DE68917749D1 - Magnetische Objektivlinse für Elektronenstrahl-Belichtungsgerät. - Google Patents

Magnetische Objektivlinse für Elektronenstrahl-Belichtungsgerät.

Info

Publication number
DE68917749D1
DE68917749D1 DE68917749T DE68917749T DE68917749D1 DE 68917749 D1 DE68917749 D1 DE 68917749D1 DE 68917749 T DE68917749 T DE 68917749T DE 68917749 T DE68917749 T DE 68917749T DE 68917749 D1 DE68917749 D1 DE 68917749D1
Authority
DE
Germany
Prior art keywords
electron beam
objective lens
exposure device
beam exposure
magnetic objective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917749T
Other languages
English (en)
Other versions
DE68917749T2 (de
Inventor
Hiroshi Yasuda
Masahiko Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE68917749D1 publication Critical patent/DE68917749D1/de
Publication of DE68917749T2 publication Critical patent/DE68917749T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/14—Arrangements for focusing or reflecting ray or beam
    • H01J3/20—Magnetic lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0209—Avoiding or diminishing effects of eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/1415—Bores or yokes, i.e. magnetic circuit in general

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE68917749T 1988-02-16 1989-02-15 Magnetische Objektivlinse für Elektronenstrahl-Belichtungsgerät. Expired - Fee Related DE68917749T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3308888 1988-02-16

Publications (2)

Publication Number Publication Date
DE68917749D1 true DE68917749D1 (de) 1994-10-06
DE68917749T2 DE68917749T2 (de) 1994-12-22

Family

ID=12376930

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917749T Expired - Fee Related DE68917749T2 (de) 1988-02-16 1989-02-15 Magnetische Objektivlinse für Elektronenstrahl-Belichtungsgerät.

Country Status (4)

Country Link
US (1) US4929838A (de)
EP (1) EP0329097B1 (de)
KR (1) KR920000941B1 (de)
DE (1) DE68917749T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304811A (en) * 1991-08-09 1994-04-19 Fujitsu Ltd. Lithography system using charged-particle beam and method of using the same
US5391886A (en) * 1991-08-09 1995-02-21 Fujitsu Limited Charged particle beam exposure system and method of exposing a pattern on an object by such a charged particle beam exposure system
JP2706192B2 (ja) * 1991-11-06 1998-01-28 富士通株式会社 電子ビーム露光装置
JPH09223475A (ja) * 1996-02-19 1997-08-26 Nikon Corp 電磁偏向器、及び該偏向器を用いた荷電粒子線転写装置
EP1091383A3 (de) * 1999-10-07 2005-01-19 Lucent Technologies Inc. Elektronenstrahl-Abbildungsgerät
US6768117B1 (en) * 2000-07-25 2004-07-27 Applied Materials, Inc. Immersion lens with magnetic shield for charged particle beam system
DE10044199B9 (de) 2000-09-07 2005-07-28 Carl Zeiss Smt Ag Ablenkanordnung und Projektionssystem für geladene Teilchen
DE10109965A1 (de) 2001-03-01 2002-09-12 Zeiss Carl Teilchenoptische Linsenanordnung und Verfahren unter Einsatz einer solchen Linsenanordnung
US6596999B2 (en) * 2001-11-07 2003-07-22 Nikon Corporation High performance source for electron beam projection lithography
EP1489641B1 (de) * 2003-06-18 2019-08-14 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Ablenksystem für geladene Teilchen
WO2007060017A2 (en) 2005-11-28 2007-05-31 Carl Zeiss Smt Ag Particle-optical component
JP4987554B2 (ja) * 2007-04-26 2012-07-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
WO2020108801A1 (en) * 2018-11-30 2020-06-04 Arcam Ab Apparatus and method for forming a three-dimensional article

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1639280C3 (de) * 1967-03-30 1974-01-31 Takeo Kawasaki Kanagawa Ichinokawa (Japan) Elektronenmikroskop mit einer magnetischen Zylinderlinse zur Energieanalyse der Elektronen
FR2294489A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Dispositif pour le trace programme de dessins par bombardement de particules
JPS5842935B2 (ja) * 1978-04-07 1983-09-22 日本電子株式会社 走査電子顕微鏡等の対物レンズ
JPS5693318A (en) * 1979-12-10 1981-07-28 Fujitsu Ltd Electron beam exposure device
US4376249A (en) * 1980-11-06 1983-03-08 International Business Machines Corporation Variable axis electron beam projection system
JPS5780645A (en) * 1980-11-06 1982-05-20 Jeol Ltd Magnetic field type objective lens
JPS57145259A (en) * 1981-03-03 1982-09-08 Akashi Seisakusho Co Ltd Scanning type electron microscope and its similar device
US4544846A (en) * 1983-06-28 1985-10-01 International Business Machines Corporation Variable axis immersion lens electron beam projection system
US4554457A (en) * 1983-07-08 1985-11-19 Surface Science Laboratories, Inc. Magnetic lens to rotate transverse particle momenta
GB2164202A (en) * 1984-09-05 1986-03-12 Philips Electronic Associated Charged particle beam apparatus
DE3786588D1 (de) * 1986-04-24 1993-08-26 Integrated Circuit Testing Elektrostatisch-magnetische-linse fuer korpuskularstrahlgeraete.

Also Published As

Publication number Publication date
EP0329097B1 (de) 1994-08-31
DE68917749T2 (de) 1994-12-22
KR890013689A (ko) 1989-09-25
KR920000941B1 (ko) 1992-01-31
EP0329097A3 (en) 1990-06-27
EP0329097A2 (de) 1989-08-23
US4929838A (en) 1990-05-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee