DE69025844T2 - Ausgangsschaltung mit bipolaren Transistoren im Ausgang, zur Verwendung in einem MOS-IC - Google Patents

Ausgangsschaltung mit bipolaren Transistoren im Ausgang, zur Verwendung in einem MOS-IC

Info

Publication number
DE69025844T2
DE69025844T2 DE69025844T DE69025844T DE69025844T2 DE 69025844 T2 DE69025844 T2 DE 69025844T2 DE 69025844 T DE69025844 T DE 69025844T DE 69025844 T DE69025844 T DE 69025844T DE 69025844 T2 DE69025844 T2 DE 69025844T2
Authority
DE
Germany
Prior art keywords
output
mos
bipolar transistors
output circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69025844T
Other languages
English (en)
Other versions
DE69025844D1 (de
Inventor
Masaji Ueno
Kumi Ofusa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69025844D1 publication Critical patent/DE69025844D1/de
Publication of DE69025844T2 publication Critical patent/DE69025844T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00353—Modifications for eliminating interference or parasitic voltages or currents in bipolar transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE69025844T 1989-10-06 1990-10-05 Ausgangsschaltung mit bipolaren Transistoren im Ausgang, zur Verwendung in einem MOS-IC Expired - Fee Related DE69025844T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1261577A JPH0683058B2 (ja) 1989-10-06 1989-10-06 出力回路

Publications (2)

Publication Number Publication Date
DE69025844D1 DE69025844D1 (de) 1996-04-18
DE69025844T2 true DE69025844T2 (de) 1996-08-22

Family

ID=17363852

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69025844T Expired - Fee Related DE69025844T2 (de) 1989-10-06 1990-10-05 Ausgangsschaltung mit bipolaren Transistoren im Ausgang, zur Verwendung in einem MOS-IC

Country Status (5)

Country Link
US (1) US5066875A (de)
EP (1) EP0421448B1 (de)
JP (1) JPH0683058B2 (de)
KR (1) KR930007560B1 (de)
DE (1) DE69025844T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2978302B2 (ja) * 1991-01-28 1999-11-15 三菱電機株式会社 出力バッファ回路
US5331224A (en) * 1992-08-19 1994-07-19 National Semiconductor Corporation Icct leakage current interrupter
US5534811A (en) * 1993-06-18 1996-07-09 Digital Equipment Corporation Integrated I/O bus circuit protection for multiple-driven system bus signals
US5748022A (en) * 1995-10-31 1998-05-05 Texas Instruments Incorporated Input circuit
US6300815B1 (en) * 2000-01-31 2001-10-09 Texas Instruments Incorporated Voltage reference overshoot protection circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0433271A3 (en) * 1985-07-22 1991-11-06 Hitachi, Ltd. Semiconductor device
JPS62221219A (ja) * 1986-03-22 1987-09-29 Toshiba Corp 論理回路
JPS63202126A (ja) * 1987-02-17 1988-08-22 Toshiba Corp 論理回路
US4933574A (en) * 1989-01-30 1990-06-12 Integrated Device Technology, Inc. BiCMOS output driver
EP0387461A1 (de) * 1989-03-14 1990-09-19 International Business Machines Corporation BICMOS-Schaltung mit vollem Spannungshub für logische Signale

Also Published As

Publication number Publication date
EP0421448B1 (de) 1996-03-13
KR910008959A (ko) 1991-05-31
US5066875A (en) 1991-11-19
JPH03123220A (ja) 1991-05-27
EP0421448A3 (en) 1991-08-14
JPH0683058B2 (ja) 1994-10-19
DE69025844D1 (de) 1996-04-18
EP0421448A2 (de) 1991-04-10
KR930007560B1 (ko) 1993-08-12

Similar Documents

Publication Publication Date Title
DE69003321D1 (de) MOS-integrierte Schaltung mit regelbarer Schwellspannung.
DE398605T1 (de) Integrierter schaltungschip mit metallzwischenverbindungen.
DE3886378D1 (de) Integrierte schaltungszelle mit grube.
DE69101386D1 (de) Strommess-Schaltung in einem MOS-Leistungstransistor.
DE3750674D1 (de) Halbleiterintegrierte Schaltung mit Prüffunktion.
NO873670D0 (no) Integrert krets til bruk i forbindelse med produksjonsprosesser.
DE3773078D1 (de) Integrierte halbleiterschaltung mit testschaltung.
DE69014176D1 (de) Schneideeinsatz mit Spanerzeuger.
DE3786273D1 (de) Vorrichtung zur bestueckung mit chips.
DE69020316D1 (de) MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor.
DE69016509D1 (de) Integrierte Halbleiterschaltungsanordnung mit Testschaltung.
DE68905487D1 (de) Verfahren zur herstellung einer integrierten schaltung mit bauelementen, die gates auf zwei ebenen enthalten.
DE3676629D1 (de) Schnittstellenschaltung zur umsetzung von ecl-signalpegeln in fet-logiksignalpegel.
DE69404700T2 (de) Referenzdiode in integriertem Bipolarschaltkreis
DE68910360T2 (de) Methode zur Herstellung eines MOS-Halbleiter-Leistungsbauelementes (HIMOS) mit Leitfähigkeitsmodulation.
DE3672029D1 (de) Bipolarer integrierter schaltkreis mit heterouebergaengen.
DE3583113D1 (de) Integrierte halbleiterschaltungsanordnung in polycell-technik.
DE69025844T2 (de) Ausgangsschaltung mit bipolaren Transistoren im Ausgang, zur Verwendung in einem MOS-IC
DE3581159D1 (de) Halbleiteranordnung mit integrierter schaltung.
DE69024420D1 (de) Prozess zur Herstellung eines integrierten Leistungstransistor/Logik-Schaltkreises mit einer Diode.
DE68914583D1 (de) Integrierte Schaltung mit Ausgangsschaltung.
DE58907001D1 (de) Schaltungsanordnung zur Temperaturüberwachung von in einem Halbleiterschaltkreis integrierten Leistungsschalttransistoren.
DE69019698T2 (de) MOS-Bauteile mit einer verbesserten elektrischen Anpassung.
DE69025567T2 (de) Integrierte CMOS-Ausgangsschaltung mit bipolaren Transistoren in der Ausgangsstufe
IT1229335B (it) Magazzino automatico intelligente di circuiti integrati e componenti discreti, in particolare per l'impiego in macchine per l'inserimento automatico di circuiti integrati e/o componenti su schede, pannelli e/o simili.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee