DE69001485T2 - Verfahren zur gasphasen-herstellung von diamant. - Google Patents
Verfahren zur gasphasen-herstellung von diamant.Info
- Publication number
- DE69001485T2 DE69001485T2 DE9090101099T DE69001485T DE69001485T2 DE 69001485 T2 DE69001485 T2 DE 69001485T2 DE 9090101099 T DE9090101099 T DE 9090101099T DE 69001485 T DE69001485 T DE 69001485T DE 69001485 T2 DE69001485 T2 DE 69001485T2
- Authority
- DE
- Germany
- Prior art keywords
- diamond
- gas phase
- phase production
- production
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/275—Diamond only using combustion torches
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1015456A JPH0794360B2 (ja) | 1989-01-24 | 1989-01-24 | ダイヤモンドの気相合成法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69001485D1 DE69001485D1 (de) | 1993-06-09 |
DE69001485T2 true DE69001485T2 (de) | 1993-08-12 |
Family
ID=11889304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE9090101099T Expired - Fee Related DE69001485T2 (de) | 1989-01-24 | 1990-01-19 | Verfahren zur gasphasen-herstellung von diamant. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5075096A (de) |
EP (1) | EP0379994B1 (de) |
JP (1) | JPH0794360B2 (de) |
DE (1) | DE69001485T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4092184C2 (de) * | 1989-11-28 | 1995-11-30 | Showa Denko Kk | Vorrichtung zur Dampfphasen-Synthese von Diamant und Verfahren zur Ausführung der Synthese |
US5135730A (en) * | 1990-03-28 | 1992-08-04 | Kabushiki Kaisha Kobe Seiko Sho | Method and apparatus for synthesizing diamond by combustion |
US5260106A (en) * | 1990-08-03 | 1993-11-09 | Fujitsu Limited | Method for forming diamond films by plasma jet CVD |
US5492770A (en) * | 1990-08-03 | 1996-02-20 | Fujitsu Limited | Method and apparatus for vapor deposition of diamond film |
DE69029729T2 (de) * | 1990-08-03 | 1997-05-07 | Fujitsu Ltd | Verfahren zur Abscheidung aus der Gasphase eines Diamantfilmes |
DE69125118T2 (de) * | 1990-12-15 | 1997-06-19 | Fujitsu Ltd | Verfahren zur Herstellung eines Diamant-Überzuges |
DE4115930C1 (de) * | 1991-05-16 | 1992-08-27 | Utp Schweissmaterial Gmbh & Co Kg, 7812 Bad Krozingen, De | |
CA2091665C (en) * | 1992-04-07 | 2003-01-07 | Peter George Tsantrizos | Process for the synthesis of fullerenes |
US5433977A (en) * | 1993-05-21 | 1995-07-18 | Trustees Of Boston University | Enhanced adherence of diamond coatings by combustion flame CVD |
US5674572A (en) * | 1993-05-21 | 1997-10-07 | Trustees Of Boston University | Enhanced adherence of diamond coatings employing pretreatment process |
CA2281972C (en) * | 1993-07-20 | 2000-10-17 | Saint-Gobain/Norton Industrial Ceramics Corporation | Cvd diamond radiation detector |
US7067097B1 (en) * | 2002-02-12 | 2006-06-27 | Wojak Gregory J | Process for preparing a diamond substance |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3449168A (en) * | 1965-08-03 | 1969-06-10 | United Aircraft Corp | Method for catalytically reforming carbonaceous feedstock to produce hydrogen for use in fuel cells |
US3599610A (en) * | 1970-08-03 | 1971-08-17 | Air Prod & Chem | Combustion of high-sulfur coal with minimal ecological trauma |
WO1982000458A1 (en) * | 1980-07-31 | 1982-02-18 | Apollonov V | Method of obtaining diamond and/or diamond-like modifications of boron nitride |
US4522680A (en) * | 1982-04-15 | 1985-06-11 | Matsushita Electric Industrial Co., Ltd. | Method for producing crystals |
JPS63107898A (ja) * | 1986-10-23 | 1988-05-12 | Natl Inst For Res In Inorg Mater | プラズマを用いるダイヤモンドの合成法 |
EP0286306B1 (de) * | 1987-04-03 | 1993-10-06 | Fujitsu Limited | Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant |
US4830702A (en) * | 1987-07-02 | 1989-05-16 | General Electric Company | Hollow cathode plasma assisted apparatus and method of diamond synthesis |
JP2597497B2 (ja) * | 1988-01-14 | 1997-04-09 | 洋一 広瀬 | 気相法ダイヤモンドの合成法 |
JPH01203297A (ja) * | 1988-02-09 | 1989-08-16 | Natl Inst For Res In Inorg Mater | 燃焼炎によるダイヤモンドの合成法 |
JPH0255294A (ja) * | 1988-08-18 | 1990-02-23 | Showa Denko Kk | 気相法ダイアモンドの合成法 |
-
1989
- 1989-01-24 JP JP1015456A patent/JPH0794360B2/ja not_active Expired - Fee Related
-
1990
- 1990-01-18 US US07/466,992 patent/US5075096A/en not_active Expired - Lifetime
- 1990-01-19 EP EP90101099A patent/EP0379994B1/de not_active Expired - Lifetime
- 1990-01-19 DE DE9090101099T patent/DE69001485T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5075096A (en) | 1991-12-24 |
EP0379994A1 (de) | 1990-08-01 |
DE69001485D1 (de) | 1993-06-09 |
EP0379994B1 (de) | 1993-05-05 |
JPH0794360B2 (ja) | 1995-10-11 |
JPH02196097A (ja) | 1990-08-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |