IT8919875A0 - Cella di riferimento per la lettura di dispositivi di memoria eeprom. - Google Patents

Cella di riferimento per la lettura di dispositivi di memoria eeprom.

Info

Publication number
IT8919875A0
IT8919875A0 IT8919875A IT1987589A IT8919875A0 IT 8919875 A0 IT8919875 A0 IT 8919875A0 IT 8919875 A IT8919875 A IT 8919875A IT 1987589 A IT1987589 A IT 1987589A IT 8919875 A0 IT8919875 A0 IT 8919875A0
Authority
IT
Italy
Prior art keywords
memory devices
reference cell
eeprom memory
reading eeprom
reading
Prior art date
Application number
IT8919875A
Other languages
English (en)
Other versions
IT1228822B (it
Inventor
Marco Olivo
Carlo Riva
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8919875A priority Critical patent/IT1228822B/it
Publication of IT8919875A0 publication Critical patent/IT8919875A0/it
Priority to EP90104663A priority patent/EP0388752B1/en
Priority to DE69012382T priority patent/DE69012382T2/de
Priority to US07/491,903 priority patent/US5081610A/en
Priority to JP2075356A priority patent/JPH02282996A/ja
Application granted granted Critical
Publication of IT1228822B publication Critical patent/IT1228822B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
IT8919875A 1989-03-23 1989-03-23 Cella di riferimento per la lettura di dispositivi di memoria eeprom. IT1228822B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8919875A IT1228822B (it) 1989-03-23 1989-03-23 Cella di riferimento per la lettura di dispositivi di memoria eeprom.
EP90104663A EP0388752B1 (en) 1989-03-23 1990-03-12 Reference cell for reading eeprom memory devices
DE69012382T DE69012382T2 (de) 1989-03-23 1990-03-12 Referenzzelle für das Lesen von EEPROM-Speicheranordnungen.
US07/491,903 US5081610A (en) 1989-03-23 1990-03-12 Reference cell for reading eeprom memory devices
JP2075356A JPH02282996A (ja) 1989-03-23 1990-03-22 Ｅｅｐｒｏｍメモリ素子を読出すための基準セル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8919875A IT1228822B (it) 1989-03-23 1989-03-23 Cella di riferimento per la lettura di dispositivi di memoria eeprom.

Publications (2)

Publication Number Publication Date
IT8919875A0 true IT8919875A0 (it) 1989-03-23
IT1228822B IT1228822B (it) 1991-07-04

Family

ID=11161987

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8919875A IT1228822B (it) 1989-03-23 1989-03-23 Cella di riferimento per la lettura di dispositivi di memoria eeprom.

Country Status (5)

Country Link
US (1) US5081610A (it)
EP (1) EP0388752B1 (it)
JP (1) JPH02282996A (it)
DE (1) DE69012382T2 (it)
IT (1) IT1228822B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2853217B2 (ja) * 1989-11-21 1999-02-03 日本電気株式会社 半導体メモリ
JP2933090B2 (ja) * 1990-04-25 1999-08-09 富士通株式会社 不揮発性半導体記憶装置
US5748525A (en) * 1993-10-15 1998-05-05 Advanced Micro Devices, Inc. Array cell circuit with split read/write line
JP3569728B2 (ja) * 1995-01-11 2004-09-29 直 柴田 不揮発性半導体メモリ装置
DE69723227T2 (de) * 1997-04-14 2004-06-03 Stmicroelectronics S.R.L., Agrate Brianza Hochpräzisionsanalogleseschaltkreis für Speichermatrizen, insbesondere für Flash-Analogspeichermatrizen
US6411549B1 (en) * 2000-06-21 2002-06-25 Atmel Corporation Reference cell for high speed sensing in non-volatile memories
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725984A (en) * 1984-02-21 1988-02-16 Seeq Technology, Inc. CMOS eprom sense amplifier
JPS61166078A (ja) * 1985-01-17 1986-07-26 Matsushita Electronics Corp フロ−テイング・ゲ−ト型不揮発性メモリ−素子
US4805148A (en) * 1985-11-22 1989-02-14 Diehl Nagle Sherra E High impendance-coupled CMOS SRAM for improved single event immunity
JPS62154786A (ja) * 1985-12-27 1987-07-09 Toshiba Corp 不揮発性半導体メモリ
US4780750A (en) * 1986-01-03 1988-10-25 Sierra Semiconductor Corporation Electrically alterable non-volatile memory device
FR2599176A1 (fr) * 1986-05-23 1987-11-27 Eurotechnique Sa Memoire morte programmable electriquement
IT1198109B (it) * 1986-11-18 1988-12-21 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel
JPH0715799B2 (ja) * 1987-06-30 1995-02-22 日本電気株式会社 半導体記憶装置
US4802124A (en) * 1987-08-03 1989-01-31 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with reduced tunnel device count for improved reliability

Also Published As

Publication number Publication date
DE69012382D1 (de) 1994-10-20
IT1228822B (it) 1991-07-04
EP0388752B1 (en) 1994-09-14
DE69012382T2 (de) 1995-02-16
JPH02282996A (ja) 1990-11-20
EP0388752A2 (en) 1990-09-26
US5081610A (en) 1992-01-14
EP0388752A3 (en) 1992-01-02

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329