DE69131068D1 - Verbindungsverfahren und Anordnung zur elektrischen Verbindung kleiner Teile - Google Patents

Verbindungsverfahren und Anordnung zur elektrischen Verbindung kleiner Teile

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Publication number
DE69131068D1
DE69131068D1 DE69131068T DE69131068T DE69131068D1 DE 69131068 D1 DE69131068 D1 DE 69131068D1 DE 69131068 T DE69131068 T DE 69131068T DE 69131068 T DE69131068 T DE 69131068T DE 69131068 D1 DE69131068 D1 DE 69131068D1
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DE
Germany
Prior art keywords
arrangement
small parts
connection
electrical connection
connection method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69131068T
Other languages
English (en)
Other versions
DE69131068T2 (de
Inventor
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69131068D1 publication Critical patent/DE69131068D1/de
Publication of DE69131068T2 publication Critical patent/DE69131068T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10636Leadless chip, e.g. chip capacitor or resistor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04Soldering or other types of metallurgic bonding
    • H05K2203/0425Solder powder or solder coated metal powder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14Related to the order of processing steps
    • H05K2203/1461Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/102Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
DE69131068T 1991-01-09 1991-12-31 Verbindungsverfahren und Anordnung zur elektrischen Verbindung kleiner Teile Expired - Fee Related DE69131068T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3062764A JPH07114218B2 (ja) 1991-01-09 1991-01-09 微小箇所の電気接続方法及び該方法により形成された半導体装置

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DE69131068T2 DE69131068T2 (de) 1999-08-19

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US (3) US5328078A (de)
EP (1) EP0494463B1 (de)
JP (1) JPH07114218B2 (de)
KR (1) KR970011666B1 (de)
DE (1) DE69131068T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529634A (en) * 1992-12-28 1996-06-25 Kabushiki Kaisha Toshiba Apparatus and method of manufacturing semiconductor device
WO1995032449A1 (fr) * 1994-05-20 1995-11-30 Seiko Epson Corporation Structure de portions conductrices de connexion, et affichage a cristaux liquides et imprimante electronique pourvus d'une telle structure
JP3587884B2 (ja) * 1994-07-21 2004-11-10 富士通株式会社 多層回路基板の製造方法
US5587029A (en) * 1994-10-27 1996-12-24 Reynolds Metals Company Machineable aluminum alloys containing In and Sn and process for producing the same
JP3455626B2 (ja) * 1996-03-13 2003-10-14 株式会社東芝 半導体装置の製造方法および製造装置
US5725694A (en) * 1996-11-25 1998-03-10 Reynolds Metals Company Free-machining aluminum alloy and method of use
US5921461A (en) * 1997-06-11 1999-07-13 Raytheon Company Vacuum package having vacuum-deposited local getter and its preparation
TW476073B (en) * 1999-12-09 2002-02-11 Ebara Corp Solution containing metal component, method of and apparatus for forming thin metal film
US6743395B2 (en) * 2000-03-22 2004-06-01 Ebara Corporation Composite metallic ultrafine particles and process for producing the same
US6730358B2 (en) 2001-02-22 2004-05-04 Fujitsu Limited Method for depositing conductive paste using stencil
DE10113497A1 (de) * 2001-03-20 2002-06-06 Infineon Technologies Ag Herstellungsverfahren für eine integrierte Schaltung
JP4069867B2 (ja) * 2004-01-05 2008-04-02 セイコーエプソン株式会社 部材の接合方法
TWI239574B (en) * 2004-03-18 2005-09-11 Ind Tech Res Inst The method of conductive particles dispersing
US8405220B1 (en) 2005-03-23 2013-03-26 Marvell International Ltd. Structures, architectures, systems, methods, algorithms and software for configuring an integrated circuit for multiple packaging types
US7586199B1 (en) 2005-03-23 2009-09-08 Marvell International Ltd. Structures, architectures, systems, methods, algorithms and software for configuring and integrated circuit for multiple packaging types
US7767574B2 (en) * 2006-03-30 2010-08-03 Kabushiki Kaisha Mikuni Kogyo Method of forming micro metal bump
US20190368033A1 (en) * 2018-06-05 2019-12-05 United Technologies Corporation Selective vapor deposition process for additive manufacturing

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3116549A (en) * 1959-02-14 1964-01-07 Phoenix Rheinrohr Ag Process for the production of clad products
US3716347A (en) * 1970-09-21 1973-02-13 Minnesota Mining & Mfg Metal parts joined with sintered powdered metal
JPS542066B2 (de) * 1974-03-25 1979-02-01
CA1138795A (en) * 1980-02-19 1983-01-04 Goodrich (B.F.) Company (The) Escape slide and life raft
US4320438A (en) * 1980-05-15 1982-03-16 Cts Corporation Multi-layer ceramic package
US4423468A (en) * 1980-10-01 1983-12-27 Motorola, Inc. Dual electronic component assembly
US4376740A (en) * 1981-01-05 1983-03-15 National Research Institute For Metals Process for production fine metal particles
DE3304672C3 (de) * 1983-02-11 1993-12-02 Ant Nachrichtentech Verfahren zur Kontaktierung von Körpern und seine Anwendung
JPS59208006A (ja) * 1983-05-10 1984-11-26 Toyota Motor Corp 合金微粉末の製造方法
JPS59208004A (ja) * 1983-05-10 1984-11-26 Toyota Motor Corp 金属微粉末の製造方法
FR2550009B1 (fr) * 1983-07-29 1986-01-24 Inf Milit Spatiale Aeronaut Boitier de composant electronique muni d'un condensateur
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4541035A (en) * 1984-07-30 1985-09-10 General Electric Company Low loss, multilevel silicon circuit board
DE3501410A1 (de) * 1985-01-17 1986-07-17 Linde Ag, 6200 Wiesbaden Verfahren zum auftragen von lot
US4635093A (en) * 1985-06-03 1987-01-06 General Electric Company Electrical connection
JPS6224855A (ja) * 1985-07-25 1987-02-02 Hitachi Ltd 接合方法
JPH0815153B2 (ja) * 1986-06-30 1996-02-14 カシオ計算機株式会社 半導体素子の突起電極形成方法
JPS63152136A (ja) * 1986-12-17 1988-06-24 Fuji Electric Co Ltd 半導体チツプの実装方法
US4791075A (en) * 1987-10-05 1988-12-13 Motorola, Inc. Process for making a hermetic low cost pin grid array package
US5041901A (en) * 1989-05-10 1991-08-20 Hitachi, Ltd. Lead frame and semiconductor device using the same
US5076485A (en) * 1990-04-24 1991-12-31 Microelectronics And Computer Technology Corporation Bonding electrical leads to pads with particles
JPH0616285A (ja) * 1992-07-01 1994-01-25 Nikon Corp 基板位置ずれ検出装置

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US5980636A (en) 1999-11-09
KR920015523A (ko) 1992-08-27
US5328078A (en) 1994-07-12
EP0494463A2 (de) 1992-07-15
EP0494463A3 (en) 1992-11-25
DE69131068T2 (de) 1999-08-19
EP0494463B1 (de) 1999-03-31
JPH07114218B2 (ja) 1995-12-06
KR970011666B1 (ko) 1997-07-14
JPH04251945A (ja) 1992-09-08
US6331681B1 (en) 2001-12-18

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