DE69033424T2 - Verfahren zum Herstellen einer Schutzsperre aus Silicidzonen - Google Patents

Verfahren zum Herstellen einer Schutzsperre aus Silicidzonen

Info

Publication number
DE69033424T2
DE69033424T2 DE69033424T DE69033424T DE69033424T2 DE 69033424 T2 DE69033424 T2 DE 69033424T2 DE 69033424 T DE69033424 T DE 69033424T DE 69033424 T DE69033424 T DE 69033424T DE 69033424 T2 DE69033424 T2 DE 69033424T2
Authority
DE
Germany
Prior art keywords
making
protective barrier
silicide zones
silicide
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033424T
Other languages
English (en)
Other versions
DE69033424D1 (de
Inventor
David B Spratt
Robert H Eklund
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69033424D1 publication Critical patent/DE69033424D1/de
Publication of DE69033424T2 publication Critical patent/DE69033424T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
DE69033424T 1989-09-11 1990-08-23 Verfahren zum Herstellen einer Schutzsperre aus Silicidzonen Expired - Fee Related DE69033424T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40570389A 1989-09-11 1989-09-11

Publications (2)

Publication Number Publication Date
DE69033424D1 DE69033424D1 (de) 2000-02-24
DE69033424T2 true DE69033424T2 (de) 2000-06-21

Family

ID=23604855

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033424T Expired - Fee Related DE69033424T2 (de) 1989-09-11 1990-08-23 Verfahren zum Herstellen einer Schutzsperre aus Silicidzonen

Country Status (4)

Country Link
EP (1) EP0417522B1 (de)
JP (1) JP3161718B2 (de)
KR (1) KR100206683B1 (de)
DE (1) DE69033424T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10208728B4 (de) 2002-02-28 2009-05-07 Advanced Micro Devices, Inc., Sunnyvale Ein Verfahren zur Herstellung eines Halbleiterelements mit unterschiedlichen Metallsilizidbereichen
DE10208904B4 (de) 2002-02-28 2007-03-01 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung unterschiedlicher Silicidbereiche auf verschiedenen Silicium enthaltenden Gebieten in einem Halbleiterelement
DE10209059B4 (de) 2002-03-01 2007-04-05 Advanced Micro Devices, Inc., Sunnyvale Ein Halbleiterelement mit unterschiedlichen Metall-Halbleiterbereichen, die auf einem Halbleitergebiet gebildet sind, und Verfahren zur Herstellung des Halbleiterelements
DE10234931A1 (de) 2002-07-31 2004-02-26 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines Metallsilizidgates in einer standardmässigen MOS-Prozesssequenz
US6815235B1 (en) 2002-11-25 2004-11-09 Advanced Micro Devices, Inc. Methods of controlling formation of metal silicide regions, and system for performing same
JP4247257B2 (ja) * 2006-08-29 2009-04-02 株式会社東芝 半導体装置の製造方法
CN105990116A (zh) 2015-02-03 2016-10-05 联华电子股份有限公司 一种制作半导体元件的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
JPS5863165A (ja) * 1981-10-09 1983-04-14 Toshiba Corp 多層電極構造を有した半導体装置
FR2624304B1 (fr) * 1987-12-04 1990-05-04 Philips Nv Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium

Also Published As

Publication number Publication date
EP0417522A2 (de) 1991-03-20
KR910007106A (ko) 1991-04-30
KR100206683B1 (ko) 1999-07-01
EP0417522A3 (en) 1992-09-02
EP0417522B1 (de) 2000-01-19
DE69033424D1 (de) 2000-02-24
JP3161718B2 (ja) 2001-04-25
JPH03171622A (ja) 1991-07-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee