DE69031459D1 - Verfahren zur Herstellung eines Sensors aus amorphem Silizium - Google Patents

Verfahren zur Herstellung eines Sensors aus amorphem Silizium

Info

Publication number
DE69031459D1
DE69031459D1 DE69031459T DE69031459T DE69031459D1 DE 69031459 D1 DE69031459 D1 DE 69031459D1 DE 69031459 T DE69031459 T DE 69031459T DE 69031459 T DE69031459 T DE 69031459T DE 69031459 D1 DE69031459 D1 DE 69031459D1
Authority
DE
Germany
Prior art keywords
producing
amorphous silicon
silicon sensor
sensor
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031459T
Other languages
English (en)
Other versions
DE69031459T2 (de
Inventor
Nang Tri Tran
Franco Antonio Mori
William Charles Tait
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Co
Original Assignee
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining and Manufacturing Co filed Critical Minnesota Mining and Manufacturing Co
Publication of DE69031459D1 publication Critical patent/DE69031459D1/de
Application granted granted Critical
Publication of DE69031459T2 publication Critical patent/DE69031459T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69031459T 1989-12-28 1990-12-14 Verfahren zur Herstellung eines Sensors aus amorphem Silizium Expired - Fee Related DE69031459T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45828889A 1989-12-28 1989-12-28

Publications (2)

Publication Number Publication Date
DE69031459D1 true DE69031459D1 (de) 1997-10-23
DE69031459T2 DE69031459T2 (de) 1998-03-19

Family

ID=23820182

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031459T Expired - Fee Related DE69031459T2 (de) 1989-12-28 1990-12-14 Verfahren zur Herstellung eines Sensors aus amorphem Silizium

Country Status (7)

Country Link
US (1) US5291036A (de)
EP (1) EP0438889B1 (de)
JP (1) JPH04251988A (de)
KR (1) KR910013595A (de)
CA (1) CA2031628A1 (de)
DE (1) DE69031459T2 (de)
IL (1) IL96561A0 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4125929A1 (de) * 1991-08-05 1993-02-11 Siemens Ag Strahlungsdetektor
US5449923A (en) * 1992-03-31 1995-09-12 Industrial Technology Research Institute Amorphous silicon color detector
US5556716A (en) * 1994-08-25 1996-09-17 E. I. Du Pont De Nemours And Company X-ray photoconductive compositions for x-ray radiography
KR100214267B1 (ko) * 1995-04-07 1999-08-02 김영환 반도체 소자 제조방법
US5989652A (en) * 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
US6057587A (en) * 1997-08-28 2000-05-02 Vlsi Technology, Inc. Semiconductor device with anti-reflective structure
EP1364413A1 (de) * 2001-03-01 2003-11-26 STMicroelectronics N.V. Optoelektronisches bauelement
US7671342B2 (en) * 2005-01-11 2010-03-02 Siemens Medical Solutions Usa, Inc. Multi-layer detector and method for imaging
DE102005019259A1 (de) * 2005-04-26 2006-11-09 Giesecke & Devrient Gmbh Vorrichtung zur Untersuchung von Dokumenten
CN100437221C (zh) * 2005-10-14 2008-11-26 群康科技(深圳)有限公司 液晶显示装置及其制造方法
CN100461435C (zh) * 2006-09-11 2009-02-11 中国科学院上海技术物理研究所 甚长波碲镉汞红外焦平面探测器的抗反膜及制备方法
US7482646B2 (en) * 2006-10-18 2009-01-27 Hejian Technology (Suzhou) Co., Ltd. Image sensor
KR100998618B1 (ko) * 2007-06-29 2010-12-07 (주)넥센나노텍 탄소 나노 섬유를 혼성화시킨 실리콘계 리튬 이차전지용음극 활물질
DE102007053307A1 (de) 2007-11-08 2009-05-14 Robert Bosch Gmbh Kamera zur Erfassung eines Fahrzeugumfeldes
KR20120042301A (ko) * 2010-10-25 2012-05-03 삼성전자주식회사 반도체 장치의 제조방법
CN104334767B (zh) 2012-03-05 2017-06-09 第一太阳能有限公司 利用氢形成透明导电氧化物的方法和设备
TWI545788B (zh) 2014-10-03 2016-08-11 財團法人工業技術研究院 板材與模組結構

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011454A (en) * 1975-04-28 1977-03-08 General Electric Company Structured X-ray phosphor screen
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4096387A (en) * 1976-12-09 1978-06-20 Rca Corporation Ultraviolet radiation detector
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
DE3280418T2 (de) * 1981-07-17 1993-03-04 Kanegafuchi Chemical Ind Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium.
FR2523371A1 (fr) * 1982-03-10 1983-09-16 Contellec Michel Le Element photoconducteur en carbure de silicium amorphe hydrogene et cellule de retine video utilisant un tel element
US4607164A (en) * 1982-07-28 1986-08-19 Hitachi, Ltd. Radiation detecting apparatus
JPS59110179A (ja) * 1982-12-16 1984-06-26 Hitachi Ltd 半導体装置およびその製造法
JPS60230132A (ja) * 1984-04-27 1985-11-15 Fuji Photo Film Co Ltd 放射線画像情報読取装置
US4672454A (en) * 1984-05-04 1987-06-09 Energy Conversion Devices, Inc. X-ray image scanner and method
US4660095A (en) * 1984-05-04 1987-04-21 Energy Conversion Devices, Inc. Contact-type document scanner and method
EP0163956A3 (de) * 1984-05-04 1988-04-06 Energy Conversion Devices, Inc. Integrierte strahlungsempfindliche Matrix
FR2575602B1 (fr) * 1984-12-27 1987-01-30 Thomson Csf Dispositif photosensible de grand format, et procede d'utilisation
JPS61196572A (ja) * 1985-02-25 1986-08-30 Hitachi Zosen Corp アモルフアスシリコンｘ線センサ
JPS61196571A (ja) * 1985-02-25 1986-08-30 Hitachi Zosen Corp アモルフアスシリコンｘ線センサ
JPH06101576B2 (ja) * 1985-02-25 1994-12-12 日立造船株式会社 アモルフアスシリコンｘ線センサ
JPS61196570A (ja) * 1985-02-25 1986-08-30 Hitachi Zosen Corp アモルフアスシリコンｘ線センサ
US4785186A (en) * 1986-10-21 1988-11-15 Xerox Corporation Amorphous silicon ionizing particle detectors
US4811069A (en) * 1987-02-23 1989-03-07 Oki Electric Industry Co., Ltd. Photoelectric conversion device
JP2696860B2 (ja) * 1987-11-11 1998-01-14 株式会社日立製作所 放射線検出素子

Also Published As

Publication number Publication date
JPH04251988A (ja) 1992-09-08
US5291036A (en) 1994-03-01
EP0438889A1 (de) 1991-07-31
CA2031628A1 (en) 1991-06-29
KR910013595A (ko) 1991-08-08
EP0438889B1 (de) 1997-09-17
IL96561A0 (en) 1991-09-16
DE69031459T2 (de) 1998-03-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee