DE69209145T2 - Verfahren zur Herstellung einer Dünnfilmisolationsschicht mit Bi-W-Sauerstoff - Google Patents

Verfahren zur Herstellung einer Dünnfilmisolationsschicht mit Bi-W-Sauerstoff

Info

Publication number
DE69209145T2
DE69209145T2 DE69209145T DE69209145T DE69209145T2 DE 69209145 T2 DE69209145 T2 DE 69209145T2 DE 69209145 T DE69209145 T DE 69209145T DE 69209145 T DE69209145 T DE 69209145T DE 69209145 T2 DE69209145 T2 DE 69209145T2
Authority
DE
Germany
Prior art keywords
oxygen
producing
thin film
insulation layer
film insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69209145T
Other languages
English (en)
Other versions
DE69209145D1 (de
Inventor
Yo Ichikawa
Kentaro Setsune
Hideaki Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3132736A external-priority patent/JPH04362016A/ja
Priority claimed from JP3344520A external-priority patent/JPH05171414A/ja
Priority claimed from JP3344519A external-priority patent/JPH05170448A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69209145D1 publication Critical patent/DE69209145D1/de
Application granted granted Critical
Publication of DE69209145T2 publication Critical patent/DE69209145T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • H10N60/858—Ceramic superconductors comprising copper oxide having multilayered structures, e.g. superlattices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE69209145T 1991-06-04 1992-06-02 Verfahren zur Herstellung einer Dünnfilmisolationsschicht mit Bi-W-Sauerstoff Expired - Fee Related DE69209145T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3132736A JPH04362016A (ja) 1991-06-04 1991-06-04 セラミックス薄膜の製造方法
JP3344520A JPH05171414A (ja) 1991-12-26 1991-12-26 超伝導薄膜およびその製造方法
JP3344519A JPH05170448A (ja) 1991-12-26 1991-12-26 セラミックス薄膜の製造方法

Publications (2)

Publication Number Publication Date
DE69209145D1 DE69209145D1 (de) 1996-04-25
DE69209145T2 true DE69209145T2 (de) 1996-11-21

Family

ID=27316570

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69224214T Expired - Fee Related DE69224214T2 (de) 1991-06-04 1992-06-02 Herstellungsverfahren für Dünnschicht-Supraleiter
DE69219623T Expired - Fee Related DE69219623T2 (de) 1991-06-04 1992-06-02 Dünnfilmsupraleiter und Herstellungsmethode
DE69209145T Expired - Fee Related DE69209145T2 (de) 1991-06-04 1992-06-02 Verfahren zur Herstellung einer Dünnfilmisolationsschicht mit Bi-W-Sauerstoff

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69224214T Expired - Fee Related DE69224214T2 (de) 1991-06-04 1992-06-02 Herstellungsverfahren für Dünnschicht-Supraleiter
DE69219623T Expired - Fee Related DE69219623T2 (de) 1991-06-04 1992-06-02 Dünnfilmsupraleiter und Herstellungsmethode

Country Status (2)

Country Link
EP (3) EP0640994B1 (de)
DE (3) DE69224214T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2939530B2 (ja) * 1996-11-29 1999-08-25 工業技術院長 ビスマスを構成元素に含む多元系酸化物薄膜の結晶成長法
CN110646997B (zh) * 2019-09-29 2022-07-08 中北大学 一种全无机固态电致变色器件及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1226776B (it) * 1988-01-12 1991-02-07 Selenia Ind Elettroniche Miglioramento nei processi di fabbricazione di superconduttori ceramici ad alto valore di suscettivita' magnetica
JP2664070B2 (ja) * 1988-08-29 1997-10-15 住友電気工業株式会社 複合酸化物超電導薄膜の作製方法
US5047390A (en) * 1988-10-03 1991-09-10 Matsushita Electric Industrial Co., Ltd. Josephson devices and process for manufacturing the same

Also Published As

Publication number Publication date
DE69219623T2 (de) 1997-10-23
EP0643400B1 (de) 1998-01-21
EP0517148A1 (de) 1992-12-09
EP0640994B1 (de) 1997-05-07
DE69224214T2 (de) 1998-04-30
EP0517148B1 (de) 1996-03-20
DE69219623D1 (de) 1997-06-12
EP0640994A2 (de) 1995-03-01
DE69224214D1 (de) 1998-02-26
DE69209145D1 (de) 1996-04-25
EP0640994A3 (de) 1995-03-15
EP0643400A1 (de) 1995-03-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8339 Ceased/non-payment of the annual fee