DE60332952D1 - Halbleiterbeschleunigungssensor und prozess zu seiner herstellung - Google Patents

Halbleiterbeschleunigungssensor und prozess zu seiner herstellung

Info

Publication number
DE60332952D1
DE60332952D1 DE60332952T DE60332952T DE60332952D1 DE 60332952 D1 DE60332952 D1 DE 60332952D1 DE 60332952 T DE60332952 T DE 60332952T DE 60332952 T DE60332952 T DE 60332952T DE 60332952 D1 DE60332952 D1 DE 60332952D1
Authority
DE
Germany
Prior art keywords
manufacture
acceleration sensor
semiconductor acceleration
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60332952T
Other languages
English (en)
Inventor
Y Nakamizo
T Sawai
M Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hokuriku Electric Industry Co Ltd
Original Assignee
Hokuriku Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hokuriku Electric Industry Co Ltd filed Critical Hokuriku Electric Industry Co Ltd
Application granted granted Critical
Publication of DE60332952D1 publication Critical patent/DE60332952D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
DE60332952T 2002-10-04 2003-10-03 Halbleiterbeschleunigungssensor und prozess zu seiner herstellung Expired - Lifetime DE60332952D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002292782A JP4422395B2 (ja) 2002-10-04 2002-10-04 半導体加速度センサの製造方法
PCT/JP2003/012733 WO2004031781A1 (ja) 2002-10-04 2003-10-03 半導体加速度センサ及びその製造方法

Publications (1)

Publication Number Publication Date
DE60332952D1 true DE60332952D1 (de) 2010-07-22

Family

ID=32063927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60332952T Expired - Lifetime DE60332952D1 (de) 2002-10-04 2003-10-03 Halbleiterbeschleunigungssensor und prozess zu seiner herstellung

Country Status (6)

Country Link
US (1) US7122396B2 (de)
EP (1) EP1560029B1 (de)
JP (1) JP4422395B2 (de)
AU (1) AU2003271094A1 (de)
DE (1) DE60332952D1 (de)
WO (1) WO2004031781A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2447386B (en) * 2005-12-20 2010-08-04 Hokuriku Elect Ind Semiconductor sensor and manufacturing method of sensor body for semiconductor sensor
US8258799B2 (en) * 2008-11-07 2012-09-04 The Charles Stark Draper Laboratory, Inc. MEMS dosimeter
US20100162823A1 (en) * 2008-12-26 2010-07-01 Yamaha Corporation Mems sensor and mems sensor manufacture method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891985A (en) * 1985-07-22 1990-01-09 Honeywell Inc. Force sensor with attached mass
JPH0677052B2 (ja) * 1988-04-14 1994-09-28 株式会社ワコー 磁気検出装置
WO1991010118A1 (en) * 1989-12-28 1991-07-11 Wacoh Corporation Apparatus for detecting physical quantity that acts as external force and method of testing and producing this apparatus
JPH05256869A (ja) * 1992-03-12 1993-10-08 Murata Mfg Co Ltd 半導体式加速度センサおよびその製造方法
JPH05322919A (ja) * 1992-05-25 1993-12-07 Fujikura Ltd 多次元半導体加速度センサの構造
JP3290047B2 (ja) * 1995-03-15 2002-06-10 松下電工株式会社 加速度センサ及びその製造方法
US6332359B1 (en) * 1997-04-24 2001-12-25 Fuji Electric Co., Ltd. Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor
JP3282570B2 (ja) * 1997-11-28 2002-05-13 松下電工株式会社 半導体加速度センサ
JP2001326367A (ja) * 2000-05-12 2001-11-22 Denso Corp センサおよびその製造方法

Also Published As

Publication number Publication date
EP1560029A4 (de) 2008-05-07
JP2004125704A (ja) 2004-04-22
WO2004031781A1 (ja) 2004-04-15
EP1560029B1 (de) 2010-06-09
AU2003271094A1 (en) 2004-04-23
US20060094148A1 (en) 2006-05-04
JP4422395B2 (ja) 2010-02-24
EP1560029A1 (de) 2005-08-03
US7122396B2 (en) 2006-10-17

Similar Documents

Publication Publication Date Title
DE60325690D1 (de) Halbleiterbauelement und verfahren zu seiner herstellung
DE602004021927D1 (de) Halbleiterbauelement und verfahren zu seiner herstellung
DE60312583D1 (de) Drucksensor und Verfahren zu seiner Herstellung
DE50214717D1 (de) Und verfahren zu seiner herstellung
DE60337036D1 (de) Halbleiterbauelement und verfahren zu seiner herstellung
DE50310806D1 (de) Hochreines fumed silica-pulver und verfahren zu seiner herstellung
DE60324888D1 (de) und Herstellungsverfahren
DE60133303D1 (de) Halbleitergrundmaterial und verfahren zu seiner herstellung
DE602005013692D1 (de) Halbleiterbauelement und verfahren zu seiner herstellung
DE60239464D1 (de) Piezoelektrisches porzellan und verfahren zu seiner herstellung
DE602004009821D1 (de) Halbleiterbauelement und Herstellungsverfahren dafür
DE602004013489D1 (de) Halbleiter-Speicherbauelement und Verfahren zur Herstellung desselben
DE60208263D1 (de) Gasdurchlässiger Stopfen und Verfahren zu seiner Herstellung
DE60229382D1 (de) Halbleiterbauelement auf gruppe-iii-nitrid-basis und verfahren zu seiner herstellung
DE60313797D1 (de) Halbleiter-Lichtemissionsbauelement und Verfahren zu seiner Herstellung
DE602004015020D1 (de) Harzverkapselter elektronischer Bauteil und Verfahren zu seiner Herstellung
DE502005009369D1 (de) Monolithisch integrierte hybridisierungs-sensor-anordnung und verfahren zu deren herstellung
EP1598673A4 (de) Beschleunigungssensor und neigungserfassungsverfahren
DE60239493D1 (de) Halbleiterbauelement und verfahren zu seiner herstellung
DE60335812D1 (de) Biosensor und verfahren zu seiner herstellung
DE60309411D1 (de) Pollensensor und Verfahren
DE60238703D1 (de) Photokatalysator und verfahren zu seiner herstellung
DE60233077D1 (de) Halbleiterbauelement und verfahren zu seiner herstellung
DE602004028894D1 (de) Sensor und Verfahren zur Herstellung desselben
DE60332542D1 (de) Siliciumcarbid-einkristall und verfahren und vorrichtung zu seiner herstellung