DE69012382D1 - Referenzzelle für das Lesen von EEPROM-Speicheranordnungen. - Google Patents

Referenzzelle für das Lesen von EEPROM-Speicheranordnungen.

Info

Publication number
DE69012382D1
DE69012382D1 DE69012382T DE69012382T DE69012382D1 DE 69012382 D1 DE69012382 D1 DE 69012382D1 DE 69012382 T DE69012382 T DE 69012382T DE 69012382 T DE69012382 T DE 69012382T DE 69012382 D1 DE69012382 D1 DE 69012382D1
Authority
DE
Germany
Prior art keywords
reference cell
memory arrays
eeprom memory
reading eeprom
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69012382T
Other languages
English (en)
Other versions
DE69012382T2 (de
Inventor
Marco Olivo
Carlo Riva
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE69012382D1 publication Critical patent/DE69012382D1/de
Application granted granted Critical
Publication of DE69012382T2 publication Critical patent/DE69012382T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
DE69012382T 1989-03-23 1990-03-12 Referenzzelle für das Lesen von EEPROM-Speicheranordnungen. Expired - Fee Related DE69012382T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8919875A IT1228822B (it) 1989-03-23 1989-03-23 Cella di riferimento per la lettura di dispositivi di memoria eeprom.

Publications (2)

Publication Number Publication Date
DE69012382D1 true DE69012382D1 (de) 1994-10-20
DE69012382T2 DE69012382T2 (de) 1995-02-16

Family

ID=11161987

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012382T Expired - Fee Related DE69012382T2 (de) 1989-03-23 1990-03-12 Referenzzelle für das Lesen von EEPROM-Speicheranordnungen.

Country Status (5)

Country Link
US (1) US5081610A (de)
EP (1) EP0388752B1 (de)
JP (1) JPH02282996A (de)
DE (1) DE69012382T2 (de)
IT (1) IT1228822B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2853217B2 (ja) * 1989-11-21 1999-02-03 日本電気株式会社 半導体メモリ
JP2933090B2 (ja) * 1990-04-25 1999-08-09 富士通株式会社 不揮発性半導体記憶装置
US5748525A (en) * 1993-10-15 1998-05-05 Advanced Micro Devices, Inc. Array cell circuit with split read/write line
JP3569728B2 (ja) * 1995-01-11 2004-09-29 直 柴田 不揮発性半導体メモリ装置
EP0872850B1 (de) * 1997-04-14 2003-07-02 STMicroelectronics S.r.l. Hochpräzisionsanalogleseschaltkreis für Speichermatrizen, insbesondere für Flash-Analogspeichermatrizen
US6411549B1 (en) * 2000-06-21 2002-06-25 Atmel Corporation Reference cell for high speed sensing in non-volatile memories
US6538922B1 (en) * 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725984A (en) * 1984-02-21 1988-02-16 Seeq Technology, Inc. CMOS eprom sense amplifier
JPS61166078A (ja) * 1985-01-17 1986-07-26 Matsushita Electronics Corp フロ−テイング・ゲ−ト型不揮発性メモリ−素子
US4805148A (en) * 1985-11-22 1989-02-14 Diehl Nagle Sherra E High impendance-coupled CMOS SRAM for improved single event immunity
JPS62154786A (ja) * 1985-12-27 1987-07-09 Toshiba Corp 不揮発性半導体メモリ
US4780750A (en) * 1986-01-03 1988-10-25 Sierra Semiconductor Corporation Electrically alterable non-volatile memory device
FR2599176A1 (fr) * 1986-05-23 1987-11-27 Eurotechnique Sa Memoire morte programmable electriquement
IT1198109B (it) * 1986-11-18 1988-12-21 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel
JPH0715799B2 (ja) * 1987-06-30 1995-02-22 日本電気株式会社 半導体記憶装置
US4802124A (en) * 1987-08-03 1989-01-31 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with reduced tunnel device count for improved reliability

Also Published As

Publication number Publication date
IT1228822B (it) 1991-07-04
JPH02282996A (ja) 1990-11-20
IT8919875A0 (it) 1989-03-23
DE69012382T2 (de) 1995-02-16
US5081610A (en) 1992-01-14
EP0388752B1 (de) 1994-09-14
EP0388752A2 (de) 1990-09-26
EP0388752A3 (de) 1992-01-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MAILAND

8339 Ceased/non-payment of the annual fee