DE69127952D1 - III-V Verbindungs-Halbleiter-Vorrichtung, Drucker- und Anzeigevorrichtung unter Verwendung derselben, und Verfahren zur Herstellung dieser Vorrichtung - Google Patents
III-V Verbindungs-Halbleiter-Vorrichtung, Drucker- und Anzeigevorrichtung unter Verwendung derselben, und Verfahren zur Herstellung dieser VorrichtungInfo
- Publication number
- DE69127952D1 DE69127952D1 DE69127952T DE69127952T DE69127952D1 DE 69127952 D1 DE69127952 D1 DE 69127952D1 DE 69127952 T DE69127952 T DE 69127952T DE 69127952 T DE69127952 T DE 69127952T DE 69127952 D1 DE69127952 D1 DE 69127952D1
- Authority
- DE
- Germany
- Prior art keywords
- iii
- compound semiconductor
- printer
- manufacturing
- methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30339490 | 1990-11-07 | ||
JP2316256A JPH04186780A (ja) | 1990-11-20 | 1990-11-20 | 半導体素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69127952D1 true DE69127952D1 (de) | 1997-11-20 |
DE69127952T2 DE69127952T2 (de) | 1998-03-05 |
Family
ID=26563503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69127952T Expired - Fee Related DE69127952T2 (de) | 1990-11-07 | 1991-11-06 | III-V Verbindungs-Halbleiter-Vorrichtung, Drucker- und Anzeigevorrichtung unter Verwendung derselben, und Verfahren zur Herstellung dieser Vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5659184A (de) |
EP (1) | EP0484922B1 (de) |
AT (1) | ATE159302T1 (de) |
DE (1) | DE69127952T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE150213T1 (de) * | 1991-05-23 | 1997-03-15 | Canon Kk | Lichtemittierende vorrichtung, optischer druckkopf mit solcher vorrichtung, und optischer drucker mit solchem druckkopf |
US5907768A (en) * | 1996-08-16 | 1999-05-25 | Kobe Steel Usa Inc. | Methods for fabricating microelectronic structures including semiconductor islands |
US5955776A (en) * | 1996-12-04 | 1999-09-21 | Ball Semiconductor, Inc. | Spherical shaped semiconductor integrated circuit |
EP0996173B1 (de) * | 1998-10-23 | 2015-12-30 | Xerox Corporation | Halbleiterstrukturen mit polykristallinen GaN-Schichten und Herstellungsverfahren |
US6498643B1 (en) | 2000-11-13 | 2002-12-24 | Ball Semiconductor, Inc. | Spherical surface inspection system |
JP4310076B2 (ja) * | 2001-05-31 | 2009-08-05 | キヤノン株式会社 | 結晶性薄膜の製造方法 |
DE10335081A1 (de) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip |
DE10335080A1 (de) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
JP4502382B2 (ja) * | 2004-11-02 | 2010-07-14 | キヤノン株式会社 | 有機トランジスタ |
JP2006245238A (ja) * | 2005-03-02 | 2006-09-14 | Canon Inc | スルーホールの形成方法および電子回路の製造方法 |
US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
EP2801786B1 (de) * | 2013-05-08 | 2019-01-02 | Sick AG | Optoelektronischer Sensor und Verfahren zur Erkennung von Objektkanten |
WO2018236356A1 (en) * | 2017-06-20 | 2018-12-27 | Intel Corporation | FERROELECTRIC FIELD EFFECT TRANSISTORS (FEFET) HAVING COMPOUND SEMICONDUCTOR CHANNELS |
US11640995B2 (en) | 2017-06-20 | 2023-05-02 | Intel Corporation | Ferroelectric field effect transistors (FeFETs) having band-engineered interface layer |
CN110767668B (zh) * | 2019-12-30 | 2020-03-27 | 杭州美迪凯光电科技股份有限公司 | 含纳米级表面的clcc封装体盖板、封装体和摄像模组 |
CN110992853B (zh) * | 2019-11-19 | 2021-03-12 | 西安交通大学 | 一种发光水晶字的制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6048384A (ja) * | 1983-08-26 | 1985-03-16 | Ricoh Co Ltd | Ledアレイヘツド |
US4657603A (en) * | 1984-10-10 | 1987-04-14 | Siemens Aktiengesellschaft | Method for the manufacture of gallium arsenide thin film solar cells |
DE3723222A1 (de) * | 1986-07-16 | 1988-02-11 | Mitsubishi Cable Ind Ltd | Material fuer ein lichtemittierendes element und verfahren zur zuechtung von dessen kristallen |
CA1332039C (en) * | 1987-03-26 | 1994-09-20 | Takao Yonehara | Ii - vi group compound crystal article and process for producing the same |
EP0284437A3 (de) * | 1987-03-26 | 1989-03-15 | Canon Kabushiki Kaisha | Kristalliner Gegenstand aus III-V-Gruppe-Verbindung und Verfahren zu seiner Herstellung |
US5304820A (en) * | 1987-03-27 | 1994-04-19 | Canon Kabushiki Kaisha | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
CA1321121C (en) * | 1987-03-27 | 1993-08-10 | Hiroyuki Tokunaga | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
JPS6451677A (en) * | 1987-08-24 | 1989-02-27 | Canon Kk | Electroluminescence element |
JPH02125765A (ja) * | 1988-11-04 | 1990-05-14 | Mitsubishi Electric Corp | Ledアレイ・ヘッド |
JPH02201975A (ja) * | 1989-01-31 | 1990-08-10 | Canon Inc | 発光装置 |
JP2858434B2 (ja) * | 1989-03-31 | 1999-02-17 | キヤノン株式会社 | 結晶の形成方法および結晶物品 |
JP3207918B2 (ja) * | 1991-04-22 | 2001-09-10 | キヤノン株式会社 | Iii−v族化合物の多結晶半導体材料を用いた発光素子およびその製造方法 |
-
1991
- 1991-11-06 EP EP91118935A patent/EP0484922B1/de not_active Expired - Lifetime
- 1991-11-06 DE DE69127952T patent/DE69127952T2/de not_active Expired - Fee Related
- 1991-11-06 AT AT91118935T patent/ATE159302T1/de not_active IP Right Cessation
-
1994
- 1994-06-20 US US08/262,772 patent/US5659184A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5659184A (en) | 1997-08-19 |
ATE159302T1 (de) | 1997-11-15 |
EP0484922A1 (de) | 1992-05-13 |
DE69127952T2 (de) | 1998-03-05 |
EP0484922B1 (de) | 1997-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |