DE68927272D1 - Doppelte Heteroübergang-AlGaAs-Elektrolumineszierende Diode mit P-Typ nach oben - Google Patents
Doppelte Heteroübergang-AlGaAs-Elektrolumineszierende Diode mit P-Typ nach obenInfo
- Publication number
- DE68927272D1 DE68927272D1 DE68927272T DE68927272T DE68927272D1 DE 68927272 D1 DE68927272 D1 DE 68927272D1 DE 68927272 T DE68927272 T DE 68927272T DE 68927272 T DE68927272 T DE 68927272T DE 68927272 D1 DE68927272 D1 DE 68927272D1
- Authority
- DE
- Germany
- Prior art keywords
- double
- electroluminescent diode
- type heterojunction
- heterojunction algaas
- algaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/214,997 US4864369A (en) | 1988-07-05 | 1988-07-05 | P-side up double heterojunction AlGaAs light-emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68927272D1 true DE68927272D1 (de) | 1996-10-31 |
DE68927272T2 DE68927272T2 (de) | 1997-02-20 |
Family
ID=22801226
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68927272T Expired - Fee Related DE68927272T2 (de) | 1988-07-05 | 1989-07-03 | Doppelte Heteroübergang-AlGaAs-Elektrolumineszierende Diode mit P-Typ nach oben |
DE68921805T Expired - Fee Related DE68921805T2 (de) | 1988-07-05 | 1989-07-03 | AlGaAs-Elektrolumineszierende Diode mit doppelten Heteroübergang und mit p-Typ nach oben. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68921805T Expired - Fee Related DE68921805T2 (de) | 1988-07-05 | 1989-07-03 | AlGaAs-Elektrolumineszierende Diode mit doppelten Heteroübergang und mit p-Typ nach oben. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4864369A (de) |
EP (2) | EP0350242B1 (de) |
JP (1) | JPH02224282A (de) |
DE (2) | DE68927272T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2212658B (en) * | 1987-11-13 | 1992-02-12 | Plessey Co Plc | Solid state light source |
EP0420695B1 (de) * | 1989-09-29 | 1994-11-17 | Shin-Etsu Handotai Company Limited | Vorrichtung zur Lichtemission bei mehreren Wellenlängen |
US5008718A (en) * | 1989-12-18 | 1991-04-16 | Fletcher Robert M | Light-emitting diode with an electrically conductive window |
DE4031290C2 (de) * | 1990-10-04 | 1994-09-08 | Telefunken Microelectron | Halbleiteranordnung, insbesondere Infrarotdiode und Verfahren zum Herstellen |
JPH04258182A (ja) * | 1991-02-12 | 1992-09-14 | Mitsubishi Electric Corp | 半導体発光装置 |
SE468410B (sv) * | 1991-05-08 | 1993-01-11 | Asea Brown Boveri | Ytlysande lysdiod |
US5164329A (en) * | 1991-09-30 | 1992-11-17 | Motorola, Inc. | Fabricating a low leakage current LED |
US5233204A (en) * | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5442202A (en) * | 1993-10-29 | 1995-08-15 | Mitsubishi Cable Industries, Ltd. | Semiconductor light emitting element |
US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
CA2298491C (en) | 1997-07-25 | 2009-10-06 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
SG85604A1 (en) * | 1998-11-06 | 2002-01-15 | Inst Materials Research & Eng | Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof |
JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
WO2000052796A1 (fr) | 1999-03-04 | 2000-09-08 | Nichia Corporation | Element de laser semiconducteur au nitrure |
US6335547B1 (en) * | 1999-04-27 | 2002-01-01 | Showa Denko K.K. | Epitaxial wafer for infrared light-emitting device and light-emitting device using the same |
DE19962037A1 (de) * | 1999-12-22 | 2001-07-12 | Vishay Semiconductor Gmbh | Leuchtdiode in p-oben-Konfiguration |
JP4570728B2 (ja) * | 2000-04-24 | 2010-10-27 | 昭和電工株式会社 | 半導体発光素子用エピタキシャルウェハ |
DE10039945B4 (de) * | 2000-08-16 | 2006-07-13 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen einer lichtemittierenden Halbleiteranordnung aus GaAIAs mit Doppelheterostruktur und entsprechende Halbleiteranordnung |
DE10103228A1 (de) * | 2001-01-25 | 2002-08-22 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen einer Halbleiteranordnung für ein lichtemittierendes Halbleiterbauelement |
US20040227141A1 (en) * | 2003-01-30 | 2004-11-18 | Epistar Corporation | Light emitting device having a high resistivity cushion layer |
US6903381B2 (en) * | 2003-04-24 | 2005-06-07 | Opto Tech Corporation | Light-emitting diode with cavity containing a filler |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
EP4100999A1 (de) | 2020-02-07 | 2022-12-14 | Signify Holding B.V. | Led-basierte vorrichtung |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3733561A (en) * | 1971-07-27 | 1973-05-15 | Bell Telephone Labor Inc | High power, fundamental transverse mode operation in double heterostructure lasers |
BE791928A (fr) * | 1971-12-01 | 1973-03-16 | Western Electric Co | Corps de semi-conducteur |
JPS5263089A (en) * | 1975-11-19 | 1977-05-25 | Mitsubishi Electric Corp | Semiconductor light emitting device |
JPS5945234B2 (ja) * | 1976-10-12 | 1984-11-05 | サンケン電気株式会社 | GaP 発光ダイオ−ド |
FR2406896A1 (fr) * | 1977-10-18 | 1979-05-18 | Thomson Csf | Diode emettrice et receptrice en lumiere notamment pour telecommunications optiques |
JPS5629382A (en) * | 1979-08-20 | 1981-03-24 | Oki Electric Ind Co Ltd | Light emitting device of double hetero structure and manufacture thereof |
FR2538171B1 (fr) * | 1982-12-21 | 1986-02-28 | Thomson Csf | Diode electroluminescente a emission de surface |
JPS5956780A (ja) * | 1983-08-31 | 1984-04-02 | Hitachi Ltd | 発光ダイオ−ド |
CA1267716A (en) * | 1984-02-23 | 1990-04-10 | Frederick W. Scholl | Edge-emitting light emitting diode |
JPS60193329A (ja) * | 1984-03-15 | 1985-10-01 | Toshiba Corp | 半導体素子の製造方法 |
JPS60253283A (ja) * | 1984-05-29 | 1985-12-13 | Toshiba Corp | 半導体発光素子 |
US4719497A (en) * | 1984-06-15 | 1988-01-12 | Hewlett-Packard Company | High efficiency light-emitting diode |
US4615032A (en) * | 1984-07-13 | 1986-09-30 | At&T Bell Laboratories | Self-aligned rib-waveguide high power laser |
JPH0736449B2 (ja) * | 1984-11-02 | 1995-04-19 | ゼロツクス コーポレーシヨン | 発光ダイオード印刷アレイの製造法 |
JPS6288389A (ja) * | 1985-10-15 | 1987-04-22 | Toshiba Corp | 半導体発光素子 |
JPH0770755B2 (ja) * | 1988-01-21 | 1995-07-31 | 三菱化学株式会社 | 高輝度led用エピタキシャル基板及びその製造方法 |
-
1988
- 1988-07-05 US US07/214,997 patent/US4864369A/en not_active Expired - Lifetime
-
1989
- 1989-07-03 EP EP89306741A patent/EP0350242B1/de not_active Expired - Lifetime
- 1989-07-03 EP EP93202633A patent/EP0576105B1/de not_active Expired - Lifetime
- 1989-07-03 DE DE68927272T patent/DE68927272T2/de not_active Expired - Fee Related
- 1989-07-03 DE DE68921805T patent/DE68921805T2/de not_active Expired - Fee Related
- 1989-07-05 JP JP1173871A patent/JPH02224282A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE68921805D1 (de) | 1995-04-27 |
EP0350242A2 (de) | 1990-01-10 |
EP0576105A3 (en) | 1994-05-18 |
EP0576105A2 (de) | 1993-12-29 |
US4864369A (en) | 1989-09-05 |
DE68921805T2 (de) | 1995-07-13 |
DE68927272T2 (de) | 1997-02-20 |
EP0350242B1 (de) | 1995-03-22 |
EP0350242A3 (en) | 1990-11-22 |
JPH02224282A (ja) | 1990-09-06 |
EP0576105B1 (de) | 1996-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: HEWLETT-PACKARD CO. (N.D.GES.D.STAATES DELAWARE), |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE. LTD., |
|
8339 | Ceased/non-payment of the annual fee |