DE69101417T2 - Spannungsgesteuerter Oszillator. - Google Patents
Spannungsgesteuerter Oszillator.Info
- Publication number
- DE69101417T2 DE69101417T2 DE69101417T DE69101417T DE69101417T2 DE 69101417 T2 DE69101417 T2 DE 69101417T2 DE 69101417 T DE69101417 T DE 69101417T DE 69101417 T DE69101417 T DE 69101417T DE 69101417 T2 DE69101417 T2 DE 69101417T2
- Authority
- DE
- Germany
- Prior art keywords
- controlled oscillator
- voltage controlled
- voltage
- oscillator
- controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1864—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator
- H03B5/187—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device
- H03B5/1876—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0014—Structural aspects of oscillators
- H03B2200/0024—Structural aspects of oscillators including parallel striplines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0062—Bias and operating point
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2202/00—Aspects of oscillators relating to reduction of undesired oscillations
- H03B2202/02—Reduction of undesired oscillations originated from natural noise of the circuit elements of the oscillator
- H03B2202/025—Reduction of undesired oscillations originated from natural noise of the circuit elements of the oscillator the noise being coloured noise, i.e. frequency dependent noise
- H03B2202/027—Reduction of undesired oscillations originated from natural noise of the circuit elements of the oscillator the noise being coloured noise, i.e. frequency dependent noise the noise being essentially proportional to the inverse of the frequency, i.e. the so-called 1/f noise
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2202/00—Aspects of oscillators relating to reduction of undesired oscillations
- H03B2202/07—Reduction of undesired oscillations through a cancelling of the undesired oscillation
- H03B2202/076—Reduction of undesired oscillations through a cancelling of the undesired oscillation by using a feedback loop external to the oscillator, e.g. the so-called noise degeneration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
- H03B5/1852—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2239625A JP2847573B2 (ja) | 1990-09-10 | 1990-09-10 | 電圧制御発振器 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69101417D1 DE69101417D1 (de) | 1994-04-21 |
DE69101417T2 true DE69101417T2 (de) | 1994-07-14 |
Family
ID=17047507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69101417T Expired - Fee Related DE69101417T2 (de) | 1990-09-10 | 1991-09-04 | Spannungsgesteuerter Oszillator. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5130675A (de) |
EP (1) | EP0475262B1 (de) |
JP (1) | JP2847573B2 (de) |
DE (1) | DE69101417T2 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5233319A (en) * | 1992-03-27 | 1993-08-03 | The United States Of America As Represented By The Secretary Of The Army | Low-cost, low-noise, temperature-stable, tunable dielectric resonator oscillator |
US5473287A (en) * | 1994-11-14 | 1995-12-05 | Micronetics, Inc. | Electronic oscillator with transmission line tuning of phase noise and linearity |
US5748049A (en) * | 1994-11-23 | 1998-05-05 | Anadigics, Inc. | Multi-frequency local oscillators |
US5568096A (en) * | 1995-04-19 | 1996-10-22 | Telefonaktiebolaget Lm Ericsson | Apparatus and method for using negative FM feedback in high quality oscillator devices |
IT1277202B1 (it) * | 1995-06-30 | 1997-11-05 | Sits Soc It Telecom Siemens | Procedimento di stabilizzazione automatica della frequenza di oscillatore locale in radioricevitori impieganti un oscillatore |
US5821827A (en) * | 1996-12-18 | 1998-10-13 | Endgate Corporation | Coplanar oscillator circuit structures |
JPH10256905A (ja) * | 1997-03-14 | 1998-09-25 | Toshiba Corp | 位相同期回路装置 |
US6064276A (en) * | 1998-06-16 | 2000-05-16 | Microware Solutions Limited | Oscillator circuit |
GB2338617A (en) * | 1998-06-16 | 1999-12-22 | Microwave Solutions Limited | A voltage controlled oscillator with a dielectric resonator and a Schottky variable capacitance diode |
JP3661573B2 (ja) * | 2000-07-24 | 2005-06-15 | 株式会社村田製作所 | 電圧制御発振器、電圧制御発振器装置およびレーダ装置 |
US8749054B2 (en) | 2010-06-24 | 2014-06-10 | L. Pierre de Rochemont | Semiconductor carrier with vertical power FET module |
JP4046567B2 (ja) * | 2002-07-29 | 2008-02-13 | 富士通テン株式会社 | 移動体検知装置 |
FR2849725A1 (fr) * | 2003-01-06 | 2004-07-09 | Thomson Licensing Sa | Oscillateur a resonateur dielectrique commande en tension |
EP1505720B1 (de) * | 2003-08-06 | 2018-07-18 | Synergy Microwave Corporation | Frequenzstimmbareroszillator mit niedrigem Phasenrauschen und niedriger Temperaturabweichung |
US7088189B2 (en) | 2003-09-09 | 2006-08-08 | Synergy Microwave Corporation | Integrated low noise microwave wideband push-push VCO |
US7292113B2 (en) | 2003-09-09 | 2007-11-06 | Synergy Microwave Corporation | Multi-octave band tunable coupled-resonator oscillator |
JP4939228B2 (ja) * | 2003-12-09 | 2012-05-23 | シナジー マイクロウェーブ コーポレーション | 熱ドリフトがユーザ指定可能な電圧制御発振器 |
US7262670B2 (en) | 2003-12-09 | 2007-08-28 | Synergy Microwave Corporation | Low thermal drift, tunable frequency voltage controlled oscillator |
WO2005107058A2 (en) | 2004-04-21 | 2005-11-10 | Synergy Microwave Corporation | Wideband voltage controlled oscillator employing evanescent mode coupled-resonators |
EP1619789B1 (de) * | 2004-07-19 | 2019-09-11 | Synergy Microwave Corporation | Frequenzstimmbarer Oszillator mit niedriger Temperaturabweichung |
CA2515982C (en) | 2004-08-16 | 2008-07-22 | Synergy Microwave Corporation | Low noise, hybrid tuned wideband voltage controlled oscillator |
US7405698B2 (en) | 2004-10-01 | 2008-07-29 | De Rochemont L Pierre | Ceramic antenna module and methods of manufacture thereof |
CA2608203C (en) | 2005-05-20 | 2012-09-18 | Synergy Microwave Corporation | Tunable oscillator having series and parallel tuned resonant circuits |
CN101213638B (zh) | 2005-06-30 | 2011-07-06 | L·皮尔·德罗什蒙 | 电子元件及制造方法 |
CA2566283C (en) | 2005-11-02 | 2011-10-18 | Synergy Microwave Corporation | User-definable, low cost, low phase hit and spectrally pure tunable oscillator |
JP5568207B2 (ja) | 2005-11-15 | 2014-08-06 | シナジー マイクロウェーブ コーポレーション | ユーザ指定可能、低コスト、低ノイズであり、位相跳躍に影響されにくいマルチオクターブ帯域チューナブル発振器 |
US8354294B2 (en) | 2006-01-24 | 2013-01-15 | De Rochemont L Pierre | Liquid chemical deposition apparatus and process and products therefrom |
US7959598B2 (en) | 2008-08-20 | 2011-06-14 | Asante Solutions, Inc. | Infusion pump systems and methods |
US8952858B2 (en) | 2009-06-17 | 2015-02-10 | L. Pierre de Rochemont | Frequency-selective dipole antennas |
US8922347B1 (en) | 2009-06-17 | 2014-12-30 | L. Pierre de Rochemont | R.F. energy collection circuit for wireless devices |
US8552708B2 (en) | 2010-06-02 | 2013-10-08 | L. Pierre de Rochemont | Monolithic DC/DC power management module with surface FET |
US9023493B2 (en) | 2010-07-13 | 2015-05-05 | L. Pierre de Rochemont | Chemically complex ablative max-phase material and method of manufacture |
WO2012027412A1 (en) * | 2010-08-23 | 2012-03-01 | De Rochemont L Pierre | Power fet with a resonant transistor gate |
US9123768B2 (en) | 2010-11-03 | 2015-09-01 | L. Pierre de Rochemont | Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof |
TW201401762A (zh) * | 2012-06-27 | 2014-01-01 | Yong-Sheng Huang | 降低振盪器相位雜訊的電路 |
US10275573B2 (en) | 2016-01-13 | 2019-04-30 | Bigfoot Biomedical, Inc. | User interface for diabetes management system |
EP3453414A1 (de) | 2016-01-14 | 2019-03-13 | Bigfoot Biomedical, Inc. | Anpassung von insulinabgaberaten |
CN110089026B (zh) * | 2016-12-22 | 2023-06-09 | 楼氏卡泽诺维亚公司 | 微波腔体谐振器稳定振荡器和及其实现方法 |
EP3568859A1 (de) | 2017-01-13 | 2019-11-20 | Bigfoot Biomedical, Inc. | Insulinverabreichungsverfahren, -systeme und -vorrichtungen |
USD874471S1 (en) | 2017-06-08 | 2020-02-04 | Insulet Corporation | Display screen with a graphical user interface |
USD928199S1 (en) | 2018-04-02 | 2021-08-17 | Bigfoot Biomedical, Inc. | Medication delivery device with icons |
USD920343S1 (en) | 2019-01-09 | 2021-05-25 | Bigfoot Biomedical, Inc. | Display screen or portion thereof with graphical user interface associated with insulin delivery |
USD977502S1 (en) | 2020-06-09 | 2023-02-07 | Insulet Corporation | Display screen with graphical user interface |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4630004A (en) * | 1985-04-11 | 1986-12-16 | The United States Of America As Represented By The Secretary Of The Air Force | Dielectric resonator stabilized microstrip oscillator |
FR2595518A1 (fr) * | 1986-03-07 | 1987-09-11 | Thomson Csf | Oscillateur a faible bruit aux environs de sa frequence d'oscillation |
-
1990
- 1990-09-10 JP JP2239625A patent/JP2847573B2/ja not_active Expired - Lifetime
-
1991
- 1991-09-04 US US07/754,826 patent/US5130675A/en not_active Expired - Fee Related
- 1991-09-04 EP EP91114919A patent/EP0475262B1/de not_active Expired - Lifetime
- 1991-09-04 DE DE69101417T patent/DE69101417T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69101417D1 (de) | 1994-04-21 |
US5130675A (en) | 1992-07-14 |
EP0475262A1 (de) | 1992-03-18 |
JPH04119705A (ja) | 1992-04-21 |
JP2847573B2 (ja) | 1999-01-20 |
EP0475262B1 (de) | 1994-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |