DE60335409D1 - Verfahren zur bestimmung derpunktdefektverteilung eines siliciumeinkristallstabs - Google Patents

Verfahren zur bestimmung derpunktdefektverteilung eines siliciumeinkristallstabs

Info

Publication number
DE60335409D1
DE60335409D1 DE60335409T DE60335409T DE60335409D1 DE 60335409 D1 DE60335409 D1 DE 60335409D1 DE 60335409 T DE60335409 T DE 60335409T DE 60335409 T DE60335409 T DE 60335409T DE 60335409 D1 DE60335409 D1 DE 60335409D1
Authority
DE
Germany
Prior art keywords
incredible
stain
silicon
determining
point defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335409T
Other languages
English (en)
Inventor
Kazunari Kurita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Application granted granted Critical
Publication of DE60335409D1 publication Critical patent/DE60335409D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B24/00—Use of organic materials as active ingredients for mortars, concrete or artificial stone, e.g. plasticisers
    • C04B24/003—Phosphorus-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B28/00—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements
    • C04B28/14—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements containing calcium sulfate cements
    • C04B28/145—Calcium sulfate hemi-hydrate with a specific crystal form
    • C04B28/146—Calcium sulfate hemi-hydrate with a specific crystal form alpha-hemihydrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00836—Uses not provided for elsewhere in C04B2111/00 for medical or dental applications
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
DE60335409T 2002-10-18 2003-10-17 Verfahren zur bestimmung derpunktdefektverteilung eines siliciumeinkristallstabs Expired - Lifetime DE60335409D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002304410 2002-10-18
PCT/JP2003/013320 WO2004035879A1 (ja) 2002-10-18 2003-10-17 シリコン単結晶インゴットの点欠陥分布を測定する方法

Publications (1)

Publication Number Publication Date
DE60335409D1 true DE60335409D1 (de) 2011-01-27

Family

ID=32105109

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60335409T Expired - Lifetime DE60335409D1 (de) 2002-10-18 2003-10-17 Verfahren zur bestimmung derpunktdefektverteilung eines siliciumeinkristallstabs
DE03756681T Pending DE03756681T1 (de) 2002-10-18 2003-10-17 Verfahren zur bestimmung der punktdefektverteilung eines silicium-einkristallstabs

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE03756681T Pending DE03756681T1 (de) 2002-10-18 2003-10-17 Verfahren zur bestimmung der punktdefektverteilung eines silicium-einkristallstabs

Country Status (7)

Country Link
US (1) US7244306B2 (de)
EP (2) EP1559812B1 (de)
KR (1) KR100722089B1 (de)
AU (1) AU2003301326A1 (de)
DE (2) DE60335409D1 (de)
TW (1) TWI231357B (de)
WO (1) WO2004035879A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005073439A1 (ja) * 2004-02-02 2005-08-11 Shin-Etsu Handotai Co., Ltd. シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法
JP4743010B2 (ja) * 2005-08-26 2011-08-10 株式会社Ｓｕｍｃｏ シリコンウェーハの表面欠陥評価方法
KR100818670B1 (ko) * 2006-09-25 2008-04-01 주식회사 실트론 금속 오염과 열처리를 이용한 단결정 실리콘의 결정 결함영역 구분 방법
DE102007044924A1 (de) * 2006-09-25 2008-06-12 Siltron Inc., Gumi Verfahren des Identifizierens von Kristalldefektbereichen in monokristallinem Silizium unter Verwendung von Metalldotierung und Wärmebehandlung
US8008107B2 (en) * 2006-12-30 2011-08-30 Calisolar, Inc. Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation
JP5659632B2 (ja) * 2010-08-27 2015-01-28 株式会社Sumco ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法
KR101242353B1 (ko) * 2011-06-28 2013-03-15 주식회사 엘지실트론 실리콘 웨이퍼의 결함 평가 방법
KR101339624B1 (ko) * 2012-09-07 2013-12-09 주식회사 엘지실트론 단결정 실리콘 웨이퍼 및 반도체 웨이퍼
KR101525657B1 (ko) * 2013-01-08 2015-06-03 주식회사 엘지실트론 실리콘 단결정 웨이퍼 및 그 제조 방법
JP6266653B2 (ja) * 2013-01-08 2018-01-24 エスケー シルトロン カンパニー リミテッド シリコン単結晶ウェハ
JP6036670B2 (ja) * 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法
JP7057122B2 (ja) 2017-12-22 2022-04-19 グローバルウェーハズ・ジャパン株式会社 金属汚染評価方法
JP6852703B2 (ja) * 2018-03-16 2021-03-31 信越半導体株式会社 炭素濃度評価方法
JP7345379B2 (ja) * 2019-12-06 2023-09-15 株式会社ディスコ ゲッタリング性評価装置
CN113782465B (zh) * 2021-11-11 2022-02-18 西安奕斯伟材料科技有限公司 用于检测晶圆表面金属的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5418172A (en) * 1993-06-29 1995-05-23 Memc Electronic Materials S.P.A. Method for detecting sources of contamination in silicon using a contamination monitor wafer
KR19980070037A (ko) * 1997-02-13 1998-10-26 윤종용 반도체 잉곳 성장시 시드결정의 인상속도 최적화방법, 이를 적용한 반도체 잉곳 성장방법, 그에 따라 성장된 반도체 잉곳과반도체 웨이퍼 및 반도체장치
US6045610A (en) 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
SG64470A1 (en) 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
DE69813041T2 (de) * 1997-04-09 2004-01-15 Memc Electronic Materials Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
EP0973962B1 (de) * 1997-04-09 2002-07-03 MEMC Electronic Materials, Inc. Silicium mit niedriger fehlerdichte und idealem sauerstoffniederschlag
KR100252214B1 (ko) 1997-04-23 2000-04-15 윤종용 반도체장치 제조용 베어 웨이퍼 분석방법
JP2001102385A (ja) 1999-07-28 2001-04-13 Mitsubishi Materials Silicon Corp 点欠陥の凝集体が存在しないシリコンウェーハ
SE0000095L (sv) * 2000-01-14 2001-07-15 Electrolux Ab Spjäll för reglering av tillsatsluft till tvåtakts förbränningsmotorer
ATE265089T1 (de) * 2000-02-11 2004-05-15 Dow Corning Ireland Ltd Eine plasmaanlage mit atmosphärischem druck
JP3890861B2 (ja) 2000-07-31 2007-03-07 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ方法
US7074271B2 (en) * 2004-02-23 2006-07-11 Sumitomo Mitsubishi Silicon Corporation Method of identifying defect distribution in silicon single crystal ingot

Also Published As

Publication number Publication date
WO2004035879A1 (ja) 2004-04-29
US20060130738A1 (en) 2006-06-22
KR100722089B1 (ko) 2007-05-25
EP1559812A4 (de) 2008-06-25
DE03756681T1 (de) 2005-12-29
EP1559812B1 (de) 2010-12-15
AU2003301326A1 (en) 2004-05-04
EP1559812A1 (de) 2005-08-03
EP2077346A2 (de) 2009-07-08
EP2077346B1 (de) 2012-09-26
KR20050067417A (ko) 2005-07-01
US7244306B2 (en) 2007-07-17
EP2077346A3 (de) 2010-02-24
TW200412421A (en) 2004-07-16
TWI231357B (en) 2005-04-21

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