DE69209145D1 - Verfahren zur Herstellung einer Dünnfilmisolationsschicht mit Bi-W-Sauerstoff - Google Patents
Verfahren zur Herstellung einer Dünnfilmisolationsschicht mit Bi-W-SauerstoffInfo
- Publication number
- DE69209145D1 DE69209145D1 DE69209145T DE69209145T DE69209145D1 DE 69209145 D1 DE69209145 D1 DE 69209145D1 DE 69209145 T DE69209145 T DE 69209145T DE 69209145 T DE69209145 T DE 69209145T DE 69209145 D1 DE69209145 D1 DE 69209145D1
- Authority
- DE
- Germany
- Prior art keywords
- oxygen
- producing
- thin film
- insulation layer
- film insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title 1
- 238000009413 insulation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052760 oxygen Inorganic materials 0.000 title 1
- 239000001301 oxygen Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
- H10N60/858—Ceramic superconductors comprising copper oxide having multilayered structures, e.g. superlattices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3132736A JPH04362016A (ja) | 1991-06-04 | 1991-06-04 | セラミックス薄膜の製造方法 |
JP3344520A JPH05171414A (ja) | 1991-12-26 | 1991-12-26 | 超伝導薄膜およびその製造方法 |
JP3344519A JPH05170448A (ja) | 1991-12-26 | 1991-12-26 | セラミックス薄膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69209145D1 true DE69209145D1 (de) | 1996-04-25 |
DE69209145T2 DE69209145T2 (de) | 1996-11-21 |
Family
ID=27316570
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69224214T Expired - Fee Related DE69224214T2 (de) | 1991-06-04 | 1992-06-02 | Herstellungsverfahren für Dünnschicht-Supraleiter |
DE69219623T Expired - Fee Related DE69219623T2 (de) | 1991-06-04 | 1992-06-02 | Dünnfilmsupraleiter und Herstellungsmethode |
DE69209145T Expired - Fee Related DE69209145T2 (de) | 1991-06-04 | 1992-06-02 | Verfahren zur Herstellung einer Dünnfilmisolationsschicht mit Bi-W-Sauerstoff |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69224214T Expired - Fee Related DE69224214T2 (de) | 1991-06-04 | 1992-06-02 | Herstellungsverfahren für Dünnschicht-Supraleiter |
DE69219623T Expired - Fee Related DE69219623T2 (de) | 1991-06-04 | 1992-06-02 | Dünnfilmsupraleiter und Herstellungsmethode |
Country Status (2)
Country | Link |
---|---|
EP (3) | EP0640994B1 (de) |
DE (3) | DE69224214T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110646997A (zh) * | 2019-09-29 | 2020-01-03 | 中北大学 | 一种全无机固态电致变色器件及其制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2939530B2 (ja) * | 1996-11-29 | 1999-08-25 | 工業技術院長 | ビスマスを構成元素に含む多元系酸化物薄膜の結晶成長法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1226776B (it) * | 1988-01-12 | 1991-02-07 | Selenia Ind Elettroniche | Miglioramento nei processi di fabbricazione di superconduttori ceramici ad alto valore di suscettivita' magnetica |
JP2664070B2 (ja) * | 1988-08-29 | 1997-10-15 | 住友電気工業株式会社 | 複合酸化物超電導薄膜の作製方法 |
US5047390A (en) * | 1988-10-03 | 1991-09-10 | Matsushita Electric Industrial Co., Ltd. | Josephson devices and process for manufacturing the same |
-
1992
- 1992-06-02 EP EP94116712A patent/EP0640994B1/de not_active Expired - Lifetime
- 1992-06-02 DE DE69224214T patent/DE69224214T2/de not_active Expired - Fee Related
- 1992-06-02 DE DE69219623T patent/DE69219623T2/de not_active Expired - Fee Related
- 1992-06-02 DE DE69209145T patent/DE69209145T2/de not_active Expired - Fee Related
- 1992-06-02 EP EP94116681A patent/EP0643400B1/de not_active Expired - Lifetime
- 1992-06-02 EP EP92109241A patent/EP0517148B1/de not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110646997A (zh) * | 2019-09-29 | 2020-01-03 | 中北大学 | 一种全无机固态电致变色器件及其制备方法 |
CN110646997B (zh) * | 2019-09-29 | 2022-07-08 | 中北大学 | 一种全无机固态电致变色器件及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
DE69219623T2 (de) | 1997-10-23 |
EP0643400B1 (de) | 1998-01-21 |
EP0517148A1 (de) | 1992-12-09 |
EP0640994B1 (de) | 1997-05-07 |
DE69224214T2 (de) | 1998-04-30 |
EP0517148B1 (de) | 1996-03-20 |
DE69219623D1 (de) | 1997-06-12 |
EP0640994A2 (de) | 1995-03-01 |
DE69224214D1 (de) | 1998-02-26 |
EP0640994A3 (de) | 1995-03-15 |
EP0643400A1 (de) | 1995-03-15 |
DE69209145T2 (de) | 1996-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
|
8339 | Ceased/non-payment of the annual fee |