DE69126623D1 - Hochfrequenzoszillator mit kointegriertem dünnfilmresonator und aktiver schaltung - Google Patents

Hochfrequenzoszillator mit kointegriertem dünnfilmresonator und aktiver schaltung

Info

Publication number
DE69126623D1
DE69126623D1 DE69126623T DE69126623T DE69126623D1 DE 69126623 D1 DE69126623 D1 DE 69126623D1 DE 69126623 T DE69126623 T DE 69126623T DE 69126623 T DE69126623 T DE 69126623T DE 69126623 D1 DE69126623 D1 DE 69126623D1
Authority
DE
Germany
Prior art keywords
cointegrated
thin film
frequency oscillator
film resonator
active switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69126623T
Other languages
English (en)
Other versions
DE69126623T2 (de
Inventor
Robert Weber
Stanley Burns
Steve Braymen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Iowa Research Foundation UIRF
Iowa State University Research Foundation ISURF
Original Assignee
University of Iowa Research Foundation UIRF
Iowa State University Research Foundation ISURF
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Iowa Research Foundation UIRF, Iowa State University Research Foundation ISURF filed Critical University of Iowa Research Foundation UIRF
Publication of DE69126623D1 publication Critical patent/DE69126623D1/de
Application granted granted Critical
Publication of DE69126623T2 publication Critical patent/DE69126623T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
DE69126623T 1990-12-04 1991-12-03 Hochfrequenzoszillator mit kointegriertem dünnfilmresonator und aktiver schaltung Expired - Fee Related DE69126623T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/622,251 US5075641A (en) 1990-12-04 1990-12-04 High frequency oscillator comprising cointegrated thin film resonator and active device
PCT/US1991/009031 WO1992010875A1 (en) 1990-12-04 1991-12-03 High frequency oscillator comprising cointegrated thin film resonator and active device

Publications (2)

Publication Number Publication Date
DE69126623D1 true DE69126623D1 (de) 1997-07-24
DE69126623T2 DE69126623T2 (de) 1997-12-18

Family

ID=24493493

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126623T Expired - Fee Related DE69126623T2 (de) 1990-12-04 1991-12-03 Hochfrequenzoszillator mit kointegriertem dünnfilmresonator und aktiver schaltung

Country Status (6)

Country Link
US (1) US5075641A (de)
EP (1) EP0560925B1 (de)
JP (1) JPH06503693A (de)
CA (1) CA2097717A1 (de)
DE (1) DE69126623T2 (de)
WO (1) WO1992010875A1 (de)

Families Citing this family (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210455A (en) * 1990-07-26 1993-05-11 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion
US5162691A (en) * 1991-01-22 1992-11-10 The United States Of America As Represented By The Secretary Of The Army Cantilevered air-gap type thin film piezoelectric resonator
US5747857A (en) * 1991-03-13 1998-05-05 Matsushita Electric Industrial Co., Ltd. Electronic components having high-frequency elements and methods of manufacture therefor
US5668057A (en) * 1991-03-13 1997-09-16 Matsushita Electric Industrial Co., Ltd. Methods of manufacture for electronic components having high-frequency elements
US5339051A (en) * 1991-12-09 1994-08-16 Sandia Corporation Micro-machined resonator oscillator
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
US5348617A (en) * 1991-12-23 1994-09-20 Iowa State University Research Foundation, Inc. Selective etching process
US5166646A (en) * 1992-02-07 1992-11-24 Motorola, Inc. Integrated tunable resonators for use in oscillators and filters
JPH06291587A (ja) * 1992-07-08 1994-10-18 Matsushita Electric Ind Co Ltd 圧電振動子
JPH06350376A (ja) * 1993-01-25 1994-12-22 Matsushita Electric Ind Co Ltd 気密封止された圧電デバイスおよび気密封止パッケージ
US5373268A (en) * 1993-02-01 1994-12-13 Motorola, Inc. Thin film resonator having stacked acoustic reflecting impedance matching layers and method
US5410208A (en) * 1993-04-12 1995-04-25 Acuson Corporation Ultrasound transducers with reduced sidelobes and method for manufacture thereof
JPH07193294A (ja) * 1993-11-01 1995-07-28 Matsushita Electric Ind Co Ltd 電子部品およびその製造方法
DE69409215T2 (de) * 1993-12-06 1998-07-16 Matsushita Electric Ind Co Ltd Hybrid Magnetstruktur und deren Herstellungsverfahren
JP3435844B2 (ja) * 1994-03-07 2003-08-11 株式会社デンソー 半導体加速度センサ及びその製造方法
JPH08148968A (ja) * 1994-11-24 1996-06-07 Mitsubishi Electric Corp 薄膜圧電素子
US5956292A (en) * 1995-04-13 1999-09-21 The Charles Stark Draper Laboratory, Inc. Monolithic micromachined piezoelectric acoustic transducer and transducer array and method of making same
US5596239A (en) * 1995-06-29 1997-01-21 Motorola, Inc. Enhanced quality factor resonator
US5696423A (en) * 1995-06-29 1997-12-09 Motorola, Inc. Temperature compenated resonator and method
US5617065A (en) * 1995-06-29 1997-04-01 Motorola, Inc. Filter using enhanced quality factor resonator and method
DE19630150B4 (de) * 1995-07-28 2009-03-05 Denso Corp., Kariya-shi Verfahren zum Entwerfen einer Halbleitervorrichtung
FR2746229B1 (fr) * 1996-03-15 1998-05-22 Dispositif electronique comprenant une base de temps integree
US5801476A (en) * 1996-08-09 1998-09-01 The United States Of America As Represented By The Secretary Of The Army Thickness mode acoustic wave resonator
US5783973A (en) 1997-02-24 1998-07-21 The Charles Stark Draper Laboratory, Inc. Temperature insensitive silicon oscillator and precision voltage reference formed therefrom
KR20010073196A (ko) * 1997-04-24 2001-07-31 다니구찌 이찌로오, 기타오카 다카시 박막 압전 소자 및 박막 압전 소자의 제조 방법 및 회로소자
US5932953A (en) * 1997-06-30 1999-08-03 Iowa State University Research Foundation, Inc. Method and system for detecting material using piezoelectric resonators
JPH11163022A (ja) * 1997-11-28 1999-06-18 Sony Corp 半導体装置、その製造方法及び電子機器
FI106894B (fi) * 1998-06-02 2001-04-30 Nokia Mobile Phones Ltd Resonaattorirakenteita
WO2000044054A1 (fr) * 1999-01-22 2000-07-27 Kansai Research Institute Dispositif a film mince piezoelectrique, procede de production associe et tete d'enregistrement a jet d'encre
JP3531522B2 (ja) * 1999-04-19 2004-05-31 株式会社村田製作所 圧電共振子
US6699400B1 (en) * 1999-06-04 2004-03-02 Arne W. Ballantine Etch process and apparatus therefor
US6300706B1 (en) * 1999-07-14 2001-10-09 The United States Of America As Represented By The Secretary Of The Army Compound semiconductor monolithic frequency sources and actuators
SE519915C2 (sv) 1999-09-08 2003-04-22 Ericsson Telefon Ab L M Anordning och metod vid spänningskontrollerad oscillator
US6339276B1 (en) * 1999-11-01 2002-01-15 Agere Systems Guardian Corp. Incremental tuning process for electrical resonators based on mechanical motion
US6746577B1 (en) 1999-12-16 2004-06-08 Agere Systems, Inc. Method and apparatus for thickness control and reproducibility of dielectric film deposition
US6524971B1 (en) 1999-12-17 2003-02-25 Agere Systems, Inc. Method of deposition of films
US6441703B1 (en) 2000-01-18 2002-08-27 Texas Instruments Incorporated Multiple frequency acoustic reflector array and monolithic cover for resonators and method
US6452310B1 (en) 2000-01-18 2002-09-17 Texas Instruments Incorporated Thin film resonator and method
US6306313B1 (en) 2000-02-04 2001-10-23 Agere Systems Guardian Corp. Selective etching of thin films
US7296329B1 (en) 2000-02-04 2007-11-20 Agere Systems Inc. Method of isolation for acoustic resonator device
US6377136B1 (en) 2000-02-04 2002-04-23 Agere Systems Guardian Corporation Thin film resonator filter having at least one component with different resonant frequency sets or electrode capacitance
US6323744B1 (en) 2000-02-04 2001-11-27 Agere Systems Guardian Corp. Grounding of TFR ladder filters
US6437667B1 (en) 2000-02-04 2002-08-20 Agere Systems Guardian Corp. Method of tuning thin film resonator filters by removing or adding piezoelectric material
US6384697B1 (en) * 2000-05-08 2002-05-07 Agilent Technologies, Inc. Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator
US6420202B1 (en) * 2000-05-16 2002-07-16 Agere Systems Guardian Corp. Method for shaping thin film resonators to shape acoustic modes therein
US6603241B1 (en) 2000-05-23 2003-08-05 Agere Systems, Inc. Acoustic mirror materials for acoustic devices
US6555946B1 (en) * 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6355498B1 (en) 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
US6486751B1 (en) 2000-09-26 2002-11-26 Agere Systems Inc. Increased bandwidth thin film resonator having a columnar structure
US6525610B1 (en) * 2000-10-20 2003-02-25 Itt Manufacturing Enterprises, Inc. Dual plane microstrip power amplifier
US6674291B1 (en) 2000-10-30 2004-01-06 Agere Systems Guardian Corp. Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom
US6587212B1 (en) 2000-10-31 2003-07-01 Agere Systems Inc. Method and apparatus for studying vibrational modes of an electro-acoustic device
US6743731B1 (en) 2000-11-17 2004-06-01 Agere Systems Inc. Method for making a radio frequency component and component produced thereby
US6424237B1 (en) * 2000-12-21 2002-07-23 Agilent Technologies, Inc. Bulk acoustic resonator perimeter reflection system
US6515402B2 (en) * 2001-01-24 2003-02-04 Koninklijke Philips Electronics N.V. Array of ultrasound transducers
US7435613B2 (en) * 2001-02-12 2008-10-14 Agere Systems Inc. Methods of fabricating a membrane with improved mechanical integrity
US6710681B2 (en) * 2001-07-13 2004-03-23 Agilent Technologies, Inc. Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same
US6548937B1 (en) * 2002-05-01 2003-04-15 Koninklijke Philips Electronics N.V. Array of membrane ultrasound transducers
DE20221966U1 (de) * 2002-06-06 2010-02-25 Epcos Ag Mit akustischen Wellen arbeitendes Bauelement mit einem Anpaßnetzwerk
WO2004017063A2 (de) 2002-07-19 2004-02-26 Siemens Aktiengesellschaft Vorrichtung und verfahren zur detektion einer substanz mithilfe eines hochfrequenten piezoakustischen dünnfilmresonators
US6816035B2 (en) * 2002-08-08 2004-11-09 Intel Corporation Forming film bulk acoustic resonator filters
US7152289B2 (en) * 2002-09-25 2006-12-26 Intel Corporation Method for forming bulk resonators silicon <110> substrate
US7275292B2 (en) 2003-03-07 2007-10-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method for fabricating an acoustical resonator on a substrate
JP2004320127A (ja) * 2003-04-11 2004-11-11 Tdk Corp 薄膜圧電共振子の製造方法、薄膜圧電共振子の製造装置、薄膜圧電共振子および電子部品
US7303996B2 (en) * 2003-10-01 2007-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
JP2005130068A (ja) * 2003-10-22 2005-05-19 Tdk Corp 圧電共振器の製造方法
US7057477B2 (en) * 2003-12-24 2006-06-06 Intel Corporation Integration of FBAR filter(s) and on-chip inductors
DE102004018854A1 (de) * 2004-04-19 2005-11-03 Work Microwave Elektronische Bauelemente Gmbh Kompakte Aufbauform für Hochfreuenz-Oszillatoren mit integrierter Schaltung und externem Resonator
US7615833B2 (en) 2004-07-13 2009-11-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator package and method of fabricating same
US7388454B2 (en) 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7202560B2 (en) 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US7791434B2 (en) 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
US7427819B2 (en) * 2005-03-04 2008-09-23 Avago Wireless Ip Pte Ltd Film-bulk acoustic wave resonator with motion plate and method
US7214564B2 (en) * 2005-03-17 2007-05-08 Chung Shan Institute Of Science And Technology Method of forming film bulk acoustic wave filter assembly
US7369013B2 (en) 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
US7868522B2 (en) * 2005-09-09 2011-01-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Adjusted frequency temperature coefficient resonator
US7737807B2 (en) 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
US7525398B2 (en) 2005-10-18 2009-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically communicating data signals across an electrical isolation barrier
US7425787B2 (en) 2005-10-18 2008-09-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator
US7675390B2 (en) 2005-10-18 2010-03-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator
US7463499B2 (en) 2005-10-31 2008-12-09 Avago Technologies General Ip (Singapore) Pte Ltd. AC-DC power converter
US7561009B2 (en) 2005-11-30 2009-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with temperature compensation
US7612636B2 (en) 2006-01-30 2009-11-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Impedance transforming bulk acoustic wave baluns
US7746677B2 (en) 2006-03-09 2010-06-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US7479685B2 (en) 2006-03-10 2009-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Electronic device on substrate with cavity and mitigated parasitic leakage path
JP4252584B2 (ja) * 2006-04-28 2009-04-08 富士通メディアデバイス株式会社 圧電薄膜共振器およびフィルタ
US7629865B2 (en) * 2006-05-31 2009-12-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters
US7508286B2 (en) 2006-09-28 2009-03-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. HBAR oscillator and method of manufacture
US7791435B2 (en) 2007-09-28 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single stack coupled resonators having differential output
US8624337B2 (en) * 2007-12-11 2014-01-07 Cornell University Resonant body transistor and oscillator
US8410868B2 (en) * 2009-06-04 2013-04-02 Sand 9, Inc. Methods and apparatus for temperature control of devices and mechanical resonating structures
US8476809B2 (en) 2008-04-29 2013-07-02 Sand 9, Inc. Microelectromechanical systems (MEMS) resonators and related apparatus and methods
US7855618B2 (en) 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
US7732977B2 (en) 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
DE102008052437A1 (de) * 2008-10-21 2010-04-29 Siemens Aktiengesellschaft Vorrichtung und Verfahren zur Detektion einer Substanz mit Hilfe eines Dünnfilmresonators mit Isolationsschicht
US9048811B2 (en) 2009-03-31 2015-06-02 Sand 9, Inc. Integration of piezoelectric materials with substrates
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US8193877B2 (en) 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
WO2012137574A1 (ja) 2011-04-01 2012-10-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法ならびに携帯電話機
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
US9653516B2 (en) * 2014-12-30 2017-05-16 Win Semiconductors Corp. Acoustic wave device structure, integrated structure of power amplifier and acoustic wave device, and fabrication methods thereof
US11056532B2 (en) * 2016-07-01 2021-07-06 Intel Corporation Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline III-N semiconductor transistor devices
US10547286B2 (en) 2017-02-03 2020-01-28 Samsung Electro-Mechanics Co., Ltd. Filter and front end module including the same
KR101862514B1 (ko) * 2017-05-18 2018-05-29 삼성전기주식회사 체적 음향 공진기
CN114826192B (zh) * 2022-05-26 2024-07-26 武汉大学 三维集成的mems振荡器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137317A (ja) * 1982-02-09 1983-08-15 Nec Corp 圧電薄膜複合振動子
JPS60217711A (ja) * 1984-04-13 1985-10-31 Nec Corp 薄膜圧電振動子の製造方法
US4816778A (en) * 1987-12-18 1989-03-28 Rockwell International Corporation Inductorless MMIC oscillator
US4988957A (en) * 1989-05-26 1991-01-29 Iowa State University Research Foundation, Inc. Electronically-tuned thin-film resonator/filter controlled oscillator

Also Published As

Publication number Publication date
WO1992010875A1 (en) 1992-06-25
US5075641A (en) 1991-12-24
EP0560925B1 (de) 1997-06-18
CA2097717A1 (en) 1992-06-05
EP0560925A4 (en) 1993-10-13
EP0560925A1 (de) 1993-09-22
DE69126623T2 (de) 1997-12-18
JPH06503693A (ja) 1994-04-21

Similar Documents

Publication Publication Date Title
DE69126623D1 (de) Hochfrequenzoszillator mit kointegriertem dünnfilmresonator und aktiver schaltung
DE69404935D1 (de) Frequenzverdoppler mit oszillator
FI956351A0 (fi) Viritettävä resonaattori mikroaalto-oskillaattoreita ja suodattimia varten
DK0700600T3 (da) Digital styret krystaloscillator
IT8020470A0 (it) Oscillatore fluidico con inertanza risonante e circuito ad elasticita&#39; dinamica.
DE69225125D1 (de) Mikrowellenoszillator
SE0004487D0 (sv) Oven-heated crystal resonator and oscillator assembly
DE69418127D1 (de) Filter und Zweimodenresonator in Streifenleiter-Technik
DE69427730D1 (de) Kristallresonator
DE69102592D1 (de) Spannungsgesteuerte ausgeglichene Quarzoszillatorschaltung.
DE69815321D1 (de) Laser mit externem resonator und optisch geschaltetem abstimmechanismus
DE59811745D1 (de) Mechanischer Resonator mit variabler Resonanzfrequenz
DE69032666D1 (de) Eingekapselter piezoelektrischer Resonator
DE69530911D1 (de) Spannungsgesteuerter Oszillator mit breitem Frequenzbereich und mit geringem Zittern
DE68901670D1 (de) Resonatoren aus hartem. elastischem material und sehr stabile oszillatoren.
DE59808497D1 (de) Oszillatorstruktur mit wenigstens einem oszillator-schaltkreis und wenigstens einem resonator
DE69216531D1 (de) Mikrowellenoszillatoren und Sender mit Frequenzstabilisierung
DE69314373D1 (de) Frequenzabstimmung mit Frequenzsynthesierer
FI902827A0 (fi) Lämpötilasäädetty kideoskillaattoripiiri
DE3482747D1 (de) Programmierbarer oszillator mit abschaltmoeglichkeit und frequenzanpassung.
EP0459631A3 (en) At-cut crystal oscillating element and method of making the same
DE69123098D1 (de) Reflektor mit passiver und aktiver Temperaturkompensation
DE69125688D1 (de) Mikrowellen-Oszillator
KR910016132A (ko) 다전극 수정 진동자
DE69519320D1 (de) Spannungsgesteuerte Oszillatorschaltung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee