DE69010485D1 - Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers. - Google Patents
Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers.Info
- Publication number
- DE69010485D1 DE69010485D1 DE69010485T DE69010485T DE69010485D1 DE 69010485 D1 DE69010485 D1 DE 69010485D1 DE 69010485 T DE69010485 T DE 69010485T DE 69010485 T DE69010485 T DE 69010485T DE 69010485 D1 DE69010485 D1 DE 69010485D1
- Authority
- DE
- Germany
- Prior art keywords
- self
- producing
- semiconductor laser
- web structure
- aligning semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/10—Lift-off masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP90810279A EP0450255B1 (de) | 1990-04-06 | 1990-04-06 | Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69010485D1 true DE69010485D1 (de) | 1994-08-11 |
DE69010485T2 DE69010485T2 (de) | 1995-01-26 |
Family
ID=8205919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69010485T Expired - Fee Related DE69010485T2 (de) | 1990-04-06 | 1990-04-06 | Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5059552A (de) |
EP (1) | EP0450255B1 (de) |
JP (1) | JPH06101612B2 (de) |
CA (1) | CA2039875C (de) |
DE (1) | DE69010485T2 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5436922A (en) * | 1990-09-12 | 1995-07-25 | Seiko Epson Corporation | Surface emission type semiconductor laser |
US5404369A (en) * | 1990-09-12 | 1995-04-04 | Seiko Epson Corporation | Surface emission type semiconductor laser |
US5317584A (en) * | 1990-09-12 | 1994-05-31 | Seiko Epson Corporation | Surface emission type semiconductor laser |
US5537666A (en) * | 1990-09-12 | 1996-07-16 | Seiko Epson Coropration | Surface emission type semiconductor laser |
US5356832A (en) * | 1990-09-12 | 1994-10-18 | Seiko Epson Corporation | Method of making surface emission type semiconductor laser |
JPH04243216A (ja) * | 1991-01-17 | 1992-08-31 | Nec Corp | 光導波路の製造方法ならびに光集積素子及びその製造方法 |
FR2678775B1 (fr) * | 1991-07-05 | 1997-02-28 | Thomson Csf | Procede de realisation d'un dispositif optoelectronique |
JP2754957B2 (ja) * | 1991-07-10 | 1998-05-20 | 日本電気株式会社 | 半導体光制御素子およびその製造方法 |
US5316967A (en) * | 1992-01-21 | 1994-05-31 | Mitsubishi Denki Kabushiki Kaisha | Method for producing semiconductor device |
DE4240539C2 (de) * | 1992-01-21 | 1997-07-03 | Mitsubishi Electric Corp | Verfahren zur Herstellung eines Halbleiterlasers |
US5347460A (en) * | 1992-08-25 | 1994-09-13 | International Business Machines Corporation | Method and system employing optical emission spectroscopy for monitoring and controlling semiconductor fabrication |
US5307357A (en) * | 1992-11-05 | 1994-04-26 | International Business Machines Corporation | Protection means for ridge waveguide laser structures using thick organic films |
US5311539A (en) * | 1992-11-25 | 1994-05-10 | International Business Machines Corporation | Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation |
US5305340A (en) * | 1992-12-16 | 1994-04-19 | International Business Machines Corporation | Waveguide ridge laser device with improved mounting and ridge protection |
US5376582A (en) * | 1993-10-15 | 1994-12-27 | International Business Machines Corporation | Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement |
JPH09205254A (ja) * | 1996-01-26 | 1997-08-05 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体製造装置並びに半導体レーザの製造方法 |
KR100213187B1 (ko) | 1997-03-20 | 1999-08-02 | 윤종용 | 에러 마스터 검출장치 |
US6930028B1 (en) * | 1997-06-09 | 2005-08-16 | Texas Instruments Incorporated | Antireflective structure and method |
US6141365A (en) | 1997-12-31 | 2000-10-31 | Lasertron | Semiconductor laser with kink suppression layer |
DE19813180A1 (de) * | 1998-03-25 | 1999-10-07 | Siemens Ag | Verfahren zur Herstellung eines Stegwellenleiters in III-V-Verbindungshalbleiter-Schichtstrukturen und Halbleiterlaservorrichtung besonders für niedere Serienwiderstände |
AU4708399A (en) * | 1998-06-23 | 2000-01-10 | Trustees Of Boston University | Crystallographic wet chemical etching of iii-nitride material |
US6365968B1 (en) | 1998-08-07 | 2002-04-02 | Corning Lasertron, Inc. | Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device |
DE10219886B4 (de) | 2002-05-03 | 2007-10-04 | Chunghwa Telecom Co.Ltd. | Selbstjustierendes Verfahren zur Herstellung eines Stegwellenleiter-Halbleiterlasers |
JP2003347674A (ja) * | 2002-05-30 | 2003-12-05 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
WO2004059706A2 (en) | 2002-12-20 | 2004-07-15 | Cree, Inc. | Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices |
KR100818522B1 (ko) | 2004-08-31 | 2008-03-31 | 삼성전기주식회사 | 레이저 다이오드의 제조방법 |
JP4836703B2 (ja) * | 2006-07-31 | 2011-12-14 | パナソニック株式会社 | 半導体レーザおよびその製造方法 |
CN101276993B (zh) * | 2006-10-16 | 2010-12-08 | 三菱电机株式会社 | 半导体光学元件的制造方法 |
US7598104B2 (en) | 2006-11-24 | 2009-10-06 | Agency For Science, Technology And Research | Method of forming a metal contact and passivation of a semiconductor feature |
US7833695B2 (en) * | 2007-05-31 | 2010-11-16 | Corning Incorporated | Methods of fabricating metal contact structures for laser diodes using backside UV exposure |
JP2009076867A (ja) * | 2007-08-30 | 2009-04-09 | Sumitomo Electric Ind Ltd | 半導体素子の製造方法 |
JP5298938B2 (ja) * | 2009-02-24 | 2013-09-25 | 住友電気工業株式会社 | 半導体素子の製造方法 |
US10490971B2 (en) | 2017-06-09 | 2019-11-26 | International Business Machines Corporation | Self-alignment features for III-V ridge process and angled facet die |
CN113823992B (zh) * | 2021-09-14 | 2022-11-11 | 苏州长瑞光电有限公司 | 半导体器件制造方法及半导体器件 |
CN115433924B (zh) * | 2022-08-05 | 2023-10-10 | 武汉光安伦光电技术有限公司 | 一种通信激光器及其制作方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5751276B2 (de) * | 1973-10-23 | 1982-11-01 | ||
US4366568A (en) * | 1979-12-20 | 1982-12-28 | Matsushita Electric Industrial Co. Ltd. | Semiconductor laser |
US4276098A (en) * | 1980-03-31 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Batch processing of semiconductor devices |
US4566171A (en) * | 1983-06-20 | 1986-01-28 | At&T Bell Laboratories | Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices |
EP0157555B1 (de) * | 1984-03-27 | 1990-10-03 | Matsushita Electric Industrial Co., Ltd. | Halbleiterlaser und Verfahren zu dessen Fabrikation |
US4839900A (en) * | 1985-08-21 | 1989-06-13 | Sharp Kabushiki Kaisha | Buried type semiconductor laser device |
JPS63164484A (ja) * | 1986-12-26 | 1988-07-07 | Sharp Corp | 半導体レ−ザ素子 |
US4922499A (en) * | 1988-02-09 | 1990-05-01 | Kabushiki Kaisha Toshiba | Semiconductor laser device and the manufacturing method thereof |
US4940672A (en) * | 1989-03-17 | 1990-07-10 | Kopin Corporation | Method of making monolithic integrated III-V type laser devices and silicon devices on silicon |
KR910008439B1 (ko) * | 1989-04-06 | 1991-10-15 | 재단법인 한국전자통신연구소 | 매립형 레이저 다이오드의 제조방법 |
US4933302A (en) * | 1989-04-19 | 1990-06-12 | International Business Machines Corporation | Formation of laser mirror facets and integration of optoelectronics |
-
1990
- 1990-04-06 EP EP90810279A patent/EP0450255B1/de not_active Expired - Lifetime
- 1990-04-06 DE DE69010485T patent/DE69010485T2/de not_active Expired - Fee Related
-
1991
- 1991-03-06 JP JP3040119A patent/JPH06101612B2/ja not_active Expired - Fee Related
- 1991-03-15 US US07/669,816 patent/US5059552A/en not_active Expired - Lifetime
- 1991-04-05 CA CA002039875A patent/CA2039875C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH06101612B2 (ja) | 1994-12-12 |
US5059552A (en) | 1991-10-22 |
CA2039875A1 (en) | 1991-10-07 |
EP0450255B1 (de) | 1994-07-06 |
CA2039875C (en) | 1994-05-03 |
DE69010485T2 (de) | 1995-01-26 |
EP0450255A1 (de) | 1991-10-09 |
JPH05190968A (ja) | 1993-07-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |