DE69125765D1 - Methode und Gerät zur Steuerung eines Plasmaverfahrens - Google Patents

Methode und Gerät zur Steuerung eines Plasmaverfahrens

Info

Publication number
DE69125765D1
DE69125765D1 DE69125765T DE69125765T DE69125765D1 DE 69125765 D1 DE69125765 D1 DE 69125765D1 DE 69125765 T DE69125765 T DE 69125765T DE 69125765 T DE69125765 T DE 69125765T DE 69125765 D1 DE69125765 D1 DE 69125765D1
Authority
DE
Germany
Prior art keywords
controlling
plasma process
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125765T
Other languages
English (en)
Other versions
DE69125765T2 (de
Inventor
Hitoshi Tamura
Tamotsu Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69125765D1 publication Critical patent/DE69125765D1/de
Application granted granted Critical
Publication of DE69125765T2 publication Critical patent/DE69125765T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32293—Microwave generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
DE69125765T 1990-08-20 1991-08-06 Methode und Gerät zur Steuerung eines Plasmaverfahrens Expired - Fee Related DE69125765T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2217049A JP3056772B2 (ja) 1990-08-20 1990-08-20 プラズマの制御方法ならびにプラズマ処理方法およびその装置

Publications (2)

Publication Number Publication Date
DE69125765D1 true DE69125765D1 (de) 1997-05-28
DE69125765T2 DE69125765T2 (de) 1997-10-09

Family

ID=16698031

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125765T Expired - Fee Related DE69125765T2 (de) 1990-08-20 1991-08-06 Methode und Gerät zur Steuerung eines Plasmaverfahrens

Country Status (5)

Country Link
US (1) US5266364A (de)
EP (1) EP0472045B1 (de)
JP (1) JP3056772B2 (de)
KR (1) KR950000653B1 (de)
DE (1) DE69125765T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804033A (en) * 1990-09-26 1998-09-08 Hitachi, Ltd. Microwave plasma processing method and apparatus
KR920014373A (ko) * 1990-12-03 1992-07-30 제임스 조렙 드롱 Vhf/uhf 공진 안테나 공급원을 사용하는 플라즈마 반응기 및 플라즈마를 발생시키는 방법
US5888413A (en) * 1995-06-06 1999-03-30 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US5939831A (en) * 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US6039834A (en) 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
US6029602A (en) * 1997-04-22 2000-02-29 Applied Materials, Inc. Apparatus and method for efficient and compact remote microwave plasma generation
US6026762A (en) * 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6274058B1 (en) 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers
TW578448B (en) * 2000-02-15 2004-03-01 Tokyo Electron Ltd Active control of electron temperature in an electrostatically shielded radio frequency plasma source
JP4727057B2 (ja) * 2001-03-28 2011-07-20 忠弘 大見 プラズマ処理装置
JP4801522B2 (ja) * 2006-07-21 2011-10-26 株式会社日立ハイテクノロジーズ 半導体製造装置及びプラズマ処理方法
US8292142B2 (en) 2007-07-25 2012-10-23 Mitsuboshi Diamond Industrial Co., Ltd. Manual breaker
SI23626A (sl) 2011-01-19 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda za dinamično nadzorovanje gostote nevtralnih atomov v plazemski vakuumski komori in napravaza obdelavo trdih materialov s to metodo
WO2012173698A1 (en) 2011-06-15 2012-12-20 Applied Materials, Inc. Methods and apparatus for controlling photoresist line width roughness with enhanced electron spin control
US9186610B2 (en) 2013-03-12 2015-11-17 Camfil Usa, Inc. Roomside replaceable fan filter unit
WO2014204598A1 (en) 2013-06-17 2014-12-24 Applied Materials, Inc. Enhanced plasma source for a plasma reactor
US9941126B2 (en) * 2013-06-19 2018-04-10 Tokyo Electron Limited Microwave plasma device
US10249475B2 (en) 2014-04-01 2019-04-02 Applied Materials, Inc. Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation
US10032604B2 (en) 2015-09-25 2018-07-24 Applied Materials, Inc. Remote plasma and electron beam generation system for a plasma reactor

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55141729A (en) * 1979-04-21 1980-11-05 Nippon Telegr & Teleph Corp <Ntt> Ion-shower device
JPS59114798A (ja) * 1982-12-22 1984-07-02 島田理化工業株式会社 マイクロ波プラズマ装置
US4727293A (en) * 1984-08-16 1988-02-23 Board Of Trustees Operating Michigan State University Plasma generating apparatus using magnets and method
DE3566194D1 (en) * 1984-08-31 1988-12-15 Hitachi Ltd Microwave assisting sputtering
JPH0736359B2 (ja) * 1985-08-09 1995-04-19 理化学研究所 プラズマ発生装置
US4776918A (en) * 1986-10-20 1988-10-11 Hitachi, Ltd. Plasma processing apparatus
US4853102A (en) * 1987-01-07 1989-08-01 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
US4876983A (en) * 1987-01-19 1989-10-31 Hitachi, Ltd. Plasma operation apparatus
JPH0754759B2 (ja) * 1987-04-27 1995-06-07 日本電信電話株式会社 プラズマ処理方法および装置並びにプラズマ処理装置用モード変換器
ES2040914T3 (es) * 1988-03-24 1993-11-01 Siemens Aktiengesellschaft Procedimiento y dispositivo para la elaboracion de capas semiconductoras que consisten de aleaciones amorfas de silicio-germanio segun la tecnica de descarga de efluvios, sobre todo para celulas solares.
JPH0216732A (ja) * 1988-07-05 1990-01-19 Mitsubishi Electric Corp プラズマ反応装置
DE3843098A1 (de) * 1988-12-21 1990-06-28 Technics Plasma Gmbh Verfahren und vorrichtung zur kunststoffbeschichtung von strangprofilen
JP2993675B2 (ja) * 1989-02-08 1999-12-20 株式会社日立製作所 プラズマ処理方法及びその装置
US5122251A (en) * 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5061838A (en) * 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5032202A (en) * 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
JP2581255B2 (ja) * 1990-04-02 1997-02-12 富士電機株式会社 プラズマ処理方法
US5111111A (en) * 1990-09-27 1992-05-05 Consortium For Surface Processing, Inc. Method and apparatus for coupling a microwave source in an electron cyclotron resonance system

Also Published As

Publication number Publication date
KR950000653B1 (ko) 1995-01-27
JP3056772B2 (ja) 2000-06-26
US5266364A (en) 1993-11-30
JPH0499876A (ja) 1992-03-31
DE69125765T2 (de) 1997-10-09
EP0472045B1 (de) 1997-04-23
EP0472045A1 (de) 1992-02-26

Similar Documents

Publication Publication Date Title
DE69125765D1 (de) Methode und Gerät zur Steuerung eines Plasmaverfahrens
DE69411298D1 (de) Verfahren zur Steuerung eines Kraftwerks und Kraftwerk
DE69513877D1 (de) Verfahren und Gerät zur Steuerung und Planung von Bearbeitungsmaschinen
DE69634768T8 (de) Vorrichtung zur Steuerung der Position eines Trägertisches, sowie Trägertischvorrichtung, Belichtungsgerät und Herstellungsverfahren unter Verwendung derselben
DE59208797D1 (de) Verfahren und Vorrichtung zur Steuerung und unabhängigen Überwachung eines sehr kleinen Glasflusses
DE69739563D1 (de) Verfahren und einrichtung zur steuerung eines kommionen
DE69213097D1 (de) Methode und Vorrichtung zur Positionsregelung
DE69016246D1 (de) Verfahren und Gerät zur Steuerung eines Plattengerätes.
DE69220019D1 (de) Verfahren und Vorrichtung zur Steuerung einer Anzeigetafel
DE69630053D1 (de) Verfahren und Vorrichtung zur Steuerung des Flüssigkeitstransfers
DE69208606D1 (de) Verfahren und Vorrichtung zur optischen Überwachung und Steuerung eines Werkstoffadens
DE69432203D1 (de) Methode zur Kontrolle und Evaluierung einer Halbleiterscheibenfabrikation
DE69625852D1 (de) Verfahren und Vorrichtung zum Kontrollieren des Wachsens eines Siliciumkristalles
DE69221582D1 (de) Vorrichtung zur steuerung eines industriellen roboters
DE69529186D1 (de) Methode und vorrichtung zum reparieren eines koksofens
DE59206720D1 (de) Verfahren zur Ansteuerung des Betriebes eines Kochgerätes und Kochgerätssteuerung
DE4394322T1 (de) Methode und Apparat zur Steuerung des Gangwechsels
DE69319004D1 (de) Verfahren und Gerät zur Steuerung eines Magnetlagers
DE69601424D1 (de) Verfahren und Vorrichtung zur Steuerung des Kristallwachstums
DE69132768D1 (de) Verfahren und Vorrichtung zur Steuerung eines Industrieroboters
DE59209422D1 (de) Verfahren und Vorrichtung zur Steuerung eines Back-/Bratvorgangs
DE69107010D1 (de) Methode und Vorrichtung zur Mengenregelung eines Kompressors.
DE3872761D1 (de) Verfahren und vorrichtung zur steuerung eines stufenlos regelbaren getriebes.
DE69411994D1 (de) Verfahren und Vorrichtung zur Steuerung eines Filmantriebs
DE69321335D1 (de) Vorrichtung zur Überwachung und Steuerung eines Ionenimplantationsgeräts

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee