DE69030743D1 - Verfahren zur Herstellung eines Halbleiterbauelements mit einem Kontaktteil - Google Patents

Verfahren zur Herstellung eines Halbleiterbauelements mit einem Kontaktteil

Info

Publication number
DE69030743D1
DE69030743D1 DE69030743T DE69030743T DE69030743D1 DE 69030743 D1 DE69030743 D1 DE 69030743D1 DE 69030743 T DE69030743 T DE 69030743T DE 69030743 T DE69030743 T DE 69030743T DE 69030743 D1 DE69030743 D1 DE 69030743D1
Authority
DE
Germany
Prior art keywords
producing
contact part
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030743T
Other languages
English (en)
Other versions
DE69030743T2 (de
Inventor
Songsu Cho
Shinichi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69030743D1 publication Critical patent/DE69030743D1/de
Application granted granted Critical
Publication of DE69030743T2 publication Critical patent/DE69030743T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
DE1990630743 1989-01-31 1990-01-17 Verfahren zur Herstellung eines Halbleiterbauelements mit einem Kontaktteil Expired - Fee Related DE69030743T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1021807A JPH02202054A (ja) 1989-01-31 1989-01-31 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69030743D1 true DE69030743D1 (de) 1997-06-26
DE69030743T2 DE69030743T2 (de) 1997-11-13

Family

ID=12065325

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990630743 Expired - Fee Related DE69030743T2 (de) 1989-01-31 1990-01-17 Verfahren zur Herstellung eines Halbleiterbauelements mit einem Kontaktteil

Country Status (3)

Country Link
EP (1) EP0380964B1 (de)
JP (1) JPH02202054A (de)
DE (1) DE69030743T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9219268D0 (en) * 1992-09-11 1992-10-28 Inmos Ltd Semiconductor device incorporating a contact and manufacture thereof
JP3256048B2 (ja) * 1993-09-20 2002-02-12 富士通株式会社 半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59220952A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 半導体装置の製造方法
ATE80750T1 (de) * 1986-12-17 1992-10-15 Advanced Micro Devices Inc Aneinandergefuegte kontaktstruktur mit vermindertem flaechenbedarf.

Also Published As

Publication number Publication date
EP0380964A3 (de) 1991-03-13
EP0380964A2 (de) 1990-08-08
EP0380964B1 (de) 1997-05-21
DE69030743T2 (de) 1997-11-13
JPH02202054A (ja) 1990-08-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee