DE69311790D1 - Verfahren und Vorrichtung zur Wartung einer Kammer zur Aufdampfung des Siliziums mittels einer mit Inertgas gefüllten Wartungskammer - Google Patents
Verfahren und Vorrichtung zur Wartung einer Kammer zur Aufdampfung des Siliziums mittels einer mit Inertgas gefüllten WartungskammerInfo
- Publication number
- DE69311790D1 DE69311790D1 DE69311790T DE69311790T DE69311790D1 DE 69311790 D1 DE69311790 D1 DE 69311790D1 DE 69311790 T DE69311790 T DE 69311790T DE 69311790 T DE69311790 T DE 69311790T DE 69311790 D1 DE69311790 D1 DE 69311790D1
- Authority
- DE
- Germany
- Prior art keywords
- maintenance
- chamber
- silicon
- vapor deposition
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/07—Hoods
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/989,248 US5316794A (en) | 1992-12-11 | 1992-12-11 | Method for servicing vacuum chamber using non-reactive gas-filled maintenance enclosure |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69311790D1 true DE69311790D1 (de) | 1997-07-31 |
DE69311790T2 DE69311790T2 (de) | 1997-12-18 |
Family
ID=25534908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69311790T Expired - Fee Related DE69311790T2 (de) | 1992-12-11 | 1993-12-01 | Verfahren und Vorrichtung zur Wartung einer Kammer zur Aufdampfung des Siliziums mittels einer mit Inertgas gefüllten Wartungskammer |
Country Status (5)
Country | Link |
---|---|
US (2) | US5316794A (de) |
EP (1) | EP0601461B1 (de) |
JP (1) | JPH06260437A (de) |
KR (1) | KR100312241B1 (de) |
DE (1) | DE69311790T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5908504A (en) * | 1995-09-20 | 1999-06-01 | Memc Electronic Materials, Inc. | Method for tuning barrel reactor purge system |
US5997588A (en) * | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US5746834A (en) * | 1996-01-04 | 1998-05-05 | Memc Electronics Materials, Inc. | Method and apparatus for purging barrel reactors |
DE19704533C2 (de) | 1997-02-06 | 2000-10-26 | Siemens Ag | Verfahren zur Schichterzeugung auf einer Oberfläche |
JP3270730B2 (ja) | 1997-03-21 | 2002-04-02 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法 |
US6105435A (en) * | 1997-10-24 | 2000-08-22 | Cypress Semiconductor Corp. | Circuit and apparatus for verifying a chamber seal, and method of depositing a material onto a substrate using the same |
US6089969A (en) * | 1998-04-02 | 2000-07-18 | Vanguard International Semiconductor Corporation | Powder-proof apparatus for a PECVD reactor chamber |
US6161311A (en) * | 1998-07-10 | 2000-12-19 | Asm America, Inc. | System and method for reducing particles in epitaxial reactors |
US6568896B2 (en) | 2001-03-21 | 2003-05-27 | Applied Materials, Inc. | Transfer chamber with side wall port |
EP4056740A1 (de) * | 2021-03-10 | 2022-09-14 | Siltronic AG | Verfahren zum herstellen von halbleiterscheiben mit epitaktischer schicht in einer kammer eines abscheidereaktors |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4412812A (en) * | 1981-12-28 | 1983-11-01 | Mostek Corporation | Vertical semiconductor furnace |
JPS58197262A (ja) * | 1982-05-13 | 1983-11-16 | Canon Inc | 量産型真空成膜装置及び真空成膜法 |
US4640223A (en) * | 1984-07-24 | 1987-02-03 | Dozier Alfred R | Chemical vapor deposition reactor |
JPS62104036A (ja) * | 1985-10-31 | 1987-05-14 | Nippon Tairan Kk | 半導体処理装置 |
JPS63262470A (ja) * | 1987-04-21 | 1988-10-28 | Hitachi Electronics Eng Co Ltd | 気相反応装置 |
US5020475A (en) * | 1987-10-15 | 1991-06-04 | Epsilon Technology, Inc. | Substrate handling and transporting apparatus |
FR2621887B1 (fr) * | 1987-10-20 | 1990-03-30 | Sgn Soc Gen Tech Nouvelle | Confinement dynamique et accostage sans contact |
JP2859632B2 (ja) * | 1988-04-14 | 1999-02-17 | キヤノン株式会社 | 成膜装置及び成膜方法 |
FR2659782B1 (fr) * | 1990-03-14 | 1992-06-12 | Sgn Soc Gen Tech Nouvelle | Procede et dispositif de separation dynamique de deux zones. |
JPH04297025A (ja) * | 1991-01-10 | 1992-10-21 | Nec Corp | 半導体製造装置 |
-
1992
- 1992-12-11 US US07/989,248 patent/US5316794A/en not_active Expired - Lifetime
-
1993
- 1993-11-25 KR KR1019930025242A patent/KR100312241B1/ko not_active IP Right Cessation
- 1993-12-01 EP EP93119366A patent/EP0601461B1/de not_active Expired - Lifetime
- 1993-12-01 DE DE69311790T patent/DE69311790T2/de not_active Expired - Fee Related
- 1993-12-10 JP JP5310537A patent/JPH06260437A/ja active Pending
- 1993-12-14 US US08/167,675 patent/US5411593A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR940016442A (ko) | 1994-07-23 |
US5316794A (en) | 1994-05-31 |
DE69311790T2 (de) | 1997-12-18 |
KR100312241B1 (ko) | 2004-05-20 |
EP0601461A1 (de) | 1994-06-15 |
US5411593A (en) | 1995-05-02 |
JPH06260437A (ja) | 1994-09-16 |
EP0601461B1 (de) | 1997-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |