DE69132444D1 - Röntgenstrahlmaskenstruktur, Verfahren zur Herstellung und zur Röntgenstrahlbelichtung - Google Patents

Röntgenstrahlmaskenstruktur, Verfahren zur Herstellung und zur Röntgenstrahlbelichtung

Info

Publication number
DE69132444D1
DE69132444D1 DE69132444T DE69132444T DE69132444D1 DE 69132444 D1 DE69132444 D1 DE 69132444D1 DE 69132444 T DE69132444 T DE 69132444T DE 69132444 T DE69132444 T DE 69132444T DE 69132444 D1 DE69132444 D1 DE 69132444D1
Authority
DE
Germany
Prior art keywords
ray
manufacturing
mask structure
exposure
ray exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132444T
Other languages
English (en)
Other versions
DE69132444T2 (de
Inventor
Yasuaki Fukuda
Shigeyuki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18679590A external-priority patent/JP2791196B2/ja
Priority claimed from JP19974690A external-priority patent/JP2801377B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69132444D1 publication Critical patent/DE69132444D1/de
Application granted granted Critical
Publication of DE69132444T2 publication Critical patent/DE69132444T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69132444T 1990-07-12 1991-07-12 Röntgenstrahlmaskenstruktur, Verfahren zur Herstellung und zur Röntgenstrahlbelichtung Expired - Fee Related DE69132444T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18679590A JP2791196B2 (ja) 1990-07-12 1990-07-12 Ｘ線マスク構造体とその製造方法及びｘ線露光方法
JP19974690A JP2801377B2 (ja) 1990-07-27 1990-07-27 Ｘ線マスク構造体の製造方法

Publications (2)

Publication Number Publication Date
DE69132444D1 true DE69132444D1 (de) 2000-11-16
DE69132444T2 DE69132444T2 (de) 2001-03-08

Family

ID=26503980

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132444T Expired - Fee Related DE69132444T2 (de) 1990-07-12 1991-07-12 Röntgenstrahlmaskenstruktur, Verfahren zur Herstellung und zur Röntgenstrahlbelichtung

Country Status (3)

Country Link
US (1) US5751780A (de)
EP (1) EP0466189B1 (de)
DE (1) DE69132444T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087005A (en) * 1993-10-22 2000-07-11 The United States Of America As Represented By The Secretary Of The Navy Adhesion of silicon oxide to diamond
JP2000082666A (ja) * 1998-07-09 2000-03-21 Canon Inc Ｘ線マスク構造体、ｘ線露光装置、該ｘ線露光装置を用いたｘ線露光方法、ｘ線マスク構造体または該ｘ線露光装置を用いて作製された半導体デバイス及び該半導体デバイスの製造方法
US6365326B1 (en) 1999-05-07 2002-04-02 International Business Machines Corporation Pattern density tailoring for etching of advanced lithographic mask
US6477225B1 (en) * 2000-08-09 2002-11-05 Sandia National Laboratories X-ray mask and method for providing same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3170974D1 (en) * 1981-02-16 1985-07-25 Ibm Method for increasing the resistance of a solid material surface against etching
US4515876A (en) * 1982-07-17 1985-05-07 Nippon Telegraph & Telephone Public Corp. X-Ray lithography mask and method for fabricating the same
JPS62147730A (ja) * 1985-12-20 1987-07-01 Mitsubishi Electric Corp Ｘ線露光用マスクおよびその製造方法
CA1313792C (en) * 1986-02-28 1993-02-23 Junji Hirokane Method of manufacturing photo-mask and photo-mask manufactured thereby
IT1191569B (it) * 1986-02-28 1988-03-23 Nuova Sil Spa Stampo per la produzione mediante colata di lenti organiche
US4728591A (en) * 1986-03-07 1988-03-01 Trustees Of Boston University Self-assembled nanometer lithographic masks and templates and method for parallel fabrication of nanometer scale multi-device structures
JPS63317676A (ja) * 1987-06-19 1988-12-26 Sharp Corp 無粒構造金属化合物薄膜の製造方法

Also Published As

Publication number Publication date
US5751780A (en) 1998-05-12
EP0466189B1 (de) 2000-10-11
EP0466189A3 (en) 1993-03-17
DE69132444T2 (de) 2001-03-08
EP0466189A2 (de) 1992-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee