DE69311790T2 - Verfahren und Vorrichtung zur Wartung einer Kammer zur Aufdampfung des Siliziums mittels einer mit Inertgas gefüllten Wartungskammer - Google Patents

Verfahren und Vorrichtung zur Wartung einer Kammer zur Aufdampfung des Siliziums mittels einer mit Inertgas gefüllten Wartungskammer

Info

Publication number
DE69311790T2
DE69311790T2 DE69311790T DE69311790T DE69311790T2 DE 69311790 T2 DE69311790 T2 DE 69311790T2 DE 69311790 T DE69311790 T DE 69311790T DE 69311790 T DE69311790 T DE 69311790T DE 69311790 T2 DE69311790 T2 DE 69311790T2
Authority
DE
Germany
Prior art keywords
maintenance
chamber
silicon
vapor deposition
inert gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69311790T
Other languages
English (en)
Other versions
DE69311790D1 (de
Inventor
David K Carlson
Norma B Riley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69311790D1 publication Critical patent/DE69311790D1/de
Publication of DE69311790T2 publication Critical patent/DE69311790T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/07—Hoods
DE69311790T 1992-12-11 1993-12-01 Verfahren und Vorrichtung zur Wartung einer Kammer zur Aufdampfung des Siliziums mittels einer mit Inertgas gefüllten Wartungskammer Expired - Fee Related DE69311790T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/989,248 US5316794A (en) 1992-12-11 1992-12-11 Method for servicing vacuum chamber using non-reactive gas-filled maintenance enclosure

Publications (2)

Publication Number Publication Date
DE69311790D1 DE69311790D1 (de) 1997-07-31
DE69311790T2 true DE69311790T2 (de) 1997-12-18

Family

ID=25534908

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69311790T Expired - Fee Related DE69311790T2 (de) 1992-12-11 1993-12-01 Verfahren und Vorrichtung zur Wartung einer Kammer zur Aufdampfung des Siliziums mittels einer mit Inertgas gefüllten Wartungskammer

Country Status (5)

Country Link
US (2) US5316794A (de)
EP (1) EP0601461B1 (de)
JP (1) JPH06260437A (de)
KR (1) KR100312241B1 (de)
DE (1) DE69311790T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5908504A (en) * 1995-09-20 1999-06-01 Memc Electronic Materials, Inc. Method for tuning barrel reactor purge system
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US5746834A (en) * 1996-01-04 1998-05-05 Memc Electronics Materials, Inc. Method and apparatus for purging barrel reactors
DE19704533C2 (de) 1997-02-06 2000-10-26 Siemens Ag Verfahren zur Schichterzeugung auf einer Oberfläche
JP3270730B2 (ja) 1997-03-21 2002-04-02 株式会社日立国際電気 基板処理装置及び基板処理方法
US6105435A (en) * 1997-10-24 2000-08-22 Cypress Semiconductor Corp. Circuit and apparatus for verifying a chamber seal, and method of depositing a material onto a substrate using the same
US6089969A (en) * 1998-04-02 2000-07-18 Vanguard International Semiconductor Corporation Powder-proof apparatus for a PECVD reactor chamber
US6161311A (en) * 1998-07-10 2000-12-19 Asm America, Inc. System and method for reducing particles in epitaxial reactors
US6568896B2 (en) 2001-03-21 2003-05-27 Applied Materials, Inc. Transfer chamber with side wall port
EP4056740A1 (de) * 2021-03-10 2022-09-14 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit epitaktischer schicht in einer kammer eines abscheidereaktors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4412812A (en) * 1981-12-28 1983-11-01 Mostek Corporation Vertical semiconductor furnace
JPS58197262A (ja) * 1982-05-13 1983-11-16 Canon Inc 量産型真空成膜装置及び真空成膜法
US4640223A (en) * 1984-07-24 1987-02-03 Dozier Alfred R Chemical vapor deposition reactor
JPS62104036A (ja) * 1985-10-31 1987-05-14 Nippon Tairan Kk 半導体処理装置
JPS63262470A (ja) * 1987-04-21 1988-10-28 Hitachi Electronics Eng Co Ltd 気相反応装置
US5020475A (en) * 1987-10-15 1991-06-04 Epsilon Technology, Inc. Substrate handling and transporting apparatus
FR2621887B1 (fr) * 1987-10-20 1990-03-30 Sgn Soc Gen Tech Nouvelle Confinement dynamique et accostage sans contact
JP2859632B2 (ja) * 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
FR2659782B1 (fr) * 1990-03-14 1992-06-12 Sgn Soc Gen Tech Nouvelle Procede et dispositif de separation dynamique de deux zones.
JPH04297025A (ja) * 1991-01-10 1992-10-21 Nec Corp 半導体製造装置

Also Published As

Publication number Publication date
KR940016442A (ko) 1994-07-23
US5316794A (en) 1994-05-31
KR100312241B1 (ko) 2004-05-20
EP0601461A1 (de) 1994-06-15
DE69311790D1 (de) 1997-07-31
US5411593A (en) 1995-05-02
JPH06260437A (ja) 1994-09-16
EP0601461B1 (de) 1997-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee