DE69024893T2 - Verfahren zum Herstellen einer Fotodiode - Google Patents
Verfahren zum Herstellen einer FotodiodeInfo
- Publication number
- DE69024893T2 DE69024893T2 DE69024893T DE69024893T DE69024893T2 DE 69024893 T2 DE69024893 T2 DE 69024893T2 DE 69024893 T DE69024893 T DE 69024893T DE 69024893 T DE69024893 T DE 69024893T DE 69024893 T2 DE69024893 T2 DE 69024893T2
- Authority
- DE
- Germany
- Prior art keywords
- photodiode
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/395,922 US4999694A (en) | 1989-08-18 | 1989-08-18 | Photodiode |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69024893D1 DE69024893D1 (de) | 1996-02-29 |
DE69024893T2 true DE69024893T2 (de) | 1996-05-30 |
Family
ID=23565092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69024893T Expired - Fee Related DE69024893T2 (de) | 1989-08-18 | 1990-08-09 | Verfahren zum Herstellen einer Fotodiode |
Country Status (6)
Country | Link |
---|---|
US (1) | US4999694A (de) |
EP (1) | EP0419025B1 (de) |
JP (1) | JPH0389564A (de) |
CA (1) | CA2018320C (de) |
DE (1) | DE69024893T2 (de) |
ES (1) | ES2081935T3 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2773930B2 (ja) * | 1989-10-31 | 1998-07-09 | 三菱電機株式会社 | 光検知装置 |
JPH0521827A (ja) * | 1991-07-11 | 1993-01-29 | Nec Corp | 赤外線検出器の製造方法 |
US5241196A (en) * | 1991-10-15 | 1993-08-31 | Santa Barbara Research Center | Photoresponsive device including composition grading and recessed contacts for trapping minority carriers |
US5449561A (en) * | 1992-07-17 | 1995-09-12 | University Of Houston | Semimetal-semiconductor heterostructures and multilayers |
US5472914A (en) * | 1994-07-14 | 1995-12-05 | The United States Of America As Represented By The Secretary Of The Air Force | Wafer joined optoelectronic integrated circuits and method |
JP2570646B2 (ja) * | 1994-12-13 | 1997-01-08 | 日本電気株式会社 | Siベ−ス半導体結晶基板及びその製造方法 |
JPH08255923A (ja) * | 1995-03-15 | 1996-10-01 | Fujitsu Ltd | Ii−vi族化合物半導体を使用した半導体装置及びその製造方法 |
US5998809A (en) * | 1995-10-06 | 1999-12-07 | Raytheon Company | Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter |
US6545799B1 (en) | 1998-09-02 | 2003-04-08 | Corning Incorporated | Method and apparatus for optical system link control |
WO2004109764A2 (en) * | 2003-06-04 | 2004-12-16 | Myung Cheol Yoo | Method of fabricating vertical structure compound semiconductor devices |
GB0407804D0 (en) * | 2004-04-06 | 2004-05-12 | Qinetiq Ltd | Manufacture of cadmium mercury telluride |
CN101901858B (zh) * | 2004-04-28 | 2014-01-29 | 沃提科尔公司 | 垂直结构半导体器件 |
TWI433343B (zh) * | 2004-06-22 | 2014-04-01 | Verticle Inc | 具有改良光輸出的垂直構造半導體裝置 |
TWI389334B (zh) * | 2004-11-15 | 2013-03-11 | Verticle Inc | 製造及分離半導體裝置之方法 |
US7659474B2 (en) * | 2005-05-04 | 2010-02-09 | The Boeing Company | Solar cell array with isotype-heterojunction diode |
US7829909B2 (en) * | 2005-11-15 | 2010-11-09 | Verticle, Inc. | Light emitting diodes and fabrication methods thereof |
EP2281306A4 (de) * | 2008-05-30 | 2013-05-22 | Sarnoff Corp | Verfahren zur elektronischen befestigung einer rückfläche eines auf einem utsoi-wafer hergestellten rückbeleuchteten abbilders |
CA2744774C (en) | 2008-07-17 | 2017-05-23 | Uriel Solar, Inc. | High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation |
JP5506258B2 (ja) * | 2008-08-06 | 2014-05-28 | キヤノン株式会社 | 整流素子 |
JP5813654B2 (ja) * | 2009-12-10 | 2015-11-17 | ウリエル ソーラー インコーポレイテッド | 太陽光発電における使用のための高電力効率多結晶CdTe薄膜半導体光起電力電池構造 |
US11043604B2 (en) * | 2015-07-28 | 2021-06-22 | University Of Rochester | Low dark current, resonant cavity-enhanced infrared photodetectors |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3723190A (en) * | 1968-10-09 | 1973-03-27 | Honeywell Inc | Process for preparing mercury cadmium telluride |
US3761718A (en) * | 1972-09-07 | 1973-09-25 | Honeywell Inc | Detector apparatus using semiconductor laminae |
US4201604A (en) * | 1975-08-13 | 1980-05-06 | Raytheon Company | Process for making a negative resistance diode utilizing spike doping |
US4123295A (en) * | 1977-01-14 | 1978-10-31 | California Institute Of Technology | Mercury chalcogenide contact for semiconductor devices |
FR2568485B1 (fr) * | 1984-08-06 | 1990-03-23 | Rhone Poulenc Rech | Appareil de fractionnement par electrophorese de solutions contenant des proteines, utilisable notamment pour le fractionnement du plasma humain |
US4648917A (en) * | 1985-08-26 | 1987-03-10 | Ford Aerospace & Communications Corporation | Non isothermal method for epitaxially growing HgCdTe |
FR2592740B1 (fr) * | 1986-01-08 | 1988-03-18 | Commissariat Energie Atomique | Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication |
FR2598558B1 (fr) * | 1986-05-07 | 1988-11-10 | Telecommunications Sa | Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm |
FR2614135B1 (fr) * | 1987-04-14 | 1989-06-30 | Telecommunications Sa | Photodiode hgcdte a reponse rapide |
DE3736201C2 (de) * | 1987-10-26 | 1993-12-09 | Siemens Ag | Wellenlängenselektives Diodenarray |
-
1989
- 1989-08-18 US US07/395,922 patent/US4999694A/en not_active Expired - Lifetime
-
1990
- 1990-06-05 CA CA002018320A patent/CA2018320C/en not_active Expired - Fee Related
- 1990-08-09 EP EP90308748A patent/EP0419025B1/de not_active Expired - Lifetime
- 1990-08-09 DE DE69024893T patent/DE69024893T2/de not_active Expired - Fee Related
- 1990-08-09 ES ES90308748T patent/ES2081935T3/es not_active Expired - Lifetime
- 1990-08-17 JP JP2215943A patent/JPH0389564A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA2018320C (en) | 1994-07-19 |
JPH0389564A (ja) | 1991-04-15 |
EP0419025A1 (de) | 1991-03-27 |
CA2018320A1 (en) | 1991-02-18 |
EP0419025B1 (de) | 1996-01-17 |
DE69024893D1 (de) | 1996-02-29 |
ES2081935T3 (es) | 1996-03-16 |
US4999694A (en) | 1991-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69030229D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
DE69033736D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
DE68911621D1 (de) | Verfahren zum Herstellen einer Einrichtung. | |
DE69024893T2 (de) | Verfahren zum Herstellen einer Fotodiode | |
DE69022087D1 (de) | Verfahren zum Herstellen einer Halbleiteranordnung. | |
DE69133316D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
DE69032793T2 (de) | Verfahren zum Herstellen einer Karte | |
DE68926224T2 (de) | Verfahren zum Herstellen einer BICMOS-Anordnung | |
DE69031543D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
DE68917995D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung. | |
DE68919549T2 (de) | Verfahren zum Herstellen einer Halbleiteranordnung. | |
DE69028964D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
DE68920094D1 (de) | Verfahren zum Herstellen einer Halbleiteranordnung. | |
DE68906034T2 (de) | Verfahren zum Herstellen einer Halbleiteranordnung. | |
DE58907059D1 (de) | Verfahren zum Herstellen einer blauempfindlichen Fotodiode. | |
DE69120975D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
DE3883856D1 (de) | Verfahren zum Herstellen einer Halbleiteranordnung. | |
DE69022710D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung. | |
DE3888457D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung. | |
DE69018884T2 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung. | |
DE69116592T2 (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
DE69116938T2 (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
DE69128326D1 (de) | Ein Verfahren zum Herstellen einer Halbleiteranordnung | |
DE69029836D1 (de) | Verfahren zum Herstellen einer Kontaktzone | |
DE69429636D1 (de) | Verfahren zum Herstellen einer Halbleiteranordnung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |