DE69118085D1 - Differentialdruck-Haltungssystem für CVD-Anlage - Google Patents

Differentialdruck-Haltungssystem für CVD-Anlage

Info

Publication number
DE69118085D1
DE69118085D1 DE69118085T DE69118085T DE69118085D1 DE 69118085 D1 DE69118085 D1 DE 69118085D1 DE 69118085 T DE69118085 T DE 69118085T DE 69118085 T DE69118085 T DE 69118085T DE 69118085 D1 DE69118085 D1 DE 69118085D1
Authority
DE
Germany
Prior art keywords
differential pressure
pressure maintenance
cvd
maintenance system
cvd system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69118085T
Other languages
English (en)
Other versions
DE69118085T2 (de
Inventor
Steven C Selbrede
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Genus Inc
Original Assignee
Genus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genus Inc filed Critical Genus Inc
Publication of DE69118085D1 publication Critical patent/DE69118085D1/de
Application granted granted Critical
Publication of DE69118085T2 publication Critical patent/DE69118085T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
DE69118085T 1990-10-12 1991-10-10 Differentialdruck-Haltungssystem für CVD-Anlage Expired - Fee Related DE69118085T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/596,512 US5094885A (en) 1990-10-12 1990-10-12 Differential pressure cvd chuck

Publications (2)

Publication Number Publication Date
DE69118085D1 true DE69118085D1 (de) 1996-04-25
DE69118085T2 DE69118085T2 (de) 1996-10-02

Family

ID=24387594

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69118085T Expired - Fee Related DE69118085T2 (de) 1990-10-12 1991-10-10 Differentialdruck-Haltungssystem für CVD-Anlage

Country Status (4)

Country Link
US (2) US5094885A (de)
EP (1) EP0480735B1 (de)
JP (1) JPH06342760A (de)
DE (1) DE69118085T2 (de)

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
US5447570A (en) * 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
US5843233A (en) * 1990-07-16 1998-12-01 Novellus Systems, Inc. Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
JPH04370924A (ja) * 1991-06-20 1992-12-24 Fujitsu Ltd Ｃｖｄ装置
DE9206635U1 (de) * 1992-05-15 1992-09-10 Leybold Ag, 6450 Hanau, De
JP2603909B2 (ja) * 1992-06-24 1997-04-23 アネルバ株式会社 Ｃｖｄ装置、マルチチャンバ方式ｃｖｄ装置及びその基板処理方法
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3154197B2 (ja) * 1992-06-29 2001-04-09 ソニー株式会社 成膜装置
US5459546A (en) * 1992-08-28 1995-10-17 Penn; Randy J. Method and apparatus for accurate alignment of semiconductor wafers in photo printers
JP3566740B2 (ja) * 1992-09-30 2004-09-15 アプライド マテリアルズ インコーポレイテッド 全ウエハデポジション用装置
US5589224A (en) * 1992-09-30 1996-12-31 Applied Materials, Inc. Apparatus for full wafer deposition
US5421893A (en) * 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
US6123864A (en) 1993-06-02 2000-09-26 Applied Materials, Inc. Etch chamber
JPH0799162A (ja) * 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
JP3165938B2 (ja) * 1993-06-24 2001-05-14 東京エレクトロン株式会社 ガス処理装置
US5421401A (en) * 1994-01-25 1995-06-06 Applied Materials, Inc. Compound clamp ring for semiconductor wafers
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5888304A (en) * 1996-04-02 1999-03-30 Applied Materials, Inc. Heater with shadow ring and purge above wafer surface
US6033480A (en) * 1994-02-23 2000-03-07 Applied Materials, Inc. Wafer edge deposition elimination
US5476549A (en) * 1995-01-24 1995-12-19 Cvd, Inc. Process for an improved laminate of ZnSe and ZnS
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置
JPH08302474A (ja) * 1995-04-28 1996-11-19 Anelva Corp Ｃｖｄ装置の加熱装置
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
US5635244A (en) * 1995-08-28 1997-06-03 Lsi Logic Corporation Method of forming a layer of material on a wafer
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
AU6962196A (en) 1995-09-01 1997-03-27 Advanced Semiconductor Materials America, Inc. Wafer support system
US5796074A (en) * 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
GB2325939B (en) * 1997-01-02 2001-12-19 Cvc Products Inc Thermally conductive chuck for vacuum processor
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US6153260A (en) 1997-04-11 2000-11-28 Applied Materials, Inc. Method for heating exhaust gas in a substrate reactor
JPH10303288A (ja) * 1997-04-26 1998-11-13 Anelva Corp プラズマ処理装置用基板ホルダー
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6138745A (en) * 1997-09-26 2000-10-31 Cvc Products, Inc. Two-stage sealing system for thermally conductive chuck
EP1036406B1 (de) * 1997-11-03 2003-04-02 ASM America, Inc. Verbesserte kleinmassige waferhaleeinrichtung
US6073576A (en) * 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
US6210483B1 (en) 1997-12-02 2001-04-03 Applied Materials, Inc. Anti-notch thinning heater
DE59812627D1 (de) * 1997-12-23 2005-04-07 Unaxis Balzers Ag Haltevorrichtung
WO1999049101A1 (en) * 1998-03-23 1999-09-30 Mattson Technology, Inc. Apparatus and method for cvd and thermal processing of semiconductor substrates
US6179924B1 (en) 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6161311A (en) * 1998-07-10 2000-12-19 Asm America, Inc. System and method for reducing particles in epitaxial reactors
JP3298001B2 (ja) * 1998-07-27 2002-07-02 株式会社スーパーシリコン研究所 エピタキシャル成長炉
US6217034B1 (en) 1998-09-24 2001-04-17 Kla-Tencor Corporation Edge handling wafer chuck
JP4317608B2 (ja) * 1999-01-18 2009-08-19 東京エレクトロン株式会社 成膜装置
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US6436303B1 (en) 1999-07-21 2002-08-20 Applied Materials, Inc. Film removal employing a remote plasma source
US6466426B1 (en) * 1999-08-03 2002-10-15 Applied Materials Inc. Method and apparatus for thermal control of a semiconductor substrate
US6176931B1 (en) 1999-10-29 2001-01-23 International Business Machines Corporation Wafer clamp ring for use in an ionized physical vapor deposition apparatus
JP4422295B2 (ja) 2000-05-17 2010-02-24 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6726955B1 (en) * 2000-06-27 2004-04-27 Applied Materials, Inc. Method of controlling the crystal structure of polycrystalline silicon
US6652655B1 (en) 2000-07-07 2003-11-25 Applied Materials, Inc. Method to isolate multi zone heater from atmosphere
US6521292B1 (en) * 2000-08-04 2003-02-18 Applied Materials, Inc. Substrate support including purge ring having inner edge aligned to wafer edge
US6793766B2 (en) * 2001-01-04 2004-09-21 Applied Materials Inc. Apparatus having platforms positioned for precise centering of semiconductor wafers during processing
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
RU2004122095A (ru) * 2001-12-20 2005-03-27 Эйшапак Холдинг Са (Ch) Устройство для обработки объектов посредством плазменного осаждения
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US6866746B2 (en) * 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
DE10232731A1 (de) * 2002-07-19 2004-02-05 Aixtron Ag Be- und Entladevorrichtung für eine Beschichtungseinrichtung
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
US20050170314A1 (en) * 2002-11-27 2005-08-04 Richard Golden Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design
US20040244949A1 (en) * 2003-05-30 2004-12-09 Tokyo Electron Limited Temperature controlled shield ring
US7129731B2 (en) * 2003-09-02 2006-10-31 Thermal Corp. Heat pipe with chilled liquid condenser system for burn-in testing
US20050067146A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Two phase cooling system method for burn-in testing
US7013956B2 (en) * 2003-09-02 2006-03-21 Thermal Corp. Heat pipe evaporator with porous valve
US20050067147A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Loop thermosyphon for cooling semiconductors during burn-in testing
US7049606B2 (en) * 2003-10-30 2006-05-23 Applied Materials, Inc. Electron beam treatment apparatus
WO2005081283A2 (en) * 2004-02-13 2005-09-01 Asm America, Inc. Substrate support system for reduced autodoping and backside deposition
JP2006179770A (ja) * 2004-12-24 2006-07-06 Watanabe Shoko:Kk 基板表面処理装置
US7576018B2 (en) * 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
US8092606B2 (en) * 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US8662008B2 (en) * 2008-02-07 2014-03-04 Sunpower Corporation Edge coating apparatus for solar cell substrates
US8322300B2 (en) * 2008-02-07 2012-12-04 Sunpower Corporation Edge coating apparatus with movable roller applicator for solar cell substrates
US8409355B2 (en) * 2008-04-24 2013-04-02 Applied Materials, Inc. Low profile process kit
US20090280248A1 (en) * 2008-05-06 2009-11-12 Asm America, Inc. Porous substrate holder with thinned portions
US8801857B2 (en) * 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
US9176186B2 (en) 2009-08-25 2015-11-03 Translarity, Inc. Maintaining a wafer/wafer translator pair in an attached state free of a gasket disposed
US8362797B2 (en) * 2009-08-25 2013-01-29 Advanced Inquiry Systems, Inc. Maintaining a wafer/wafer translator pair in an attached state free of a gasket disposed therebetween
JP5359698B2 (ja) * 2009-08-31 2013-12-04 豊田合成株式会社 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体
KR101840322B1 (ko) 2009-12-31 2018-03-20 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 엣지 및 경사면 증착을 수정하기 위한 쉐도우 링
JP5832173B2 (ja) * 2011-07-11 2015-12-16 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US8826857B2 (en) * 2011-11-21 2014-09-09 Lam Research Corporation Plasma processing assemblies including hinge assemblies
DE102014014070A1 (de) * 2014-09-29 2016-03-31 Forschungszentrum Jülich GmbH Vorrichtung zum geregelten Wärmeübergang auf und von einem Bauteil
DE102016223782A1 (de) * 2016-11-30 2018-05-30 Leybold Gmbh Verfahren zum Betreiben eines Vakuumpumpensystems
US11802340B2 (en) * 2016-12-12 2023-10-31 Applied Materials, Inc. UHV in-situ cryo-cool chamber
JP7045635B2 (ja) * 2017-08-30 2022-04-01 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法
CN111446185A (zh) 2019-01-17 2020-07-24 Asm Ip 控股有限公司 通风基座
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
US11404302B2 (en) 2019-05-22 2022-08-02 Asm Ip Holding B.V. Substrate susceptor using edge purging
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
CN112885738B (zh) * 2020-09-03 2024-02-23 天虹科技股份有限公司 晶片固定机构及使用该晶片固定机构的晶片预清洁机台

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE7710800L (sv) * 1976-10-05 1978-04-06 Western Electric Co Forfarande for astadkommande av ett epitaxiellt skikt pa ett substrat
US4261762A (en) * 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
WO1982001482A1 (en) * 1980-11-06 1982-05-13 Patent Versuch Censor Method and installation for the processing of the upper side of a flat part by means of a liquid
US4512391A (en) * 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
JPH0614520B2 (ja) * 1983-12-26 1994-02-23 株式会社日立製作所 低圧雰囲気内の処理装置
US4527620A (en) * 1984-05-02 1985-07-09 Varian Associates, Inc. Apparatus for controlling thermal transfer in a cyclic vacuum processing system
JPS6223102A (ja) * 1985-07-24 1987-01-31 Hitachi Ltd 分子線エピタキシ装置の基板ホルダ装置
JPH0444216Y2 (de) * 1985-10-07 1992-10-19
US4724621A (en) * 1986-04-17 1988-02-16 Varian Associates, Inc. Wafer processing chuck using slanted clamping pins
JPH0649938B2 (ja) * 1986-09-24 1994-06-29 日本真空技術株式会社 基板ホルダ
DE3633386A1 (de) * 1986-10-01 1988-04-14 Leybold Ag Verfahren und vorrichtung zum behandeln von substraten im vakuum
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
EP0343530B1 (de) * 1988-05-24 2001-11-14 Unaxis Balzers Aktiengesellschaft Vakuumanlage
US4857142A (en) * 1988-09-22 1989-08-15 Fsi International, Inc. Method and apparatus for controlling simultaneous etching of front and back sides of wafers
JP2731855B2 (ja) * 1989-02-14 1998-03-25 アネルバ株式会社 減圧気相成長装置
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition
DE69108285T2 (de) * 1990-04-23 1995-12-14 Genus Inc Peripherieabdichtung für Halbleiterplättchen durch Gasinjektion.
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing

Also Published As

Publication number Publication date
US5094885A (en) 1992-03-10
DE69118085T2 (de) 1996-10-02
EP0480735B1 (de) 1996-03-20
JPH06342760A (ja) 1994-12-13
US5383971A (en) 1995-01-24
EP0480735A1 (de) 1992-04-15

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