DE69205640D1 - Verfahren zur Herstellung eines Mikroelektronisches Bauelement. - Google Patents

Verfahren zur Herstellung eines Mikroelektronisches Bauelement.

Info

Publication number
DE69205640D1
DE69205640D1 DE69205640T DE69205640T DE69205640D1 DE 69205640 D1 DE69205640 D1 DE 69205640D1 DE 69205640 T DE69205640 T DE 69205640T DE 69205640 T DE69205640 T DE 69205640T DE 69205640 D1 DE69205640 D1 DE 69205640D1
Authority
DE
Germany
Prior art keywords
production
microelectronic component
microelectronic
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69205640T
Other languages
English (en)
Other versions
DE69205640T2 (de
Inventor
R Mark Boysel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69205640D1 publication Critical patent/DE69205640D1/de
Application granted granted Critical
Publication of DE69205640T2 publication Critical patent/DE69205640T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
DE69205640T 1991-08-01 1992-07-30 Verfahren zur Herstellung eines Mikroelektronisches Bauelement. Expired - Fee Related DE69205640T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73926891A 1991-08-01 1991-08-01

Publications (2)

Publication Number Publication Date
DE69205640D1 true DE69205640D1 (de) 1995-11-30
DE69205640T2 DE69205640T2 (de) 1996-04-04

Family

ID=24971541

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69205640T Expired - Fee Related DE69205640T2 (de) 1991-08-01 1992-07-30 Verfahren zur Herstellung eines Mikroelektronisches Bauelement.

Country Status (5)

Country Link
US (2) US5349217A (de)
EP (1) EP0525763B1 (de)
JP (1) JP3323239B2 (de)
KR (1) KR100235159B1 (de)
DE (1) DE69205640T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69027611T2 (de) * 1990-07-18 1997-01-23 Ibm Herstellungsverfahren und struktur einer integrierten vakuum-mikroelektronischen vorrichtung
US5453154A (en) * 1991-10-21 1995-09-26 National Semiconductor Corporation Method of making an integrated circuit microwave interconnect and components
US5598052A (en) * 1992-07-28 1997-01-28 Philips Electronics North America Vacuum microelectronic device and methodology for fabricating same
US5954560A (en) * 1993-06-02 1999-09-21 Spectron Corporation Of America, L.L.C. Method for making a gas discharge flat-panel display
US5469021A (en) * 1993-06-02 1995-11-21 Btl Fellows Company, Llc Gas discharge flat-panel display and method for making the same
US5841219A (en) * 1993-09-22 1998-11-24 University Of Utah Research Foundation Microminiature thermionic vacuum tube
JP3388870B2 (ja) * 1994-03-15 2003-03-24 株式会社東芝 微小３極真空管およびその製造方法
US5504385A (en) * 1994-08-31 1996-04-02 At&T Corp. Spaced-gate emission device and method for making same
US5714837A (en) * 1994-12-09 1998-02-03 Zurn; Shayne Matthew Vertical field emission devices and methods of fabrication with applications to flat panel displays
US5683282A (en) * 1995-12-04 1997-11-04 Industrial Technology Research Institute Method for manufacturing flat cold cathode arrays
US5797780A (en) * 1996-02-23 1998-08-25 Industrial Technology Research Institute Hybrid tubeless sealing process for flat panel displays
DE19609234A1 (de) * 1996-03-09 1997-09-11 Deutsche Telekom Ag Röhrensysteme und Herstellungsverfahren hierzu
US5681198A (en) * 1996-10-15 1997-10-28 Industrial Technology Research Institute Vacuum seal method for cathode ray tubes
US5955828A (en) * 1996-10-16 1999-09-21 University Of Utah Research Foundation Thermionic optical emission device
JPH10124182A (ja) 1996-10-24 1998-05-15 Fujitsu Ltd 増設バッテリを装着可能な携帯型コンピュータ装置
JP3195547B2 (ja) * 1996-11-11 2001-08-06 松下電器産業株式会社 真空封止電界放出型電子源装置及びその製造方法
US5777432A (en) * 1997-04-07 1998-07-07 Motorola Inc. High breakdown field emission device with tapered cylindrical spacers
DE19736754B4 (de) 1997-08-23 2004-09-30 Micronas Semiconductor Holding Ag Integriertes Gasentladungsbauelement zum Überspannungsschutz
US6004830A (en) * 1998-02-09 1999-12-21 Advanced Vision Technologies, Inc. Fabrication process for confined electron field emission device
US6626720B1 (en) 2000-09-07 2003-09-30 Motorola, Inc. Method of manufacturing vacuum gap dielectric field emission triode and apparatus
US6884093B2 (en) * 2000-10-03 2005-04-26 The Trustees Of Princeton University Organic triodes with novel grid structures and method of production
US7005783B2 (en) 2002-02-04 2006-02-28 Innosys, Inc. Solid state vacuum devices and method for making the same
US6995502B2 (en) 2002-02-04 2006-02-07 Innosys, Inc. Solid state vacuum devices and method for making the same
US20050016575A1 (en) * 2003-06-13 2005-01-27 Nalin Kumar Field emission based thermoelectric device
US9245671B2 (en) 2012-03-14 2016-01-26 Ut-Battelle, Llc Electrically isolated, high melting point, metal wire arrays and method of making same
US20210082715A1 (en) * 2018-01-05 2021-03-18 University Of Maryland, College Park Multi-layer solid-state devices and methods for forming the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8720792D0 (en) * 1987-09-04 1987-10-14 Gen Electric Co Plc Vacuum devices
FR2634059B1 (fr) * 1988-07-08 1996-04-12 Thomson Csf Microcomposant electronique autoscelle sous vide, notamment diode, ou triode, et procede de fabrication correspondant
US4943343A (en) * 1989-08-14 1990-07-24 Zaher Bardai Self-aligned gate process for fabricating field emitter arrays
US5012153A (en) * 1989-12-22 1991-04-30 Atkinson Gary M Split collector vacuum field effect transistor
US5077597A (en) * 1990-08-17 1991-12-31 North Carolina State University Microelectronic electron emitter
US5136205A (en) * 1991-03-26 1992-08-04 Hughes Aircraft Company Microelectronic field emission device with air bridge anode
JPH065200A (ja) * 1992-06-17 1994-01-14 Yokogawa Electric Corp 平面型電界放出デバイスの製造方法

Also Published As

Publication number Publication date
KR100235159B1 (ko) 1999-12-15
KR930005172A (ko) 1993-03-23
US5411426A (en) 1995-05-02
EP0525763A1 (de) 1993-02-03
US5349217A (en) 1994-09-20
JPH05205644A (ja) 1993-08-13
JP3323239B2 (ja) 2002-09-09
EP0525763B1 (de) 1995-10-25
DE69205640T2 (de) 1996-04-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee