DE69208769T2 - Hochauflösendes lithographisches Verfahren - Google Patents

Hochauflösendes lithographisches Verfahren

Info

Publication number
DE69208769T2
DE69208769T2 DE69208769T DE69208769T DE69208769T2 DE 69208769 T2 DE69208769 T2 DE 69208769T2 DE 69208769 T DE69208769 T DE 69208769T DE 69208769 T DE69208769 T DE 69208769T DE 69208769 T2 DE69208769 T2 DE 69208769T2
Authority
DE
Germany
Prior art keywords
resist
oxygen
thickness
layer
energy source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69208769T
Other languages
German (de)
English (en)
Other versions
DE69208769D1 (de
Inventor
Monte A Douglas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69208769D1 publication Critical patent/DE69208769D1/de
Application granted granted Critical
Publication of DE69208769T2 publication Critical patent/DE69208769T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69208769T 1991-07-31 1992-07-28 Hochauflösendes lithographisches Verfahren Expired - Fee Related DE69208769T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73869991A 1991-07-31 1991-07-31

Publications (2)

Publication Number Publication Date
DE69208769D1 DE69208769D1 (de) 1996-04-11
DE69208769T2 true DE69208769T2 (de) 1996-07-18

Family

ID=24969116

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69208769T Expired - Fee Related DE69208769T2 (de) 1991-07-31 1992-07-28 Hochauflösendes lithographisches Verfahren

Country Status (6)

Country Link
US (1) US5387497A (enExample)
EP (1) EP0525721B1 (enExample)
JP (1) JPH05206005A (enExample)
KR (1) KR100329716B1 (enExample)
DE (1) DE69208769T2 (enExample)
TW (1) TW208089B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100779162B1 (ko) 1999-11-23 2007-11-27 시온 파워 코퍼레이션 전기화학 전지를 위한 리튬 애노드
US9513551B2 (en) 2009-01-29 2016-12-06 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3647447A (en) * 1969-03-03 1972-03-07 Eastman Kodak Co Dyed photoresist compositions
JPS5542890A (en) * 1978-09-22 1980-03-26 Fuji Photo Film Co Ltd Desensitizing solution for lithographic printing
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
JPS61234035A (ja) * 1985-03-29 1986-10-18 Fujitsu Ltd 遠紫外線照射ドライ現像方法
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
NL8700421A (nl) * 1987-02-20 1988-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JPH01284851A (ja) * 1988-05-12 1989-11-16 Rohm Co Ltd フォトレジスト膜形成方法
US5015559A (en) * 1988-07-26 1991-05-14 Matsushita Electric Industrial Co., Ltd. Process for forming a fine resist pattern
US5079131A (en) * 1988-08-29 1992-01-07 Shipley Company Inc. Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
US5094936A (en) * 1988-09-16 1992-03-10 Texas Instruments Incorporated High pressure photoresist silylation process and apparatus
US5015556A (en) * 1990-07-26 1991-05-14 Minnesota Mining And Manufacturing Company Flexographic printing plate process

Also Published As

Publication number Publication date
DE69208769D1 (de) 1996-04-11
EP0525721A1 (en) 1993-02-03
TW208089B (enExample) 1993-06-21
KR100329716B1 (ko) 2002-06-24
JPH05206005A (ja) 1993-08-13
US5387497A (en) 1995-02-07
KR930003288A (ko) 1993-02-24
EP0525721B1 (en) 1996-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee