DE69013589T2 - Verfahren zur Abscheidung von Zinksulfidfilmen. - Google Patents
Verfahren zur Abscheidung von Zinksulfidfilmen.Info
- Publication number
- DE69013589T2 DE69013589T2 DE69013589T DE69013589T DE69013589T2 DE 69013589 T2 DE69013589 T2 DE 69013589T2 DE 69013589 T DE69013589 T DE 69013589T DE 69013589 T DE69013589 T DE 69013589T DE 69013589 T2 DE69013589 T2 DE 69013589T2
- Authority
- DE
- Germany
- Prior art keywords
- deposition
- zinc sulfide
- sulfide films
- films
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000005083 Zinc sulfide Substances 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 229910052984 zinc sulfide Inorganic materials 0.000 title 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical group [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
- C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/374,883 US5077092A (en) | 1989-06-30 | 1989-06-30 | Method and apparatus for deposition of zinc sulfide films |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69013589D1 DE69013589D1 (de) | 1994-12-01 |
DE69013589T2 true DE69013589T2 (de) | 1995-05-24 |
Family
ID=23478578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69013589T Expired - Fee Related DE69013589T2 (de) | 1989-06-30 | 1990-06-25 | Verfahren zur Abscheidung von Zinksulfidfilmen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5077092A (de) |
EP (1) | EP0405875B1 (de) |
JP (1) | JPH03263316A (de) |
DE (1) | DE69013589T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5273774A (en) * | 1992-12-31 | 1993-12-28 | Osram Sylvania Inc. | Method of making zinc sulfide electroluminescent phosphor particles |
US5837320A (en) * | 1996-02-27 | 1998-11-17 | The University Of New Mexico | Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands |
US6083561A (en) * | 1998-02-05 | 2000-07-04 | Cvd, Inc. | Low scatter, high quality water clear zinc sulfide |
US6221482B1 (en) * | 1999-04-07 | 2001-04-24 | Cvd Inc. | Low stress, water-clear zinc sulfide |
US20090001491A1 (en) * | 2006-10-30 | 2009-01-01 | Biomimetics Technologies Inc | Method for producing a microchip that is able to detect infrared light with a semiconductor at room temperature |
WO2009051799A1 (en) * | 2007-10-18 | 2009-04-23 | Structured Materials Inc. | Germanium sulfide compounds for solid electrolytic memory elements |
CN107604340B (zh) * | 2017-08-31 | 2023-09-01 | 安徽光智科技有限公司 | 化学气相沉积炉 |
EP4303936A1 (de) * | 2021-03-04 | 2024-01-10 | Kabushiki Kaisha Toshiba | Transparente elektrode, verfahren zu ihrer herstellung und elektronische vorrichtung unter verwendung einer transparenten elektrode |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4447469A (en) * | 1982-06-10 | 1984-05-08 | Hughes Aircraft Company | Process for forming sulfide layers by photochemical vapor deposition |
US4504521A (en) * | 1984-03-22 | 1985-03-12 | Rca Corporation | LPCVD Deposition of tantalum silicide |
JPH0645879B2 (ja) * | 1985-01-17 | 1994-06-15 | セイコーエプソン株式会社 | 硫化亜鉛薄膜の製造法 |
JPH0645878B2 (ja) * | 1985-01-17 | 1994-06-15 | セイコーエプソン株式会社 | 硫化亜鉛薄膜の製造法 |
JPS61166967A (ja) * | 1985-01-18 | 1986-07-28 | Mitsubishi Electric Corp | スパツタ装置のウエハ保持装置 |
JPS61205696A (ja) * | 1985-03-07 | 1986-09-11 | Nec Corp | 3−5族化合物半導体の気相成長装置 |
JPH0613438B2 (ja) * | 1985-03-08 | 1994-02-23 | 日本電信電話株式会社 | 硫化亜鉛膜の作製方法 |
JPS61205695A (ja) * | 1985-03-11 | 1986-09-11 | Sumitomo Electric Ind Ltd | 気相エピタキシヤル成長装置 |
JPS61243180A (ja) * | 1985-04-19 | 1986-10-29 | Sumitomo Electric Ind Ltd | 被覆鋼の製造法 |
JPS61243177A (ja) * | 1985-04-20 | 1986-10-29 | Kanegafuchi Chem Ind Co Ltd | 硫化亜鉛薄膜の製造方法 |
JPS61243179A (ja) * | 1985-04-22 | 1986-10-29 | Denki Kagaku Kogyo Kk | 金属管内面の被膜形成装置 |
-
1989
- 1989-06-30 US US07/374,883 patent/US5077092A/en not_active Expired - Fee Related
-
1990
- 1990-06-25 EP EP90306900A patent/EP0405875B1/de not_active Expired - Lifetime
- 1990-06-25 DE DE69013589T patent/DE69013589T2/de not_active Expired - Fee Related
- 1990-06-29 JP JP2170436A patent/JPH03263316A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0405875A1 (de) | 1991-01-02 |
JPH03263316A (ja) | 1991-11-22 |
EP0405875B1 (de) | 1994-10-26 |
DE69013589D1 (de) | 1994-12-01 |
US5077092A (en) | 1991-12-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: RAYTHEON CO., LEXINGTON, MASS., US |
|
8339 | Ceased/non-payment of the annual fee |