DE69125820D1 - Nebenschluss-Regulator mit Tunneloxid-Reference - Google Patents

Nebenschluss-Regulator mit Tunneloxid-Reference

Info

Publication number
DE69125820D1
DE69125820D1 DE69125820T DE69125820T DE69125820D1 DE 69125820 D1 DE69125820 D1 DE 69125820D1 DE 69125820 T DE69125820 T DE 69125820T DE 69125820 T DE69125820 T DE 69125820T DE 69125820 D1 DE69125820 D1 DE 69125820D1
Authority
DE
Germany
Prior art keywords
tunnel oxide
shunt regulator
oxide reference
shunt
regulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125820T
Other languages
English (en)
Other versions
DE69125820T2 (de
Inventor
Frank J Bohac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DE69125820D1 publication Critical patent/DE69125820D1/de
Application granted granted Critical
Publication of DE69125820T2 publication Critical patent/DE69125820T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/613—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in parallel with the load as final control devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Direct Current Feeding And Distribution (AREA)
DE69125820T 1991-04-25 1991-12-12 Nebenschluss-Regulator mit Tunneloxid-Reference Expired - Fee Related DE69125820T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/691,296 US5103160A (en) 1991-04-25 1991-04-25 Shunt regulator with tunnel oxide reference

Publications (2)

Publication Number Publication Date
DE69125820D1 true DE69125820D1 (de) 1997-05-28
DE69125820T2 DE69125820T2 (de) 1997-10-09

Family

ID=24775973

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125820T Expired - Fee Related DE69125820T2 (de) 1991-04-25 1991-12-12 Nebenschluss-Regulator mit Tunneloxid-Reference

Country Status (4)

Country Link
US (1) US5103160A (de)
EP (1) EP0510282B1 (de)
JP (1) JPH0770236B2 (de)
DE (1) DE69125820T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59105528D1 (de) * 1991-02-18 1995-06-22 Siemens Ag Integrierbarer Shunt-Regler.
DE69325809T2 (de) * 1993-11-24 1999-12-09 St Microelectronics Srl Nicht-flüchtige Speicheranordnung mit Mitteln zur Erzeugung negativer Programmierspannungen
US5701071A (en) * 1995-08-21 1997-12-23 Fujitsu Limited Systems for controlling power consumption in integrated circuits
US7495471B2 (en) * 2006-03-06 2009-02-24 Altera Corporation Adjustable transistor body bias circuitry
JP5579370B2 (ja) * 2008-04-14 2014-08-27 ローム株式会社 半導体装置
US9356158B2 (en) 2012-07-20 2016-05-31 Semiconductor Components Industries, Llc Electronic device including a tunnel structure

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference
US4447784B1 (en) * 1978-03-21 2000-10-17 Nat Semiconductor Corp Temperature compensated bandgap voltage reference circuit
US4374357A (en) * 1981-07-27 1983-02-15 Motorola, Inc. Switched capacitor precision current source
JPS60170986A (ja) * 1984-02-16 1985-09-04 Seiko Instr & Electronics Ltd 定電圧回路
JPS60237513A (ja) * 1984-05-10 1985-11-26 Seiko Instr & Electronics Ltd 定電圧回路
US4628250A (en) * 1984-11-20 1986-12-09 Thomson Components-Mostok Corporation Power conserving CMOS reference voltage source
JPS6269719A (ja) * 1985-09-24 1987-03-31 Toshiba Corp レベル変換論理回路
JPH0740050B2 (ja) * 1987-05-20 1995-05-01 松下電器産業株式会社 電圧検知回路
JPS6471325A (en) * 1987-09-11 1989-03-16 Fujitsu Ltd Bipolar cmos inverter
DE3878242D1 (de) * 1988-10-27 1993-03-18 Siemens Ag Leistungsendstufe mit einer last.
GB2226664B (en) * 1988-11-26 1992-09-09 Motorola Inc Shunt regulators
JP2944104B2 (ja) * 1989-06-13 1999-08-30 株式会社東芝 不揮発性半導体記憶装置
FR2650109B1 (fr) * 1989-07-20 1993-04-02 Gemplus Card Int Circuit integre mos a tension de seuil ajustable
KR920004587B1 (ko) * 1989-10-24 1992-06-11 삼성전자 주식회사 메모리장치의 기준전압 안정화회로
FR2659165A1 (fr) * 1990-03-05 1991-09-06 Sgs Thomson Microelectronics Memoire ultra-rapide comportant un limiteur de la tension de drain des cellules.

Also Published As

Publication number Publication date
JPH0770236B2 (ja) 1995-07-31
EP0510282B1 (de) 1997-04-23
JPH05102492A (ja) 1993-04-23
US5103160A (en) 1992-04-07
EP0510282A3 (en) 1994-07-27
DE69125820T2 (de) 1997-10-09
EP0510282A2 (de) 1992-10-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON CO., LEXINGTON, MASS., US

8339 Ceased/non-payment of the annual fee