DE69128757D1 - Direktzugriffspeicheranordnung mit einer aus bipolaren Transistoren ausgeführten Abfühlverstärkerschaltung - Google Patents
Direktzugriffspeicheranordnung mit einer aus bipolaren Transistoren ausgeführten AbfühlverstärkerschaltungInfo
- Publication number
- DE69128757D1 DE69128757D1 DE69128757T DE69128757T DE69128757D1 DE 69128757 D1 DE69128757 D1 DE 69128757D1 DE 69128757 T DE69128757 T DE 69128757T DE 69128757 T DE69128757 T DE 69128757T DE 69128757 D1 DE69128757 D1 DE 69128757D1
- Authority
- DE
- Germany
- Prior art keywords
- random access
- access memory
- amplifier circuit
- sense amplifier
- bipolar transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2264359A JP2616198B2 (ja) | 1990-10-01 | 1990-10-01 | 半導体メモリ回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69128757D1 true DE69128757D1 (de) | 1998-02-26 |
| DE69128757T2 DE69128757T2 (de) | 1998-08-20 |
Family
ID=17402065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69128757T Expired - Fee Related DE69128757T2 (de) | 1990-10-01 | 1991-09-24 | Direktzugriffspeicheranordnung mit einer aus bipolaren Transistoren ausgeführten Abfühlverstärkerschaltung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5282168A (de) |
| EP (1) | EP0479098B1 (de) |
| JP (1) | JP2616198B2 (de) |
| DE (1) | DE69128757T2 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08212787A (ja) * | 1995-02-09 | 1996-08-20 | Nec Corp | 半導体記憶装置 |
| US5528178A (en) * | 1995-03-31 | 1996-06-18 | International Business Machines Corporation | Sense and hold amplifier |
| US5640114A (en) * | 1995-12-27 | 1997-06-17 | Vlsi Technology, Inc. | Versatile select and hold scan flip-flop |
| JP3031298B2 (ja) * | 1997-06-18 | 2000-04-10 | 日本電気株式会社 | 電流検出型センスアンプ |
| EP1858027A1 (de) | 2006-05-19 | 2007-11-21 | STMicroelectronics S.r.l. | Leseanordnung für Halbleiterspeicher |
| CN101807422B (zh) * | 2010-03-26 | 2013-03-20 | 上海宏力半导体制造有限公司 | 读出放大电路 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4604533A (en) * | 1982-12-28 | 1986-08-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Sense amplifier |
| US4553053A (en) * | 1983-10-03 | 1985-11-12 | Honeywell Information Systems Inc. | Sense amplifier |
| US4607172A (en) * | 1984-02-13 | 1986-08-19 | National Semiconductor Corporation | Bipolar strobed transistor latch for a high gain comparator |
| EP0365730B1 (de) * | 1988-10-28 | 1994-08-03 | International Business Machines Corporation | Doppelstufiger bipolarer Abtastverstärker für BICMOS SRAMS mit einem "common base"-Verstärker in der Endstufe |
| US4991141A (en) * | 1990-02-08 | 1991-02-05 | Texas Instruments Incorporated | Sense amplifier and method for sensing the outputs of static random access memory cells |
-
1990
- 1990-10-01 JP JP2264359A patent/JP2616198B2/ja not_active Expired - Fee Related
-
1991
- 1991-09-24 EP EP91116259A patent/EP0479098B1/de not_active Expired - Lifetime
- 1991-09-24 DE DE69128757T patent/DE69128757T2/de not_active Expired - Fee Related
- 1991-09-30 US US07/767,721 patent/US5282168A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5282168A (en) | 1994-01-25 |
| EP0479098A3 (en) | 1992-12-23 |
| JP2616198B2 (ja) | 1997-06-04 |
| EP0479098A2 (de) | 1992-04-08 |
| JPH04141891A (ja) | 1992-05-15 |
| DE69128757T2 (de) | 1998-08-20 |
| EP0479098B1 (de) | 1998-01-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3851649T2 (de) | Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff. | |
| DE69317927D1 (de) | Halbleiterspeicheranordnung mit einer Adressübergangsabfühlschaltung | |
| KR910020727A (ko) | 반도체 메모리의 센스앰프 구동회로 | |
| DE69124291D1 (de) | Halbleiterspeicher mit verbesserter Leseanordnung | |
| DE3854278D1 (de) | Aus einer Vielzahl von Eintransistorspeicherzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff. | |
| DE69216695D1 (de) | Halbleiterspeicher | |
| DE69123409T2 (de) | Halbleiterspeicherschaltung | |
| DE69125542D1 (de) | Dynamischer Direktzugriffspeicher | |
| DE69028625T2 (de) | Dynamische Speichereinrichtung mit wahlfreiem Zugriff | |
| DE69127317D1 (de) | Halbleiterspeicherschaltung | |
| DE69131872T2 (de) | Dynamische Halbleiterspeicherschaltung | |
| DE69128757D1 (de) | Direktzugriffspeicheranordnung mit einer aus bipolaren Transistoren ausgeführten Abfühlverstärkerschaltung | |
| DE69119617D1 (de) | Halbleiterspeicherschaltung | |
| DE69119203D1 (de) | Dynamische Direktzugriffspeicheranordnung mit verbesserter Auffrischungsschaltung | |
| DE69132436D1 (de) | Halbleiterspeicher mit spaltendekodiertem Bitleitungsausgleich | |
| DE69301795D1 (de) | Speicherwörterverwaltungsschaltung | |
| DE69119636D1 (de) | Halbleiterspeicherschaltung | |
| DE69129739D1 (de) | Speicherschaltung | |
| DE69221192T2 (de) | Halbleiterspeicherschaltung | |
| DE69128676D1 (de) | Halbleiterspeicheranordnung mit einer Wortleitungstreiberschaltung | |
| DE69222973T2 (de) | Integrierte Schaltung bestehend aus SRAM-Zellen | |
| DE3851181D1 (de) | Halbleiterspeicheranordnung ohne Begrenzung mit einer Vielheit von Schubladespeichern. | |
| KR920005149A (ko) | 반도체 메모리 장치의 센스앰프 제어회로 | |
| DE69215166T2 (de) | Halbleiterspeicher | |
| KR900008761A (ko) | 증폭기 트랜지스터를 갖는 증폭기회로 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
| 8339 | Ceased/non-payment of the annual fee |