DE69009503D1 - Resist-Materialien für Lithographie mittels eines Elektronen- oder Röntgenstrahls. - Google Patents

Resist-Materialien für Lithographie mittels eines Elektronen- oder Röntgenstrahls.

Info

Publication number
DE69009503D1
DE69009503D1 DE69009503T DE69009503T DE69009503D1 DE 69009503 D1 DE69009503 D1 DE 69009503D1 DE 69009503 T DE69009503 T DE 69009503T DE 69009503 T DE69009503 T DE 69009503T DE 69009503 D1 DE69009503 D1 DE 69009503D1
Authority
DE
Germany
Prior art keywords
lithography
electron
ray beam
resist materials
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009503T
Other languages
English (en)
Other versions
DE69009503T2 (de
Inventor
Akiko Kotachi
Satoshi Takechi
Yuko Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69009503D1 publication Critical patent/DE69009503D1/de
Publication of DE69009503T2 publication Critical patent/DE69009503T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69009503T 1989-01-20 1990-01-17 Resist-Materialien für Lithographie mittels eines Elektronen- oder Röntgenstrahls. Expired - Fee Related DE69009503T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1012447A JP2653148B2 (ja) 1989-01-20 1989-01-20 レジスト組成物

Publications (2)

Publication Number Publication Date
DE69009503D1 true DE69009503D1 (de) 1994-07-14
DE69009503T2 DE69009503T2 (de) 1994-09-29

Family

ID=11805588

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009503T Expired - Fee Related DE69009503T2 (de) 1989-01-20 1990-01-17 Resist-Materialien für Lithographie mittels eines Elektronen- oder Röntgenstrahls.

Country Status (4)

Country Link
US (2) US5066751A (de)
EP (1) EP0379173B1 (de)
JP (1) JP2653148B2 (de)
DE (1) DE69009503T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2659025B2 (ja) * 1990-01-24 1997-09-30 富士通株式会社 放射線用レジスト及びその製造方法及びパターン形成方法
JP2707785B2 (ja) * 1990-03-13 1998-02-04 富士通株式会社 レジスト組成物およびパターン形成方法
JPH0442229A (ja) * 1990-06-08 1992-02-12 Fujitsu Ltd レジスト材料およびパターンの形成方法
JP2980149B2 (ja) * 1993-09-24 1999-11-22 富士通株式会社 レジスト材料およびパターン形成方法
DE10233849B4 (de) 2002-07-22 2005-07-21 Infineon Technologies Ag Polymerisierbare Zusammensetzung, Polymer, Resist und Lithographieverfahren
US6929904B2 (en) * 2002-11-14 2005-08-16 The University Of North Carolina At Chapel Hill Positive tone lithography with carbon dioxide development systems
US6872504B2 (en) * 2002-12-10 2005-03-29 Massachusetts Institute Of Technology High sensitivity X-ray photoresist
JP4434762B2 (ja) * 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
KR101835941B1 (ko) * 2015-10-19 2018-03-08 삼성에스디아이 주식회사 유기발광소자 봉지용 조성물 및 이로부터 제조된 유기발광소자 표시장치
US10254650B2 (en) 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings
CN111094483A (zh) 2017-08-31 2020-05-01 三星Sdi株式会社 接着膜及包括其的光学构件
KR102430601B1 (ko) 2020-03-03 2022-08-08 삼성에스디아이 주식회사 점착 필름, 이를 포함하는 광학 부재 및 이를 포함하는 광학표시장치
KR102527459B1 (ko) 2020-05-29 2023-04-28 삼성에스디아이 주식회사 점착성 보호 필름, 이를 포함하는 광학 부재 및 이를 포함하는 광학표시장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59197036A (ja) * 1982-06-28 1984-11-08 Nissan Chem Ind Ltd パタ−ン形成用材料
JPH0682215B2 (ja) * 1986-03-31 1994-10-19 株式会社東芝 放射線用レジストおよびそれを用いたパタ−ン形成方法
JPS63116151A (ja) * 1986-11-05 1988-05-20 Toshiba Corp パタン形成方法
US4788127A (en) * 1986-11-17 1988-11-29 Eastman Kodak Company Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
JPS63216044A (ja) * 1987-03-05 1988-09-08 Nippon Zeon Co Ltd パタ−ン形成材料
JPH02974A (ja) * 1988-02-26 1990-01-05 Daikin Ind Ltd レジスト材料

Also Published As

Publication number Publication date
DE69009503T2 (de) 1994-09-29
EP0379173A1 (de) 1990-07-25
JP2653148B2 (ja) 1997-09-10
JPH02191957A (ja) 1990-07-27
US5104479A (en) 1992-04-14
US5066751A (en) 1991-11-19
EP0379173B1 (de) 1994-06-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee