DE69131032T2 - Verfahren zum Herstellen einer EPROM-Zelle mit geteiltem Gate und mit Polysilizium-Abstandhaltern - Google Patents
Verfahren zum Herstellen einer EPROM-Zelle mit geteiltem Gate und mit Polysilizium-AbstandhalternInfo
- Publication number
- DE69131032T2 DE69131032T2 DE69131032T DE69131032T DE69131032T2 DE 69131032 T2 DE69131032 T2 DE 69131032T2 DE 69131032 T DE69131032 T DE 69131032T DE 69131032 T DE69131032 T DE 69131032T DE 69131032 T2 DE69131032 T2 DE 69131032T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- split gate
- eprom cell
- polysilicon spacers
- gate eprom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
- 125000006850 spacer group Chemical group 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54539790A | 1990-06-28 | 1990-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69131032D1 DE69131032D1 (de) | 1999-04-29 |
DE69131032T2 true DE69131032T2 (de) | 1999-10-21 |
Family
ID=24176053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69131032T Expired - Fee Related DE69131032T2 (de) | 1990-06-28 | 1991-06-14 | Verfahren zum Herstellen einer EPROM-Zelle mit geteiltem Gate und mit Polysilizium-Abstandhaltern |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0463511B1 (de) |
JP (1) | JP3086282B2 (de) |
KR (1) | KR100236009B1 (de) |
DE (1) | DE69131032T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0151621B1 (ko) * | 1994-11-05 | 1998-10-01 | 문정환 | 비휘발성 메모리 반도체 소자 및 이의 제조방법 |
US5880499A (en) * | 1994-11-11 | 1999-03-09 | Nec Corporation | Memory cell of a nonvolatile semiconductor device |
JP2601226B2 (ja) * | 1994-11-11 | 1997-04-16 | 日本電気株式会社 | 不揮発性半導体記憶装置のメモリセルの形成方法 |
US5900657A (en) * | 1997-05-19 | 1999-05-04 | National Semiconductor Corp. | MOS switch that reduces clock feed through in a switched capacitor circuit |
KR100554833B1 (ko) * | 1999-10-11 | 2006-02-22 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그의 제조방법 |
CN1309426A (zh) * | 1999-11-12 | 2001-08-22 | 密克罗奇普技术公司 | 用于独立阀值电压控制的存储单元和选择栅的装置及方法 |
JP4488565B2 (ja) * | 1999-12-03 | 2010-06-23 | 富士通株式会社 | 半導体記憶装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639893A (en) * | 1984-05-15 | 1987-01-27 | Wafer Scale Integration, Inc. | Self-aligned split gate EPROM |
JPS61136274A (ja) * | 1984-12-07 | 1986-06-24 | Toshiba Corp | 半導体装置 |
US4794565A (en) * | 1986-09-15 | 1988-12-27 | The Regents Of The University Of California | Electrically programmable memory device employing source side injection |
JPH01248670A (ja) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | 不揮発性半導体記憶装置ならびにその動作方法および製造方法 |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
-
1991
- 1991-06-14 EP EP91109796A patent/EP0463511B1/de not_active Expired - Lifetime
- 1991-06-14 DE DE69131032T patent/DE69131032T2/de not_active Expired - Fee Related
- 1991-06-26 JP JP03154328A patent/JP3086282B2/ja not_active Expired - Lifetime
- 1991-06-27 KR KR1019910010781A patent/KR100236009B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100236009B1 (ko) | 1999-12-15 |
EP0463511A2 (de) | 1992-01-02 |
JPH04233278A (ja) | 1992-08-21 |
EP0463511A3 (en) | 1993-04-07 |
EP0463511B1 (de) | 1999-03-24 |
DE69131032D1 (de) | 1999-04-29 |
JP3086282B2 (ja) | 2000-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee | ||
8370 | Indication of lapse of patent is to be deleted | ||
8339 | Ceased/non-payment of the annual fee |