DE68919551D1 - Herstellungsverfahren einer grünes Licht emittierenden Diode. - Google Patents

Herstellungsverfahren einer grünes Licht emittierenden Diode.

Info

Publication number
DE68919551D1
DE68919551D1 DE68919551T DE68919551T DE68919551D1 DE 68919551 D1 DE68919551 D1 DE 68919551D1 DE 68919551 T DE68919551 T DE 68919551T DE 68919551 T DE68919551 T DE 68919551T DE 68919551 D1 DE68919551 D1 DE 68919551D1
Authority
DE
Germany
Prior art keywords
light emitting
emitting diode
manufacturing process
green light
green
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919551T
Other languages
English (en)
Other versions
DE68919551T2 (de
Inventor
Masayuki Intellectual Watanabe
Masahiro Intellectual Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68919551D1 publication Critical patent/DE68919551D1/de
Application granted granted Critical
Publication of DE68919551T2 publication Critical patent/DE68919551T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/066—Gp III-V liquid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation
DE68919551T 1988-07-08 1989-07-07 Herstellungsverfahren einer grünes Licht emittierenden Diode. Expired - Fee Related DE68919551T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63170253A JPH0220077A (ja) 1988-07-08 1988-07-08 緑色発光ダイオードの製造方法

Publications (2)

Publication Number Publication Date
DE68919551D1 true DE68919551D1 (de) 1995-01-12
DE68919551T2 DE68919551T2 (de) 1995-05-04

Family

ID=15901513

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68919551T Expired - Fee Related DE68919551T2 (de) 1988-07-08 1989-07-07 Herstellungsverfahren einer grünes Licht emittierenden Diode.

Country Status (5)

Country Link
US (1) US5032539A (de)
EP (1) EP0350058B1 (de)
JP (1) JPH0220077A (de)
KR (1) KR920005131B1 (de)
DE (1) DE68919551T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3624451B2 (ja) * 1995-03-17 2005-03-02 昭和電工株式会社 発光素子用ＧａＰエピタキシャル基板
JP3752451B2 (ja) 2001-12-17 2006-03-08 株式会社日立製作所 沸騰水型原子炉用制御棒の製造方法
US8436362B2 (en) 2009-08-24 2013-05-07 Micron Technology, Inc. Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
US9945048B2 (en) * 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
DK201400055U3 (da) * 2014-03-28 2015-07-10 Plantui Oy Anordning til hydroponisk dyrkning

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868281A (en) * 1968-07-05 1975-02-25 Ibm Luminescent device and method therefor
JPS5331617B2 (de) * 1972-08-21 1978-09-04
US4001056A (en) * 1972-12-08 1977-01-04 Monsanto Company Epitaxial deposition of iii-v compounds containing isoelectronic impurities
US3844904A (en) * 1973-03-19 1974-10-29 Bell Telephone Labor Inc Anodic oxidation of gallium phosphide
US3969164A (en) * 1974-09-16 1976-07-13 Bell Telephone Laboratories, Incorporated Native oxide technique for preparing clean substrate surfaces
US4008106A (en) * 1975-11-13 1977-02-15 The United States Of America As Represented By The Secretary Of The Army Method of fabricating III-V photocathodes
US4032370A (en) * 1976-02-11 1977-06-28 International Audio Visual, Inc. Method of forming an epitaxial layer on a crystalline substrate
JPS5839374B2 (ja) * 1978-12-26 1983-08-30 松下電器産業株式会社 半導体基板の処理方法
JPS5626480A (en) * 1979-08-10 1981-03-14 Oki Electric Ind Co Ltd Semiconductor light emitting device and manufacturing process thereof
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
JPS5916391A (ja) * 1982-07-19 1984-01-27 Matsushita Electric Ind Co Ltd 負性抵抗緑色発光素子の製造方法
JPS5922374A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd 緑色発光ダイオ−ドの製造方法
JPS5922376A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd 純緑色発光ダイオ−ドおよびその製造方法
JPS5923579A (ja) * 1982-07-29 1984-02-07 Matsushita Electric Ind Co Ltd 緑色系発光ダイオ−ドおよびその製造方法
JPS59214276A (ja) * 1983-05-20 1984-12-04 Showa Denko Kk リン化ガリウム緑色発光素子の製造方法
JPS63151086A (ja) * 1986-12-16 1988-06-23 Sanken Electric Co Ltd ガリウム燐緑色発光ダイオ−ドの製造方法

Also Published As

Publication number Publication date
EP0350058A2 (de) 1990-01-10
KR900002474A (ko) 1990-02-28
JPH0220077A (ja) 1990-01-23
KR920005131B1 (ko) 1992-06-26
JPH0531316B2 (de) 1993-05-12
DE68919551T2 (de) 1995-05-04
US5032539A (en) 1991-07-16
EP0350058B1 (de) 1994-11-30
EP0350058A3 (en) 1990-05-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee