KR900702655A - 쌍방향이 가능한 전류미러를 갖는 mosfet 소자 - Google Patents
쌍방향이 가능한 전류미러를 갖는 mosfet 소자Info
- Publication number
- KR900702655A KR900702655A KR1019900700255A KR900700255A KR900702655A KR 900702655 A KR900702655 A KR 900702655A KR 1019900700255 A KR1019900700255 A KR 1019900700255A KR 900700255 A KR900700255 A KR 900700255A KR 900702655 A KR900702655 A KR 900702655A
- Authority
- KR
- South Korea
- Prior art keywords
- current mirror
- mosfet device
- directional current
- directional
- mosfet
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20404288A | 1988-06-08 | 1988-06-08 | |
| US35978189A | 1989-05-31 | 1989-05-31 | |
| PCT/US1989/002371 WO1989012361A1 (en) | 1988-06-08 | 1989-06-01 | Mosfet device with current mirror having bi-directional capability |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR900702655A true KR900702655A (ko) | 1990-12-08 |
Family
ID=26899123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900700255A KR900702655A (ko) | 1988-06-08 | 1990-02-08 | 쌍방향이 가능한 전류미러를 갖는 mosfet 소자 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR900702655A (ko) |
| WO (1) | WO1989012361A1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3681374B2 (ja) | 2002-12-19 | 2005-08-10 | 株式会社日立製作所 | 電流検出装置及びそれを用いたｐｗｍインバータ |
| US7629787B2 (en) * | 2007-01-03 | 2009-12-08 | Qixiang Lu | Current sensor having shunt resistor and clamper diode for motor control |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE30173E (en) * | 1977-02-14 | 1979-12-18 | Rca Corporation | Current mirror amplifier |
| US4500802A (en) * | 1982-06-21 | 1985-02-19 | Eaton Corporation | Three terminal bidirectional source to source FET circuit |
| US4477742A (en) * | 1982-06-21 | 1984-10-16 | Eaton Corporation | Three terminal bidirectional drain to drain FET circuit |
| US4574207A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Lateral bidirectional dual notch FET with non-planar main electrodes |
| US4574209A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Split gate EFET and circuitry |
| JPS59225A (ja) * | 1982-06-25 | 1984-01-05 | Nec Corp | 双方向性制御回路 |
| US4491750A (en) * | 1982-09-28 | 1985-01-01 | Eaton Corporation | Bidirectionally source stacked FETs with drain-referenced common gating |
-
1989
- 1989-06-01 WO PCT/US1989/002371 patent/WO1989012361A1/en unknown
-
1990
- 1990-02-08 KR KR1019900700255A patent/KR900702655A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1989012361A1 (en) | 1989-12-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |