DE68913466D1 - Sputtertarget und Verfahren zu seiner Herstellung. - Google Patents

Sputtertarget und Verfahren zu seiner Herstellung.

Info

Publication number
DE68913466D1
DE68913466D1 DE89123704T DE68913466T DE68913466D1 DE 68913466 D1 DE68913466 D1 DE 68913466D1 DE 89123704 T DE89123704 T DE 89123704T DE 68913466 T DE68913466 T DE 68913466T DE 68913466 D1 DE68913466 D1 DE 68913466D1
Authority
DE
Germany
Prior art keywords
production
sputtering target
sputtering
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89123704T
Other languages
English (en)
Other versions
DE68913466T2 (de
Inventor
Michio Satou
Takashi Yamanobe
Mitsuo Kawai
Tatsuzo Kawaguchi
Kazihiko Mitsuhashi
Toshiaki Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68913466D1 publication Critical patent/DE68913466D1/de
Publication of DE68913466T2 publication Critical patent/DE68913466T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/65—Reaction sintering of free metal- or free silicon-containing compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE68913466T 1988-12-21 1989-12-21 Sputtertarget und Verfahren zu seiner Herstellung. Expired - Fee Related DE68913466T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP32242388 1988-12-21
JP32531088 1988-12-23
JP32844188 1988-12-26
JP19434689 1989-07-28
JP19434489 1989-07-28

Publications (2)

Publication Number Publication Date
DE68913466D1 true DE68913466D1 (de) 1994-04-07
DE68913466T2 DE68913466T2 (de) 1994-09-01

Family

ID=27529096

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68913466T Expired - Fee Related DE68913466T2 (de) 1988-12-21 1989-12-21 Sputtertarget und Verfahren zu seiner Herstellung.

Country Status (4)

Country Link
EP (1) EP0374931B1 (de)
JP (1) JP2907907B2 (de)
KR (1) KR940008020B1 (de)
DE (1) DE68913466T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605609A (en) * 1988-03-03 1997-02-25 Asahi Glass Company Ltd. Method for forming low refractive index film comprising silicon dioxide
US5264286A (en) * 1988-03-03 1993-11-23 Asahi Glass Company Ltd. Laminated glass structure
EP0486475B1 (de) * 1988-03-03 1997-12-03 Asahi Glass Company Ltd. Amorpher Oxid-Film und Gegenstand mit einem solchen Film
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
US5209835A (en) * 1988-03-03 1993-05-11 Asahi Glass Company Ltd. Method for producing a specified zirconium-silicon amorphous oxide film composition by sputtering
DE69027590T2 (de) * 1989-08-01 1996-12-05 Asahi Glass Co Ltd Verfahren zur Herstellung von Schichten auf basis von Siliziumdioxyd mittels DC Sputtern und Target dafür
JP2750483B2 (ja) * 1991-11-26 1998-05-13 株式会社 ジャパンエナジー Ｉｔｏスパッタリングターゲット
JPH05214523A (ja) * 1992-02-05 1993-08-24 Toshiba Corp スパッタリングターゲットおよびその製造方法
TW234767B (de) * 1992-09-29 1994-11-21 Nippon En Kk
US5464520A (en) * 1993-03-19 1995-11-07 Japan Energy Corporation Silicide targets for sputtering and method of manufacturing the same
WO1995004167A1 (fr) * 1993-07-27 1995-02-09 Kabushiki Kaisha Toshiba Cible en siliciure metallique a point de fusion eleve, son procede de production, couche en siliciure metallique a point de fusion eleve, et dispositif a semi-conducteurs
WO1995016797A1 (en) * 1993-12-14 1995-06-22 Kabushiki Kaisha Toshiba Molybdenum-tungsten material for wiring, molybdenum-tungsten target for wiring, process for producing the same, and molybdenum-tungsten wiring thin film
WO2000040769A1 (fr) * 1998-12-28 2000-07-13 Japan Energy Corporation Cible de pulverisation cathodique
JP5038553B2 (ja) * 2000-04-27 2012-10-03 株式会社東芝 スパッタリングターゲットの製造方法
JP5036936B2 (ja) * 2001-03-12 2012-09-26 Ｊｘ日鉱日石金属株式会社 ゲート酸化膜形成用シリサイドターゲット及びその製造方法
JP3995082B2 (ja) * 2001-07-18 2007-10-24 日鉱金属株式会社 ゲート酸化膜形成用ハフニウムシリサイドターゲット及びその製造方法
JP4921653B2 (ja) * 2001-08-13 2012-04-25 株式会社東芝 スパッタリングターゲットおよびその製造方法
JP2003066587A (ja) * 2001-08-24 2003-03-05 Shin Etsu Chem Co Ltd スパッタターゲット、並びに該スパッタターゲットを用いた位相シフトマスクブランク及び位相シフトマスクの製造方法
WO2004016825A1 (ja) * 2002-08-06 2004-02-26 Nikko Materials Co., Ltd. ハフニウムシリサイドターゲット及びその製造方法
JP2007051337A (ja) * 2005-08-18 2007-03-01 Ulvac Japan Ltd スパッタ電極及びスパッタ電極を備えたスパッタリング装置
KR20140071058A (ko) * 2012-12-03 2014-06-11 코닝정밀소재 주식회사 롤투롤 스퍼터링 장치
JP6005842B2 (ja) * 2013-03-26 2016-10-12 Ｊｘ金属株式会社 スパッタリング用シリサイドターゲット及びその製造方法
JP6768575B2 (ja) 2017-03-24 2020-10-14 Ｊｘ金属株式会社 タングステンシリサイドターゲット及びその製造方法
EP4129954A4 (de) * 2020-03-26 2024-05-01 Tosoh Corp Cr-si-sinterkörper, sputtertarget und verfahren zur herstellung einer dünnschicht
CN112225565B (zh) * 2020-10-14 2023-01-03 宁波江丰电子材料股份有限公司 一种钨硅靶坯的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832015A (ja) * 1981-08-18 1983-02-24 Shikoku Chem Corp 自由流動性に富む芒硝の製造法
US4619697A (en) * 1984-08-30 1986-10-28 Mitsubishi Kinzoku Kabushiki Kaisha Sputtering target material and process for producing the same
JPS61141673A (ja) * 1984-12-13 1986-06-28 東京タングステン株式会社 モリブデンシリサイド合金焼結体及びその製造方法
JPS61141674A (ja) * 1984-12-13 1986-06-28 東京タングステン株式会社 タングステンシリサイド合金焼結体及びその製造方法
US4663120A (en) * 1985-04-15 1987-05-05 Gte Products Corporation Refractory metal silicide sputtering target
JPH0791636B2 (ja) * 1987-03-09 1995-10-04 日立金属株式会社 スパツタリングタ−ゲツトおよびその製造方法
JPH01198471A (ja) * 1988-02-04 1989-08-10 Mitsubishi Metal Corp 半導体デバイスのゲート電極薄膜形成用スパッタリング・ターゲット材

Also Published As

Publication number Publication date
JPH03130360A (ja) 1991-06-04
KR900010932A (ko) 1990-07-11
EP0374931B1 (de) 1994-03-02
KR940008020B1 (ko) 1994-08-31
EP0374931A3 (de) 1991-05-15
JP2907907B2 (ja) 1999-06-21
DE68913466T2 (de) 1994-09-01
EP0374931A2 (de) 1990-06-27

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Free format text: SATOU, MICHIO, KANAGAWA-KU YOKOHAMA-SHI KANAGAWA-KEN, JP YAMANOBE, TAKASHI, YOKOHAMA-SHI KANAGAWA-KEN, JP KAWAI, MITSUO, SEYA-KU, YOKOHAMA-SHI, JP KAWAGUCHI, TATSUZO, YOKOHAMA-SHI KANAGAWA-KEN, JP MITSUHASHI, KAZUHIKO, CHIGASAKI-SHI KANAGAWA-KEN, JP MIZUTANI, TOSHIAKI, YOKOHAMA-SHI KANAGAWA-KEN, JP

8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 81245 MUENCHEN

8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8339 Ceased/non-payment of the annual fee