DE69207503D1 - Einkristall einer Halbleiterverbindung - Google Patents

Einkristall einer Halbleiterverbindung

Info

Publication number
DE69207503D1
DE69207503D1 DE69207503T DE69207503T DE69207503D1 DE 69207503 D1 DE69207503 D1 DE 69207503D1 DE 69207503 T DE69207503 T DE 69207503T DE 69207503 T DE69207503 T DE 69207503T DE 69207503 D1 DE69207503 D1 DE 69207503D1
Authority
DE
Germany
Prior art keywords
single crystal
semiconductor compound
semiconductor
compound
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69207503T
Other languages
English (en)
Other versions
DE69207503T2 (de
Inventor
Tsuneyuki Kaise
Toshio Otaki
Jun Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16629303&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69207503(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69207503D1 publication Critical patent/DE69207503D1/de
Publication of DE69207503T2 publication Critical patent/DE69207503T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69207503T 1991-07-29 1992-07-22 Einkristall einer Halbleiterverbindung Expired - Fee Related DE69207503T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21284691A JP2800954B2 (ja) 1991-07-29 1991-07-29 化合物半導体単結晶

Publications (2)

Publication Number Publication Date
DE69207503D1 true DE69207503D1 (de) 1996-02-22
DE69207503T2 DE69207503T2 (de) 1996-05-15

Family

ID=16629303

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69207503T Expired - Fee Related DE69207503T2 (de) 1991-07-29 1992-07-22 Einkristall einer Halbleiterverbindung

Country Status (4)

Country Link
US (1) US5302839A (de)
EP (1) EP0525619B1 (de)
JP (1) JP2800954B2 (de)
DE (1) DE69207503T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5724062A (en) * 1992-08-05 1998-03-03 Cree Research, Inc. High resolution, high brightness light emitting diode display and method and producing the same
JP2833479B2 (ja) * 1994-06-16 1998-12-09 信越半導体株式会社 液相エピタキシャル成長法ＧａＰ単結晶層中のＳｉ濃度制御方法
US5604135A (en) * 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5812105A (en) * 1996-06-10 1998-09-22 Cree Research, Inc. Led dot matrix drive method and apparatus
US7385574B1 (en) 1995-12-29 2008-06-10 Cree, Inc. True color flat panel display module
JP3992117B2 (ja) * 1996-07-18 2007-10-17 昭和電工株式会社 ＧａＰ発光素子用基板
US7609373B2 (en) 2005-05-31 2009-10-27 Kla-Tencor Technologies Corporation Reducing variations in energy reflected from a sample due to thin film interference
JP2010219320A (ja) 2009-03-17 2010-09-30 Toshiba Corp 発光素子の製造方法及び発光素子
US20160053404A1 (en) * 2013-03-27 2016-02-25 Beijing Tongmei Xtal Technology Co., Ltd. Controllable oxygen concentration in semiconductor substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017880A (en) * 1973-02-12 1977-04-12 Tokyo Shibaura Electric Co., Ltd. Red light emitting gallium phosphide device
JPS5361287A (en) * 1976-11-15 1978-06-01 Toshiba Corp Compound semiconductor light emitting element
JPS5382280A (en) * 1976-12-28 1978-07-20 Toshiba Corp Gallium phosphide emtting device
JPS6028800B2 (ja) 1977-10-17 1985-07-06 住友電気工業株式会社 低欠陥密度りん化ガリウム単結晶
JPS60210599A (ja) 1984-04-03 1985-10-23 Nec Corp 半絶縁性ＧａＡｓ結晶の成長方法
JPH0693522B2 (ja) * 1985-10-09 1994-11-16 信越半導体株式会社 リン化ガリウム緑色発光素子の製造方法
JPH01245569A (ja) * 1988-03-28 1989-09-29 Toshiba Corp ＧａＰ緑色発光素子とその製造方法

Also Published As

Publication number Publication date
JPH0537018A (ja) 1993-02-12
US5302839A (en) 1994-04-12
EP0525619B1 (de) 1996-01-10
EP0525619A1 (de) 1993-02-03
JP2800954B2 (ja) 1998-09-21
DE69207503T2 (de) 1996-05-15

Similar Documents

Publication Publication Date Title
DE68927026D1 (de) Herstellungsverfahren einer Halbleitervorrichtung
DE69309817D1 (de) Herstellungsverfahren einer lichtemittierenden Halbleitervorrichtung
DE69029752D1 (de) Einkapselung einer Halbleiteranordnung
DE69418122D1 (de) Speiseleitungen-Anordnung einer Halbleitervorrichtung
DE69326262T2 (de) Verbindungshalbleiterbauelemente
DE69126115T2 (de) Direkte Entkupplung einer Mikroschaltung
DE69431323T2 (de) Film einer Polymethylpenten/Polypropen Mischung
KR900008069A (ko) 실리콘 단결정의 제조장치
DE69329000D1 (de) Leiterrahmen einer Halbleiteranordnung mit Überchipanschlüssen
FI945085A0 (fi) Yhdistelmä-neu-reseptoristimulaatiotekijä
DE69230194D1 (de) Aussenteil einer Uhr
DE69207503T2 (de) Einkristall einer Halbleiterverbindung
DE69230694T2 (de) Herstellungsverfahren einer Halbleiterlaservorrichtung
DE69126714D1 (de) Teile einer Halbleitervorrichtung
DE69223017D1 (de) Verbindungshalbleiterbauelement
MX9205838A (es) Compuesto fluidificante
DK0601034T3 (da) Fastgørelsesindretninger
IT1255865B (it) Disposizione a semiconduttore
DE69303327D1 (de) Antiferroelektrische Flüssigkristallverbindung
DK150591D0 (da) Kemisk forbindelse
DE69217326T2 (de) Verbindungshalbleiterbauelement
BR9104689A (pt) Composto higienizante
DE9212680U1 (de) Verpackung einer Armbanduhr
NO932967D0 (no) Di- henholdsvis triazindioner
KR930005475U (ko) 테이프 풀림 방지용 기어구조체

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee