DE69119946T2 - Verfahren zur Herstellung einer Halbleitervorrichtung mit Lotanschlussdrähten aus unterschiedlichen Materialien - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung mit Lotanschlussdrähten aus unterschiedlichen Materialien

Info

Publication number
DE69119946T2
DE69119946T2 DE69119946T DE69119946T DE69119946T2 DE 69119946 T2 DE69119946 T2 DE 69119946T2 DE 69119946 T DE69119946 T DE 69119946T DE 69119946 T DE69119946 T DE 69119946T DE 69119946 T2 DE69119946 T2 DE 69119946T2
Authority
DE
Germany
Prior art keywords
bonding
power
wire
bonding wires
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69119946T
Other languages
German (de)
English (en)
Other versions
DE69119946D1 (de
Inventor
Masaki Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69119946D1 publication Critical patent/DE69119946D1/de
Publication of DE69119946T2 publication Critical patent/DE69119946T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07552—Controlling the environment, e.g. atmosphere composition or temperature changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07555—Controlling the environment, e.g. atmosphere composition or temperature changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/537—Multiple bond wires having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/557—Multiple bond wires having different materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)
DE69119946T 1990-03-15 1991-03-15 Verfahren zur Herstellung einer Halbleitervorrichtung mit Lotanschlussdrähten aus unterschiedlichen Materialien Expired - Lifetime DE69119946T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2062789A JPH0760839B2 (ja) 1990-03-15 1990-03-15 半導体装置

Publications (2)

Publication Number Publication Date
DE69119946D1 DE69119946D1 (de) 1996-07-11
DE69119946T2 true DE69119946T2 (de) 1996-11-28

Family

ID=13210467

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119946T Expired - Lifetime DE69119946T2 (de) 1990-03-15 1991-03-15 Verfahren zur Herstellung einer Halbleitervorrichtung mit Lotanschlussdrähten aus unterschiedlichen Materialien

Country Status (5)

Country Link
US (1) US5173762A (https=)
EP (1) EP0446937B1 (https=)
JP (1) JPH0760839B2 (https=)
KR (2) KR910017604A (https=)
DE (1) DE69119946T2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29924183U1 (de) 1998-05-05 2002-03-28 International Rectifier Corp., El Segundo, Calif. Gehäuse und Leitungsrahmen für ein Halbleiterbauelement hoher Stromleitfähigkeit, mit großflächigen Verbindungsschlüssen und veränderter Form
US6667547B2 (en) 1998-05-05 2003-12-23 International Rectifier Corporation High current capacity semiconductor device package and lead frame with large area connection posts and modified outline

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644281A (en) * 1992-04-07 1997-07-01 Rohm Co., Ltd. Electronic component incorporating solder fuse wire
JP3459291B2 (ja) * 1993-09-21 2003-10-20 ローム株式会社 半導体チップを備えた電子部品
JPH06216307A (ja) * 1993-01-13 1994-08-05 Mitsubishi Electric Corp 樹脂封止型半導体装置
JP2807396B2 (ja) * 1993-05-25 1998-10-08 ローム株式会社 半導体装置
US5530284A (en) * 1995-03-06 1996-06-25 Motorola, Inc. Semiconductor leadframe structure compatible with differing bond wire materials
EP0882308B1 (de) * 1996-11-11 2004-02-11 Infineon Technologies AG Optimierung der leistungsverbindung zwischen chip und leiterrahmen für leistungsschalter
CN1440077A (zh) * 2002-02-21 2003-09-03 松下电器产业株式会社 半导体装置、设计方法及记录其装置设计程序的记录媒体
TW586203B (en) * 2002-11-04 2004-05-01 Siliconware Precision Industries Co Ltd Semiconductor package with lead frame as chip carrier and method for fabricating the same
JP2004281887A (ja) * 2003-03-18 2004-10-07 Himeji Toshiba Ep Corp リードフレーム及びそれを用いた電子部品
DE102005016830A1 (de) * 2004-04-14 2005-11-03 Denso Corp., Kariya Halbleitervorrichtung und Verfahren zu ihrer Herstellung
US8125060B2 (en) * 2006-12-08 2012-02-28 Infineon Technologies Ag Electronic component with layered frame
JP4830877B2 (ja) * 2007-01-31 2011-12-07 トヨタ自動車株式会社 半導体装置の製造方法
US8237268B2 (en) 2007-03-20 2012-08-07 Infineon Technologies Ag Module comprising a semiconductor chip
JP5192163B2 (ja) * 2007-03-23 2013-05-08 住友電工デバイス・イノベーション株式会社 半導体装置
US8546904B2 (en) * 2011-07-11 2013-10-01 Transcend Information, Inc. Integrated circuit with temperature increasing element and electronic system having the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5716375Y2 (https=) * 1975-04-02 1982-04-06
GB1478393A (en) * 1975-08-12 1977-06-29 Ferranti Ltd Methods of manufacturing semiconductor devices
JPS5821351A (ja) * 1981-07-30 1983-02-08 Toshiba Corp 半導体装置
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPS6396947A (ja) * 1986-10-13 1988-04-27 Mitsubishi Electric Corp 半導体装置用リ−ドフレ−ム
EP0288776A3 (en) * 1987-04-28 1989-03-22 Texas Instruments Incorporated Gold alloy wire connection to copper doped aluminum semiconductor circuit interconnection bonding pad
JPS6459947A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device
MY104152A (en) * 1988-08-12 1994-02-28 Mitsui Chemicals Inc Processes for producing semiconductor devices.
IT1233008B (it) * 1989-09-21 1992-03-14 Sgs Thomson Microelectronics Dispositivo integrato con connessioni perfezionate fra i terminali e la piastrina di materiale semiconduttore integrante componenti elettronici
JPH03157448A (ja) * 1989-11-15 1991-07-05 Mitsubishi Electric Corp 半導体封止用エポキシ樹脂組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29924183U1 (de) 1998-05-05 2002-03-28 International Rectifier Corp., El Segundo, Calif. Gehäuse und Leitungsrahmen für ein Halbleiterbauelement hoher Stromleitfähigkeit, mit großflächigen Verbindungsschlüssen und veränderter Form
US6667547B2 (en) 1998-05-05 2003-12-23 International Rectifier Corporation High current capacity semiconductor device package and lead frame with large area connection posts and modified outline

Also Published As

Publication number Publication date
EP0446937A2 (en) 1991-09-18
EP0446937A3 (https=) 1994-02-02
JPH0760839B2 (ja) 1995-06-28
KR960000464Y1 (ko) 1996-01-10
JPH03265149A (ja) 1991-11-26
US5173762A (en) 1992-12-22
DE69119946D1 (de) 1996-07-11
KR910017604A (ko) 1991-11-05
EP0446937B1 (en) 1996-06-05

Similar Documents

Publication Publication Date Title
DE69119946T2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung mit Lotanschlussdrähten aus unterschiedlichen Materialien
DE69705222T2 (de) Gitteranordnung und verfahren zu deren herstellung
DE4238646B4 (de) Halbleiter-Bauelement mit spezieller Anschlusskonfiguration
DE69526895T2 (de) Verfahren zur Herstellung einer halbleitenden Anordnung und einer Halbleiterscheibe
DE69127587T2 (de) In Kunststoff eingeformte Halbleiteranordnung
DE10295972T5 (de) Nicht in einer Form hergestellte Packung für eine Halbleiteranordnung
DE102007016061B4 (de) Modul mit Halbleiterchip und Verfahren
DE69119938T2 (de) Mit mindestens zwei Trägerteilen versehener Leiterrahmen und Anwendung zu einer im Harz eingebetteten Halbleiter-Einrichtung
DE2815776A1 (de) Halbleiterbauelement mit einer elektrisch und thermisch leitenden tragplatte
DE69126115T2 (de) Direkte Entkupplung einer Mikroschaltung
DE10236689A1 (de) Halbleitervorrichtung
DE69628964T2 (de) Harzvergossenes Halbleiterbauteil und Herstellungsverfahren
DE4207198A1 (de) Zufuehrungsrahmen und halbleitervorrichtung, welche den zufuehrungsrahmen verwendet
DE69004581T2 (de) Plastikumhüllte Hybrid-Halbleiteranordnung.
DE19808193A1 (de) Leadframevorrichtung und entsprechendes Herstellungsverfahren
DE102017207192A1 (de) Halbleitervorrichtung, Herstellungsverfahren und leitfähiges Säulenelement
DE10238781A1 (de) Halbleitervorrichtung
DE69305633T2 (de) Verfahren und Vorrichtung, um Drähte zwischen einem Halbleiterchip und dem zugehörigen Leiterrahmen anzuschliessen
EP0867932A2 (de) Verfahren zur Herstellung von Bonddrahtverbindungen
DE69419881T2 (de) Verpackte Halbeiteranordnung und deren Herstellungsverfahren
DE112018005048T5 (de) Chip mit integrierter schaltung (ic), der zwischen einem offset-leiterrahmen-chip-befestigungspad und einem diskreten chip-befestigungspad befestigt ist
DE10302022B4 (de) Verfahren zur Herstellung eines verkleinerten Chippakets
DE3619636A1 (de) Gehaeuse fuer integrierte schaltkreise
DE69031963T2 (de) Bondapparat und Verfahren
DE102008001671A1 (de) Elektrische Bondverbindungsanordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)