DE3877283D1 - Feldeffekt-halbleiteranordnung mit einer nebenelektrode. - Google Patents

Feldeffekt-halbleiteranordnung mit einer nebenelektrode.

Info

Publication number
DE3877283D1
DE3877283D1 DE8888401745T DE3877283T DE3877283D1 DE 3877283 D1 DE3877283 D1 DE 3877283D1 DE 8888401745 T DE8888401745 T DE 8888401745T DE 3877283 T DE3877283 T DE 3877283T DE 3877283 D1 DE3877283 D1 DE 3877283D1
Authority
DE
Germany
Prior art keywords
sub
electrode
field effect
semiconductor arrangement
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888401745T
Other languages
English (en)
Other versions
DE3877283T2 (de
Inventor
Daniel Delagebeaudeuf
Henri Derewonko
Jean-Jacques Godart
Patrick Resneau
Pierre Gibeau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Composants Microondes
Original Assignee
Thomson Composants Microondes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Composants Microondes filed Critical Thomson Composants Microondes
Publication of DE3877283D1 publication Critical patent/DE3877283D1/de
Application granted granted Critical
Publication of DE3877283T2 publication Critical patent/DE3877283T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8888401745T 1987-07-31 1988-07-05 Feldeffekt-halbleiteranordnung mit einer nebenelektrode. Expired - Fee Related DE3877283T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8710879A FR2618943B1 (fr) 1987-07-31 1987-07-31 Dispositif semi-conducteur a effet de champ comportant une electrode annexe

Publications (2)

Publication Number Publication Date
DE3877283D1 true DE3877283D1 (de) 1993-02-18
DE3877283T2 DE3877283T2 (de) 1993-05-06

Family

ID=9353765

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888401745T Expired - Fee Related DE3877283T2 (de) 1987-07-31 1988-07-05 Feldeffekt-halbleiteranordnung mit einer nebenelektrode.

Country Status (5)

Country Link
US (1) US4977434A (de)
EP (1) EP0305228B1 (de)
JP (1) JP2549354B2 (de)
DE (1) DE3877283T2 (de)
FR (1) FR2618943B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168329A (en) * 1989-11-06 1992-12-01 Sumitomo Electric Industries, Ltd. Microwave semiconductor device capable of controlling a threshold voltage
US5459343A (en) * 1992-02-21 1995-10-17 Texas Instruments Incorporated Back gate FET microwave switch
EP0959503A1 (de) * 1998-05-11 1999-11-24 Alcatel Alsthom Compagnie Générale d'Electricité Feldeffekt-Transistor, Steuerungsverfahren zum Steuern eines derartigen Feldeffekt-Transistors, und Frequenzmischer-Einrichtung, die einen derartigen Feldeffekt-Transistor beinhaltet
DE60037248T2 (de) * 2000-09-21 2008-10-09 Stmicroelectronics S.R.L., Agrate Brianza Laterale DMOS-Transistoranordnung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141023A (en) * 1973-08-11 1979-02-20 Sony Corporation Field effect transistor having a linear attenuation characteristic and an improved distortion factor with multiple gate drain contacts
US4313126A (en) * 1979-05-21 1982-01-26 Raytheon Company Field effect transistor

Also Published As

Publication number Publication date
EP0305228B1 (de) 1993-01-07
EP0305228A1 (de) 1989-03-01
DE3877283T2 (de) 1993-05-06
US4977434A (en) 1990-12-11
JPH01120066A (ja) 1989-05-12
JP2549354B2 (ja) 1996-10-30
FR2618943B1 (fr) 1989-12-01
FR2618943A1 (fr) 1989-02-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee