DE69033746D1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE69033746D1
DE69033746D1 DE69033746T DE69033746T DE69033746D1 DE 69033746 D1 DE69033746 D1 DE 69033746D1 DE 69033746 T DE69033746 T DE 69033746T DE 69033746 T DE69033746 T DE 69033746T DE 69033746 D1 DE69033746 D1 DE 69033746D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033746T
Other languages
English (en)
Other versions
DE69033746T2 (de
Inventor
Masayoshi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1324996A external-priority patent/JP2876665B2/ja
Priority claimed from JP1342708A external-priority patent/JP2876673B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69033746D1 publication Critical patent/DE69033746D1/de
Publication of DE69033746T2 publication Critical patent/DE69033746T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
DE69033746T 1989-12-15 1990-12-12 Halbleiterspeicher Expired - Fee Related DE69033746T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1324996A JP2876665B2 (ja) 1989-12-15 1989-12-15 半導体メモリ
JP1342708A JP2876673B2 (ja) 1989-12-28 1989-12-28 半導体メモリ

Publications (2)

Publication Number Publication Date
DE69033746D1 true DE69033746D1 (de) 2001-07-12
DE69033746T2 DE69033746T2 (de) 2002-02-28

Family

ID=26571688

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69033746T Expired - Fee Related DE69033746T2 (de) 1989-12-15 1990-12-12 Halbleiterspeicher
DE69025304T Expired - Fee Related DE69025304T2 (de) 1989-12-15 1990-12-12 Halbleiterspeicher

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69025304T Expired - Fee Related DE69025304T2 (de) 1989-12-15 1990-12-12 Halbleiterspeicher

Country Status (3)

Country Link
US (1) US5241495A (de)
EP (2) EP0436323B1 (de)
DE (2) DE69033746T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243203A (en) * 1991-11-04 1993-09-07 Motorola, Inc. Compact transistor pair layout and method thereof
US5404326A (en) * 1992-06-30 1995-04-04 Sony Corporation Static random access memory cell structure having a thin film transistor load
JPH06169071A (ja) * 1992-11-30 1994-06-14 Fujitsu Ltd 半導体記憶装置
JPH06275795A (ja) * 1993-03-19 1994-09-30 Fujitsu Ltd 半導体記憶装置
JP3179937B2 (ja) * 1993-05-01 2001-06-25 株式会社東芝 半導体装置
JP3179368B2 (ja) * 1997-05-30 2001-06-25 広島日本電気株式会社 スタティック型メモリセル
US8356987B2 (en) 2007-09-11 2013-01-22 Emerson Climate Technologies, Inc. Compressor with retaining mechanism

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644194A (en) * 1979-09-19 1981-04-23 Toshiba Corp Memory device
JPS6046545B2 (ja) * 1980-05-16 1985-10-16 日本電気株式会社 相補型ｍｏｓ記憶回路装置
DE3380548D1 (en) * 1982-03-03 1989-10-12 Fujitsu Ltd A semiconductor memory device
US4554644A (en) * 1982-06-21 1985-11-19 Fairchild Camera & Instrument Corporation Static RAM cell
DE3235880A1 (de) * 1982-09-28 1984-04-05 Siemens AG, 1000 Berlin und 8000 München Statische speicherzelle in zwei-kanal-technik
JPH07112014B2 (ja) * 1986-07-09 1995-11-29 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
US5241495A (en) 1993-08-31
EP0436323B1 (de) 1996-02-07
DE69025304T2 (de) 1996-07-04
DE69025304D1 (de) 1996-03-21
DE69033746T2 (de) 2002-02-28
EP0644552A2 (de) 1995-03-22
EP0436323A2 (de) 1991-07-10
EP0436323A3 (en) 1993-03-24
EP0644552B1 (de) 2001-06-06
EP0644552A3 (de) 1995-09-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee