DE69313807T2 - Halbleiterlaser mit Begrenzungsschicht aus AlGaInP - Google Patents

Halbleiterlaser mit Begrenzungsschicht aus AlGaInP

Info

Publication number
DE69313807T2
DE69313807T2 DE69313807T DE69313807T DE69313807T2 DE 69313807 T2 DE69313807 T2 DE 69313807T2 DE 69313807 T DE69313807 T DE 69313807T DE 69313807 T DE69313807 T DE 69313807T DE 69313807 T2 DE69313807 T2 DE 69313807T2
Authority
DE
Germany
Prior art keywords
algainp
semiconductor laser
layer made
boundary layer
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69313807T
Other languages
English (en)
Other versions
DE69313807D1 (de
Inventor
Ichiro Yoshida
Tsukuru Katsuyama
Jun-Ichi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34928092A external-priority patent/JPH06204613A/ja
Priority claimed from JP18834193A external-priority patent/JPH077230A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69313807D1 publication Critical patent/DE69313807D1/de
Publication of DE69313807T2 publication Critical patent/DE69313807T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2209—GaInP based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
DE69313807T 1992-12-28 1993-12-27 Halbleiterlaser mit Begrenzungsschicht aus AlGaInP Expired - Fee Related DE69313807T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34928092A JPH06204613A (ja) 1992-12-28 1992-12-28 半導体レーザ
JP9438293 1993-04-21
JP18834193A JPH077230A (ja) 1993-04-21 1993-07-29 屈折率反導波型半導体レーザ

Publications (2)

Publication Number Publication Date
DE69313807D1 DE69313807D1 (de) 1997-10-16
DE69313807T2 true DE69313807T2 (de) 1998-01-22

Family

ID=27307531

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313807T Expired - Fee Related DE69313807T2 (de) 1992-12-28 1993-12-27 Halbleiterlaser mit Begrenzungsschicht aus AlGaInP

Country Status (4)

Country Link
US (1) US5586135A (de)
EP (1) EP0604965B1 (de)
CA (1) CA2112319C (de)
DE (1) DE69313807T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5764671A (en) * 1996-10-21 1998-06-09 Motorola, Inc. VCSEL with selective oxide transition regions
US6461884B1 (en) * 2001-01-05 2002-10-08 Manijeh Razeghi Diode laser
JP2006245341A (ja) * 2005-03-03 2006-09-14 Mitsubishi Electric Corp 半導体光素子
JP2007250896A (ja) * 2006-03-16 2007-09-27 Sumitomo Electric Ind Ltd 半導体光素子
US20100260915A1 (en) * 2009-04-09 2010-10-14 The Folgers Coffee Company Ground roast coffee tablet
CN106384771B (zh) * 2016-10-25 2019-01-11 华灿光电（浙江）有限公司 AlGaInP基发光二极管外延片、芯片及制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181493A (ja) * 1988-01-09 1989-07-19 Sharp Corp 端面窓型半導体レーザ素子
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
US5146466A (en) * 1988-09-29 1992-09-08 Sanyo Electric Co., Ltd. Semiconductor laser device
JP2978530B2 (ja) * 1990-06-05 1999-11-15 富士通株式会社 半導体レーザ装置
JPH04150087A (ja) * 1990-10-12 1992-05-22 Mitsubishi Electric Corp 可視光半導体レーザ装置
US5210767A (en) * 1990-09-20 1993-05-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
JP3129779B2 (ja) * 1991-08-30 2001-01-31 株式会社東芝 半導体レーザ装置
JP3242967B2 (ja) * 1992-01-31 2001-12-25 株式会社東芝 半導体発光素子
US5222090A (en) * 1992-03-05 1993-06-22 Mcdonnell Douglas Corporation 700-850 nanometer semiconductor diode laser

Also Published As

Publication number Publication date
CA2112319C (en) 1999-01-05
US5586135A (en) 1996-12-17
CA2112319A1 (en) 1994-06-29
EP0604965B1 (de) 1997-09-10
DE69313807D1 (de) 1997-10-16
EP0604965A1 (de) 1994-07-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee