DE69206425T2 - Belichtungsvorrichtung mit Strahlen aus geladenen Teilchen zur Verbesserung des Heizzustandes einer Blockmaske. - Google Patents

Belichtungsvorrichtung mit Strahlen aus geladenen Teilchen zur Verbesserung des Heizzustandes einer Blockmaske.

Info

Publication number
DE69206425T2
DE69206425T2 DE69206425T DE69206425T DE69206425T2 DE 69206425 T2 DE69206425 T2 DE 69206425T2 DE 69206425 T DE69206425 T DE 69206425T DE 69206425 T DE69206425 T DE 69206425T DE 69206425 T2 DE69206425 T2 DE 69206425T2
Authority
DE
Germany
Prior art keywords
beams
improve
charged particles
exposure device
heating condition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69206425T
Other languages
English (en)
Other versions
DE69206425D1 (de
Inventor
Akio Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69206425D1 publication Critical patent/DE69206425D1/de
Publication of DE69206425T2 publication Critical patent/DE69206425T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31788—Lithography by projection through mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31794—Problems associated with lithography affecting masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
DE69206425T 1991-01-11 1992-01-06 Belichtungsvorrichtung mit Strahlen aus geladenen Teilchen zur Verbesserung des Heizzustandes einer Blockmaske. Expired - Fee Related DE69206425T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP180491 1991-01-11

Publications (2)

Publication Number Publication Date
DE69206425D1 DE69206425D1 (de) 1996-01-18
DE69206425T2 true DE69206425T2 (de) 1996-05-02

Family

ID=11511764

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69206425T Expired - Fee Related DE69206425T2 (de) 1991-01-11 1992-01-06 Belichtungsvorrichtung mit Strahlen aus geladenen Teilchen zur Verbesserung des Heizzustandes einer Blockmaske.

Country Status (4)

Country Link
US (1) US5177365A (de)
EP (1) EP0494737B1 (de)
KR (1) KR960002282B1 (de)
DE (1) DE69206425T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06124884A (ja) * 1992-10-12 1994-05-06 Mitsubishi Electric Corp 電子線露光装置
US5854490A (en) * 1995-10-03 1998-12-29 Fujitsu Limited Charged-particle-beam exposure device and charged-particle-beam exposure method
JP3683370B2 (ja) * 1997-01-10 2005-08-17 富士通株式会社 電子ビーム露光装置
KR19980079377A (ko) * 1997-03-25 1998-11-25 요시다쇼이치로 하전립자선 전사장치
US6455821B1 (en) 2000-08-17 2002-09-24 Nikon Corporation System and method to control temperature of an article
JP2005183577A (ja) * 2003-12-18 2005-07-07 Sony Corp 露光装置、露光方法、および半導体装置の製造方法
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213053A (en) * 1978-11-13 1980-07-15 International Business Machines Corporation Electron beam system with character projection capability
JPS6180744A (ja) * 1984-09-27 1986-04-24 Hitachi Ltd イオンマイクロビ−ム装置
US4687940A (en) * 1986-03-20 1987-08-18 Hughes Aircraft Company Hybrid focused-flood ion beam system and method
JPH01102930A (ja) * 1987-10-16 1989-04-20 Hitachi Ltd 電子線描画装置
DE68920281T2 (de) * 1988-10-31 1995-05-11 Fujitsu Ltd Vorrichtung und Verfahren zur Lithographie mittels eines Strahls geladener Teilchen.

Also Published As

Publication number Publication date
EP0494737A2 (de) 1992-07-15
EP0494737A3 (en) 1993-08-11
EP0494737B1 (de) 1995-12-06
US5177365A (en) 1993-01-05
KR960002282B1 (ko) 1996-02-14
KR920015463A (ko) 1992-08-26
DE69206425D1 (de) 1996-01-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee