DE69129930T2 - Verfahren zur Herstellung der Elektrodenmetallisierung von einem Transistor - Google Patents
Verfahren zur Herstellung der Elektrodenmetallisierung von einem TransistorInfo
- Publication number
- DE69129930T2 DE69129930T2 DE69129930T DE69129930T DE69129930T2 DE 69129930 T2 DE69129930 T2 DE 69129930T2 DE 69129930 T DE69129930 T DE 69129930T DE 69129930 T DE69129930 T DE 69129930T DE 69129930 T2 DE69129930 T2 DE 69129930T2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- producing
- electrode metallization
- metallization
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001465 metallisation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9012442A FR2667724B1 (fr) | 1990-10-09 | 1990-10-09 | Procede de realisation des metallisations d'electrodes d'un transistor. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69129930D1 DE69129930D1 (de) | 1998-09-10 |
DE69129930T2 true DE69129930T2 (de) | 1998-12-17 |
Family
ID=9401061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69129930T Expired - Lifetime DE69129930T2 (de) | 1990-10-09 | 1991-10-04 | Verfahren zur Herstellung der Elektrodenmetallisierung von einem Transistor |
Country Status (5)
Country | Link |
---|---|
US (1) | US5194403A (de) |
EP (1) | EP0480803B1 (de) |
JP (1) | JPH0629305A (de) |
DE (1) | DE69129930T2 (de) |
FR (1) | FR2667724B1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132303A (ja) * | 1991-11-29 | 1994-05-13 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタおよびその作製方法 |
FR2697945B1 (fr) * | 1992-11-06 | 1995-01-06 | Thomson Csf | Procédé de gravure d'une hétérostructure de matériaux du groupe III-V. |
US5330932A (en) * | 1992-12-31 | 1994-07-19 | Texas Instruments Incorporated | Method for fabricating GaInP/GaAs structures |
US5773334A (en) * | 1994-09-26 | 1998-06-30 | Toyota Jidosha Kabushiki Kaisha | Method of manufacturing a semiconductor device |
FR2727570B1 (fr) * | 1994-11-25 | 1997-01-24 | Thomson Csf | Amplificateur hyperfrequence monolithique haute integration, a topologie distribuee arborescente |
FR2736468B1 (fr) * | 1995-07-07 | 1997-08-14 | Thomson Csf | Transistor bipolaire a structure optimisee |
FR2737342B1 (fr) * | 1995-07-25 | 1997-08-22 | Thomson Csf | Composant semiconducteur avec dissipateur thermique integre |
KR19980064250A (ko) * | 1996-12-18 | 1998-10-07 | 윌리엄비.켐플러 | 다중 레벨 금속화를 위한 완전히 인캡슐레이팅된 금속 리드 |
FR2764118B1 (fr) * | 1997-05-30 | 2000-08-04 | Thomson Csf | Transistor bipolaire stabilise avec elements isolants electriques |
FR2792082B1 (fr) | 1999-04-06 | 2003-05-30 | Thomson Csf | Dispositif d'holographie numerique |
FR2793953B1 (fr) | 1999-05-21 | 2002-08-09 | Thomson Csf | Capacite thermique pour composant electronique fonctionnant en impulsions longues |
FR2803102B1 (fr) | 1999-12-23 | 2002-03-22 | Thomson Csf | Transistor bipolaire a heterojonction a collecteur en haut et procede de realisation |
DE10225525A1 (de) * | 2002-06-10 | 2003-12-18 | United Monolithic Semiconduct | Verfahren zur Herstellung eines Hetero-Bipolar-Transistors und Hetero-Bipolar-Transistor |
US7081415B2 (en) * | 2004-02-18 | 2006-07-25 | Northrop Grumman Corporation | Method of dry plasma etching semiconductor materials |
US7692223B2 (en) | 2006-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
US8610285B2 (en) | 2011-05-30 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D IC packaging structures and methods with a metal pillar |
US8664760B2 (en) * | 2011-05-30 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Connector design for packaging integrated circuits |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3801391A (en) * | 1972-09-25 | 1974-04-02 | Bell Telephone Labor Inc | Method for selectively etching alxga1-xas multiplier structures |
NL7505134A (nl) * | 1975-05-01 | 1976-11-03 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting. |
JPS631066A (ja) * | 1986-06-19 | 1988-01-06 | Fujitsu Ltd | 半導体装置の製造方法 |
US4829347A (en) * | 1987-02-06 | 1989-05-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Process for making indium gallium arsenide devices |
JPS63276267A (ja) * | 1987-05-08 | 1988-11-14 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2526626B2 (ja) * | 1988-03-14 | 1996-08-21 | 日本電気株式会社 | ヘテロ接合バイポ―ラ・トランジスタおよびその製造方法 |
JPH01241867A (ja) * | 1988-03-23 | 1989-09-26 | Mitsubishi Electric Corp | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
US4954457A (en) * | 1988-10-31 | 1990-09-04 | International Business Machines Corporation | Method of making heterojunction bipolar transistors |
US4935797A (en) * | 1988-10-31 | 1990-06-19 | International Business Machines Corporation | Heterojunction bipolar transistors |
US5097312A (en) * | 1989-02-16 | 1992-03-17 | Texas Instruments Incorporated | Heterojunction bipolar transistor and integration of same with field effect device |
-
1990
- 1990-10-09 FR FR9012442A patent/FR2667724B1/fr not_active Expired - Lifetime
-
1991
- 1991-10-02 US US07/769,837 patent/US5194403A/en not_active Expired - Lifetime
- 1991-10-04 DE DE69129930T patent/DE69129930T2/de not_active Expired - Lifetime
- 1991-10-04 EP EP91402651A patent/EP0480803B1/de not_active Expired - Lifetime
- 1991-10-08 JP JP3260157A patent/JPH0629305A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5194403A (en) | 1993-03-16 |
EP0480803A1 (de) | 1992-04-15 |
DE69129930D1 (de) | 1998-09-10 |
JPH0629305A (ja) | 1994-02-04 |
FR2667724B1 (fr) | 1992-11-27 |
EP0480803B1 (de) | 1998-08-05 |
FR2667724A1 (fr) | 1992-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |