DE69106285T2 - Termische Reaktoranlage zur Bearbeitung von Halbleiterscheiben und Betriebsverfahren eines solchem Reaktors. - Google Patents

Termische Reaktoranlage zur Bearbeitung von Halbleiterscheiben und Betriebsverfahren eines solchem Reaktors.

Info

Publication number
DE69106285T2
DE69106285T2 DE69106285T DE69106285T DE69106285T2 DE 69106285 T2 DE69106285 T2 DE 69106285T2 DE 69106285 T DE69106285 T DE 69106285T DE 69106285 T DE69106285 T DE 69106285T DE 69106285 T2 DE69106285 T2 DE 69106285T2
Authority
DE
Germany
Prior art keywords
reactor
semiconductor wafers
processing semiconductor
operating methods
thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69106285T
Other languages
English (en)
Other versions
DE69106285D1 (de
Inventor
David V Adams
Roger N Anderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69106285D1 publication Critical patent/DE69106285D1/de
Application granted granted Critical
Publication of DE69106285T2 publication Critical patent/DE69106285T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
DE69106285T 1990-09-07 1991-09-06 Termische Reaktoranlage zur Bearbeitung von Halbleiterscheiben und Betriebsverfahren eines solchem Reaktors. Expired - Lifetime DE69106285T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/579,741 US5085887A (en) 1990-09-07 1990-09-07 Wafer reactor vessel window with pressure-thermal compensation

Publications (2)

Publication Number Publication Date
DE69106285D1 DE69106285D1 (de) 1995-02-09
DE69106285T2 true DE69106285T2 (de) 1995-08-24

Family

ID=24318154

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69106285T Expired - Lifetime DE69106285T2 (de) 1990-09-07 1991-09-06 Termische Reaktoranlage zur Bearbeitung von Halbleiterscheiben und Betriebsverfahren eines solchem Reaktors.

Country Status (4)

Country Link
US (1) US5085887A (de)
EP (1) EP0474251B1 (de)
JP (1) JPH0789542B2 (de)
DE (1) DE69106285T2 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4132204C2 (de) * 1991-09-27 1999-11-04 Leybold Ag Vorrichtung zur Reduzierung der Durchbiegung von Außenwänden an Vakuumbehältern
US5444217A (en) 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5932286A (en) * 1993-03-16 1999-08-03 Applied Materials, Inc. Deposition of silicon nitride thin films
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
JP3008782B2 (ja) * 1994-07-15 2000-02-14 信越半導体株式会社 気相成長方法およびその装置
US5573566A (en) * 1995-05-26 1996-11-12 Advanced Semiconductor Materials America, Inc. Method of making a quartz dome reactor chamber
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6099648A (en) * 1997-08-06 2000-08-08 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
US6780464B2 (en) * 1997-08-11 2004-08-24 Torrex Equipment Thermal gradient enhanced CVD deposition at low pressure
US6165273A (en) * 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6064799A (en) * 1998-04-30 2000-05-16 Applied Materials, Inc. Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6406543B1 (en) 1998-07-23 2002-06-18 Applied Materials, Inc. Infra-red transparent thermal reactor cover member
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6143079A (en) * 1998-11-19 2000-11-07 Asm America, Inc. Compact process chamber for improved process uniformity
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6163007A (en) * 1999-03-19 2000-12-19 Applied Materials, Inc. Microwave plasma generating apparatus with improved heat protection of sealing O-rings
US6245149B1 (en) * 1999-07-01 2001-06-12 Applied Materials, Inc. Inert barrier for high purity epitaxial deposition systems
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6786935B1 (en) * 2000-03-10 2004-09-07 Applied Materials, Inc. Vacuum processing system for producing components
US6437290B1 (en) * 2000-08-17 2002-08-20 Tokyo Electron Limited Heat treatment apparatus having a thin light-transmitting window
JP4889896B2 (ja) * 2000-11-09 2012-03-07 バッテル メモリアル インスティテュート 多孔質シリカの脱ヒドロキシル化およびアルキル化のための真空／気相反応器
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
JP4157718B2 (ja) * 2002-04-22 2008-10-01 キヤノンアネルバ株式会社 窒化シリコン膜作製方法及び窒化シリコン膜作製装置
JP4619116B2 (ja) * 2002-06-21 2011-01-26 アプライド マテリアルズ インコーポレイテッド 真空処理システムのための搬送チャンバ
US7169233B2 (en) * 2003-11-21 2007-01-30 Asm America, Inc. Reactor chamber
US7021888B2 (en) * 2003-12-16 2006-04-04 Universities Research Association, Inc. Ultra-high speed vacuum pump system with first stage turbofan and second stage turbomolecular pump
US7784164B2 (en) * 2004-06-02 2010-08-31 Applied Materials, Inc. Electronic device manufacturing chamber method
US20060201074A1 (en) * 2004-06-02 2006-09-14 Shinichi Kurita Electronic device manufacturing chamber and methods of forming the same
CN101866828B (zh) * 2004-06-02 2013-03-20 应用材料公司 电子装置制造室及其形成方法
JP4779644B2 (ja) * 2005-12-27 2011-09-28 株式会社Ｓｕｍｃｏ エピタキシャル装置
US8610033B1 (en) * 2007-03-29 2013-12-17 Moore Epitaxial, Inc. Rapid thermal process reactor utilizing a low profile dome
JP2009277785A (ja) * 2008-05-13 2009-11-26 Sumco Corp 半導体製造装置及びこの装置を用いた半導体製造方法
JP5235934B2 (ja) * 2010-04-21 2013-07-10 株式会社日立国際電気 半導体製造装置及び半導体装置の製造方法
SG11201504342SA (en) * 2013-01-16 2015-08-28 Applied Materials Inc Quartz upper and lower domes
US9236283B2 (en) * 2013-03-12 2016-01-12 Tokyo Ohka Kogyo Co., Ltd. Chamber apparatus and heating method
US9322097B2 (en) * 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
JP6096592B2 (ja) * 2013-05-29 2017-03-15 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN105493229B (zh) * 2013-08-19 2019-04-05 应用材料公司 用于杂质分层外延法的设备
US10763082B2 (en) * 2016-03-04 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber of plasma system, liner for plasma system and method for installing liner to plasma system
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
KR102408720B1 (ko) * 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721210A (en) * 1971-04-19 1973-03-20 Texas Instruments Inc Low volume deposition reactor
US4312457A (en) * 1980-02-22 1982-01-26 Corning Glass Works Housing structures for evacuated devices
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
KR0155545B1 (ko) * 1988-06-27 1998-12-01 고다까 토시오 기판의 열처리 장치
US4920918A (en) * 1989-04-18 1990-05-01 Applied Materials, Inc. Pressure-resistant thermal reactor system for semiconductor processing
DE9003609U1 (de) * 1990-03-28 1990-06-28 Herberts Industrieglas Gmbh & Co. Kg, 5600 Wuppertal, De

Also Published As

Publication number Publication date
US5085887A (en) 1992-02-04
DE69106285D1 (de) 1995-02-09
EP0474251A1 (de) 1992-03-11
JPH04245420A (ja) 1992-09-02
JPH0789542B2 (ja) 1995-09-27
EP0474251B1 (de) 1994-12-28

Similar Documents

Publication Publication Date Title
DE69106285T2 (de) Termische Reaktoranlage zur Bearbeitung von Halbleiterscheiben und Betriebsverfahren eines solchem Reaktors.
DE69428618D1 (de) Thermischer Reaktor für Operationen zur Bearbeitung von Halbleiter-Wafer
DE69123508D1 (de) Vorrichtung zur Bearbeitung von Halbleiterscheiben
DE69226253T2 (de) Plasmaätzverfahren und Reaktor zur Plasmabearbeitung
DE69429218D1 (de) Vorrichtung zur schnellen thermischen behandlung zur herstellung von halbleiterwafers
DE69509046D1 (de) Plasmareaktoren zur Behandlung von Halbleiterscheiben
DE69120193T2 (de) Batchverfahren und Vorrichtung zur Behandlung von Halbleiterscheiben
DE69025972T2 (de) Druckbeständige thermische Reaktoranlage für Bearbeitungen von Halbleiterbauteilen
FI935854A0 (fi) Puolijohteen, kuten piikiekon, prosessoinnissa käytettävä laitteisto ja menetelmä
DE69008931T2 (de) Verbindungshalbleitervorrichtung und Methode zu deren Oberflächenbehandlung.
EP0445596A3 (en) Double-dome reactor for semiconductor processing
KR900019192A (ko) 반도체 웨이퍼의 다단 진공처리장치 및 방법
KR880701454A (ko) 반도체 웨이퍼 세정 방법 및 장치
EP0408216A3 (en) Method for processing wafers and producing semiconductor devices and apparatus for producing the same
DE69616098T2 (de) Polyetherketonzusammensetzungen und Träger zur Bearbeitung und Behandlung von Halbleiterscheiben
DE69130987D1 (de) Vorrichtung zur Behandlung von Halbleiter-Plättchen
DE3750789D1 (de) Datenverarbeitungssystem und -verfahren zur direkten und indirekten Ausführung von gleichmässig strukturierten Objekttypen.
DE69115234T2 (de) Verfahren und Vorrichtung zur Handhabung von Wafern.
DE68917131D1 (de) Anordnung zur detektion und behandlung von optischer strahlung.
EP0412537A3 (en) Process and device for the treatment of chemico-mechanical publishing fabrics, particularly for semiconductor wafers
KR900017121A (ko) 패턴오염으로부터 보호되는 반도체장치 및 그의 제조방법
DE69415904D1 (de) Schrittweises Behandlungssystem von Halbleiterplättchen
DE69116033D1 (de) Reaktor zur Behandlung von Halbleiterscheiben.
DE69021952T2 (de) Vorrichtung zur Handhabung von Halbleiterplättchen.
DE69028655D1 (de) Pipelineprozessor und Pipelineverarbeitungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: FIENER, J., PAT.-ANW., 87719 MINDELHEIM