DE69104808T2 - Halbleiterlasersystem mit nichtlinearem Kristallresonator. - Google Patents

Halbleiterlasersystem mit nichtlinearem Kristallresonator.

Info

Publication number
DE69104808T2
DE69104808T2 DE69104808T DE69104808T DE69104808T2 DE 69104808 T2 DE69104808 T2 DE 69104808T2 DE 69104808 T DE69104808 T DE 69104808T DE 69104808 T DE69104808 T DE 69104808T DE 69104808 T2 DE69104808 T2 DE 69104808T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser system
crystal resonator
linear crystal
linear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69104808T
Other languages
English (en)
Other versions
DE69104808D1 (de
Inventor
Wilfried Lenth
William Paul Risk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69104808D1 publication Critical patent/DE69104808D1/de
Publication of DE69104808T2 publication Critical patent/DE69104808T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/353Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3542Multipass arrangements, i.e. arrangements to make light pass multiple times through the same element, e.g. using an enhancement cavity
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/37Non-linear optics for second-harmonic generation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08059Constructional details of the reflector, e.g. shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/081Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/082Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109Frequency multiplication, e.g. harmonic generation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065Mode locking; Mode suppression; Mode selection ; Self pulsating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687Stabilising the frequency of the laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Optical Head (AREA)
DE69104808T 1990-11-13 1991-11-04 Halbleiterlasersystem mit nichtlinearem Kristallresonator. Expired - Fee Related DE69104808T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/612,721 US5038352A (en) 1990-11-13 1990-11-13 Laser system and method using a nonlinear crystal resonator

Publications (2)

Publication Number Publication Date
DE69104808D1 DE69104808D1 (de) 1994-12-01
DE69104808T2 true DE69104808T2 (de) 1995-04-27

Family

ID=24454382

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69104808T Expired - Fee Related DE69104808T2 (de) 1990-11-13 1991-11-04 Halbleiterlasersystem mit nichtlinearem Kristallresonator.

Country Status (4)

Country Link
US (1) US5038352A (de)
EP (1) EP0486192B1 (de)
JP (1) JPH04234739A (de)
DE (1) DE69104808T2 (de)

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JP2689184B2 (ja) * 1990-10-18 1997-12-10 パイオニア株式会社 光波長変換装置
JP2721436B2 (ja) * 1990-11-07 1998-03-04 沖電気工業株式会社 第2高調波発生装置
JP2738785B2 (ja) * 1991-06-27 1998-04-08 三菱電機株式会社 光磁気記録再生装置
US5253259A (en) * 1991-02-07 1993-10-12 Matsushita Electric Industrial Co., Ltd. Frequency doubler and visible laser source having a heater
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US5159487A (en) * 1991-05-29 1992-10-27 Lasen, Inc. Optical parametric oscillator OPO having a variable line narrowed output
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DE69207695T2 (de) * 1991-10-01 1996-07-25 Philips Electronics Nv Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen
US5691830A (en) * 1991-10-11 1997-11-25 International Business Machines Corporation Holographic optical system including waveplate and aliasing suppression filter
US5195104A (en) * 1991-10-15 1993-03-16 Lasen, Inc. Internally stimulated optical parametric oscillator/laser
ATE156623T1 (de) * 1991-12-30 1997-08-15 Philips Electronics Nv Einrichtung, in der frequenzerhöhung von elektromagnetischer strahlung auftritt, und eine solche einrichtung enthaltendes gerät zum optischen abtasten einer informationsebene
US5231641A (en) * 1992-01-21 1993-07-27 Laserscope Crystalline slab laser with intracavity non-linear optic
US5408481A (en) * 1992-10-26 1995-04-18 The United States Of America As Represented By The Secretary Of The Navy Intracavity sum frequency generation using a tunable laser containing an active mirror
US5412674A (en) * 1992-10-26 1995-05-02 The United States Of America As Represented By The Secretary Of The Navy Compact rapidly modulatable diode-pumped visible laser
US5333142A (en) * 1992-10-26 1994-07-26 The United States Of America As Represented By The Secretary Of The Navy Technique for intracavity sum frequency generation
US5394414A (en) * 1993-05-28 1995-02-28 International Business Machines Corporation Laser system and method having a nonlinear crystal resonator
US5414724A (en) * 1994-01-19 1995-05-09 North China Research Institute Of Electro-Optics Monolithic self Q-switched laser
US5432610A (en) * 1994-04-15 1995-07-11 Hewlett-Packard Company Diode-pumped power build-up cavity for chemical sensing
DE4416607C2 (de) * 1994-05-11 1997-09-04 Klaus Reimann Vorrichtung zur Verdopplung der Laserfrequenz einer Halbleiterlaserdiode
JP2892938B2 (ja) * 1994-06-20 1999-05-17 インターナショナル・ビジネス・マシーンズ・コーポレイション 波長変換装置
FR2722307B1 (fr) * 1994-07-05 1996-08-14 Thomson Csf Source optique compacte, basee sur le doublage de frequence d'un laser
US5555253A (en) * 1995-01-09 1996-09-10 Amoco Corporation Technique for locking a laser diode to a passive cavity
US5572542A (en) * 1995-04-13 1996-11-05 Amoco Corporation Technique for locking an external cavity large-area laser diode to a passive optical cavity
US5825793A (en) * 1995-06-05 1998-10-20 Hitachi Metals, Ltd. Laser and laser applied units
US5633724A (en) * 1995-08-29 1997-05-27 Hewlett-Packard Company Evanescent scanning of biochemical array
US5610934A (en) * 1995-10-13 1997-03-11 Polaroid Corporation Miniaturized intracavity frequency-doubled blue laser
US5642375A (en) * 1995-10-26 1997-06-24 Hewlett-Packard Company Passively-locked external optical cavity
US5684623A (en) * 1996-03-20 1997-11-04 Hewlett Packard Company Narrow-band tunable optical source
DE69725815T2 (de) * 1996-09-05 2004-08-12 Oki Electric Industry Co., Ltd. Wellenlängenumwandlungsvorrichtung mit verbessertem Wirkungsgrad, einfacher Justierbarkeit und Polarisationsunempfindlichkeit
US5835522A (en) * 1996-11-19 1998-11-10 Hewlett-Packard Co. Robust passively-locked optical cavity system
US6215800B1 (en) 1998-01-14 2001-04-10 Northrop Grumman Corporation Optical parametric oscillator with dynamic output coupler
US6167067A (en) * 1998-04-03 2000-12-26 Northrop Grumman Corporation Optical parametric oscillator with monolithic dual PPLN elements with intrinsic mirrors
JP2000214506A (ja) * 1998-11-03 2000-08-04 Toshiba Research Europe Ltd 放射光線源及び撮像システム
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DE1055925T1 (de) * 1999-05-28 2001-06-07 Yokogawa Electric Corp Biochip-Lesegerät und Elektrophoresesystem
US6282014B1 (en) 1999-06-09 2001-08-28 Northrop Grumman Corporation Cascade optical parametric oscillator for down-conversion
US6795459B2 (en) * 2000-10-18 2004-09-21 Fibera, Inc. Light frequency locker
US6763042B2 (en) * 2001-12-14 2004-07-13 Evans & Sutherland Computer Corporation Apparatus and method for frequency conversion and mixing of laser light
US6798800B2 (en) * 2002-12-30 2004-09-28 Intel Corporation Method and apparatus to sense temperature of thermal tuning elements in tunable optical devices
US7218655B2 (en) * 2004-10-08 2007-05-15 B&W Tek Property, Inc. Solid state laser insensitive to temperature changes
EP1840978A4 (de) * 2005-01-17 2014-06-25 Anritsu Corp Optisches halbleiterelement mit breiten lichtspektrumemissionseigenschaften, herstellungsverfahren dafür und halbleiterlaser des typs mit externem resonator
US20060165137A1 (en) * 2005-01-21 2006-07-27 Alexander Kachanov Novel external cavity CW frequency doubling of semiconductor lasers to generate 300-600nm light
CN100463310C (zh) * 2005-03-30 2009-02-18 三菱电机株式会社 模式控制波导型激光装置
US7830931B2 (en) * 2005-06-02 2010-11-09 Stc Inc. Semiconductor laser excitation solid laser device and an image formation device having the same
US7891818B2 (en) 2006-12-12 2011-02-22 Evans & Sutherland Computer Corporation System and method for aligning RGB light in a single modulator projector
US20090103576A1 (en) * 2007-10-17 2009-04-23 Martin Achtenhagen System and Method of Providing Second Harmonic Generation (SHG) Light in a Single Pass
US20090168814A1 (en) * 2008-01-02 2009-07-02 Martin Achtenhagen Second Harmonic Generation Laser System
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US8493649B2 (en) 2008-10-23 2013-07-23 Bae Systems Information And Electronic Systems Integration Inc. Method of producing nonlinear optical crystal CdSiP2
US8379296B2 (en) * 2008-10-23 2013-02-19 Bae Systems Information And Electronic Systems Integration Inc. Nonlinear optical CdSiP2 crystal and producing method and devices therefrom
US8077378B1 (en) 2008-11-12 2011-12-13 Evans & Sutherland Computer Corporation Calibration system and method for light modulation device
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Also Published As

Publication number Publication date
EP0486192A3 (en) 1992-07-08
EP0486192A2 (de) 1992-05-20
EP0486192B1 (de) 1994-10-26
DE69104808D1 (de) 1994-12-01
JPH04234739A (ja) 1992-08-24
US5038352A (en) 1991-08-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee