DE69306316D1 - Supraleitendes Bauelement des Feld-Effekt-Typs - Google Patents

Supraleitendes Bauelement des Feld-Effekt-Typs

Info

Publication number
DE69306316D1
DE69306316D1 DE69306316T DE69306316T DE69306316D1 DE 69306316 D1 DE69306316 D1 DE 69306316D1 DE 69306316 T DE69306316 T DE 69306316T DE 69306316 T DE69306316 T DE 69306316T DE 69306316 D1 DE69306316 D1 DE 69306316D1
Authority
DE
Germany
Prior art keywords
field
effect type
superconducting device
superconducting
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69306316T
Other languages
English (en)
Other versions
DE69306316T2 (de
Inventor
Koichi Mizuno
Hideaki Adachi
Yo Ichikawa
Kentaro Setsune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17050792A external-priority patent/JP3212141B2/ja
Priority claimed from JP4170508A external-priority patent/JP3069195B2/ja
Priority claimed from JP4321583A external-priority patent/JPH06169112A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69306316D1 publication Critical patent/DE69306316D1/de
Publication of DE69306316T2 publication Critical patent/DE69306316T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
DE69306316T 1992-06-29 1993-06-29 Supraleitendes Bauelement des Feld-Effekt-Typs Expired - Fee Related DE69306316T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP17050792A JP3212141B2 (ja) 1992-06-29 1992-06-29 超伝導素子
JP4170508A JP3069195B2 (ja) 1992-06-29 1992-06-29 ジョセフソン素子
JP4321583A JPH06169112A (ja) 1992-12-01 1992-12-01 超伝導素子およびその製造方法

Publications (2)

Publication Number Publication Date
DE69306316D1 true DE69306316D1 (de) 1997-01-16
DE69306316T2 DE69306316T2 (de) 1997-04-03

Family

ID=27323346

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69328567T Expired - Fee Related DE69328567T2 (de) 1992-06-29 1993-06-29 Supraleitendes Bauelement des Feld-Effekt-Typs
DE69306316T Expired - Fee Related DE69306316T2 (de) 1992-06-29 1993-06-29 Supraleitendes Bauelement des Feld-Effekt-Typs

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69328567T Expired - Fee Related DE69328567T2 (de) 1992-06-29 1993-06-29 Supraleitendes Bauelement des Feld-Effekt-Typs

Country Status (3)

Country Link
US (1) US5828079A (de)
EP (2) EP0701292B1 (de)
DE (2) DE69328567T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0790655B1 (de) * 1995-09-29 1999-04-14 Sumitomo Electric Industries, Limited Supraleitende Feldeffektanordnung mit supraleitendem Kanal und Verfahren zur Herstellung
US6587738B1 (en) * 1999-12-30 2003-07-01 Ge-Harris Railway Electronics, L.L.C. Optimal locomotive assignment for a railroad network
FR2835353A1 (fr) * 2002-01-25 2003-08-01 Wintici Dispositifs electroniques de commande a base de materiau supraconducteur
WO2005008723A2 (en) * 2003-07-08 2005-01-27 The Regents Of The University Of California Quantum coherent switch utilizing density wave (dw) material
JP4249684B2 (ja) * 2004-10-06 2009-04-02 株式会社東芝 半導体記憶装置
CN101017848B (zh) * 2006-02-06 2010-08-11 中芯国际集成电路制造(上海)有限公司 分离的双栅场效应晶体管
CN101017783B (zh) 2006-02-06 2013-06-19 中芯国际集成电路制造(上海)有限公司 制造分离的双栅场效应晶体管的方法
CN111755587B (zh) * 2019-03-26 2022-06-21 中国科学院上海微系统与信息技术研究所 场效应超导纳米桥结及其结构和制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846198B2 (ja) * 1980-07-25 1983-10-14 日本電信電話株式会社 酸化物超伝導体ジョセフソン素子の製造方法
JPS63283177A (ja) * 1987-05-15 1988-11-21 Toshiba Corp 超伝導トランジスタ
JP2585269B2 (ja) * 1987-05-15 1997-02-26 株式会社東芝 超伝導トランジスタ
JPS6424476A (en) * 1987-07-20 1989-01-26 Sharp Kk Superconducting device
NL8703119A (nl) * 1987-12-23 1989-07-17 Philips Nv Element voor toepassing in een elektrische schakeling.
DE3876228T2 (de) * 1988-01-15 1993-06-03 Ibm Feldeffektanordnung mit supraleitendem kanal.
JPH01205578A (ja) * 1988-02-12 1989-08-17 Mitsubishi Electric Corp 超伝導電界効果トランジスタ
JP2862137B2 (ja) * 1988-08-11 1999-02-24 古河電気工業株式会社 超電導トランジスタ
KR900008705A (ko) * 1988-11-28 1990-06-04 미다 가쓰시게 초전도 디바이스
JPH02194665A (ja) * 1989-01-24 1990-08-01 Fujitsu Ltd 電界効果型超伝導装置及びその製造方法
JPH02297982A (ja) * 1989-05-12 1990-12-10 Hitachi Ltd 超伝導デバイス
JP2796137B2 (ja) * 1989-09-18 1998-09-10 旭化成工業株式会社 超伝導トランジスタ
US5024993A (en) * 1990-05-02 1991-06-18 Microelectronics & Computer Technology Corporation Superconducting-semiconducting circuits, devices and systems
DE69119022T2 (de) * 1990-10-08 1996-10-31 Sumitomo Electric Industries Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung
CA2054795C (en) * 1990-11-01 1996-08-06 Hiroshi Inada Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
FR2674374A1 (fr) * 1991-03-22 1992-09-25 Bull Sa Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor.

Also Published As

Publication number Publication date
DE69328567D1 (de) 2000-06-08
EP0577074B1 (de) 1996-12-04
EP0701292A2 (de) 1996-03-13
EP0577074A3 (en) 1994-05-11
DE69306316T2 (de) 1997-04-03
EP0577074A2 (de) 1994-01-05
EP0701292B1 (de) 2000-05-03
EP0701292A3 (de) 1997-03-26
US5828079A (en) 1998-10-27
DE69328567T2 (de) 2000-08-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee