02-28 | Semiconductor devices |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9703514D0 GB9703514D0 (en) | 1997-04-09 |
GB2309337A GB2309337A (en) | 1997-07-23 |
GB2309337B true GB2309337B (en) | 1997-10-08 |
Family
ID=26304400
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9703514A Expired - Fee Related GB2309337B (en) | 1993-03-02 | 1994-02-28 | Semiconductor devices |
GB9703577A Withdrawn GB2307345A (en) | 1993-03-02 | 1994-02-28 | Semiconductor device contact structure |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9703577A Withdrawn GB2307345A (en) | 1993-03-02 | 1994-02-28 | Semiconductor device contact structure |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB2309337B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU186972U1 (en) * | 2018-04-09 | 2019-02-12 | федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" | Device for controlling the resistivity of ohmic contacts to semiconductor layers |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5126805A (en) * | 1989-11-24 | 1992-06-30 | Gte Laboratories Incorporated | Junction field effect transistor with SiGe contact regions |
US5169803A (en) * | 1990-11-28 | 1992-12-08 | Nec Corporation | Method of filling contact holes of a semiconductor device |
EP0552968A2 (en) * | 1992-01-23 | 1993-07-28 | Samsung Electronics Co. Ltd. | Semiconductor device including a wiring layer |
EP0568050A2 (en) * | 1992-04-28 | 1993-11-03 | Nec Corporation | Ohmic contact on a compound semiconductor layer |
-
1994
- 1994-02-28 GB GB9703514A patent/GB2309337B/en not_active Expired - Fee Related
- 1994-02-28 GB GB9703577A patent/GB2307345A/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5126805A (en) * | 1989-11-24 | 1992-06-30 | Gte Laboratories Incorporated | Junction field effect transistor with SiGe contact regions |
US5169803A (en) * | 1990-11-28 | 1992-12-08 | Nec Corporation | Method of filling contact holes of a semiconductor device |
EP0552968A2 (en) * | 1992-01-23 | 1993-07-28 | Samsung Electronics Co. Ltd. | Semiconductor device including a wiring layer |
EP0568050A2 (en) * | 1992-04-28 | 1993-11-03 | Nec Corporation | Ohmic contact on a compound semiconductor layer |
Also Published As
Publication number | Publication date |
---|---|
GB2309337A (en) | 1997-07-23 |
GB9703577D0 (en) | 1997-04-09 |
GB9703514D0 (en) | 1997-04-09 |
GB2307345A (en) | 1997-05-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20090228 |