DE60326955D1 - Halbleiterabbildungseinrichtung und halbleiterabbildungsarray - Google Patents

Halbleiterabbildungseinrichtung und halbleiterabbildungsarray

Info

Publication number
DE60326955D1
DE60326955D1 DE60326955T DE60326955T DE60326955D1 DE 60326955 D1 DE60326955 D1 DE 60326955D1 DE 60326955 T DE60326955 T DE 60326955T DE 60326955 T DE60326955 T DE 60326955T DE 60326955 D1 DE60326955 D1 DE 60326955D1
Authority
DE
Germany
Prior art keywords
semiconductor imaging
array
imaging device
semiconductor
imaging array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60326955T
Other languages
English (en)
Inventor
Kazuhisa Miyaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Application granted granted Critical
Publication of DE60326955D1 publication Critical patent/DE60326955D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/1485—Frame transfer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
DE60326955T 2002-05-27 2003-05-02 Halbleiterabbildungseinrichtung und halbleiterabbildungsarray Expired - Lifetime DE60326955D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002153035A JP4246964B2 (ja) 2002-05-27 2002-05-27 固体撮像装置及び固体撮像装置アレイ
PCT/JP2003/005610 WO2003100862A1 (fr) 2002-05-27 2003-05-02 Dispositif de formation d'images a semi-conducteurs et reseau d'imageurs a semi-conducteurs

Publications (1)

Publication Number Publication Date
DE60326955D1 true DE60326955D1 (de) 2009-05-14

Family

ID=29561286

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60326955T Expired - Lifetime DE60326955D1 (de) 2002-05-27 2003-05-02 Halbleiterabbildungseinrichtung und halbleiterabbildungsarray

Country Status (6)

Country Link
US (1) US7193252B2 (de)
EP (1) EP1515370B1 (de)
JP (1) JP4246964B2 (de)
AU (1) AU2003231373A1 (de)
DE (1) DE60326955D1 (de)
WO (1) WO2003100862A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005241513A (ja) * 2004-02-27 2005-09-08 Rigaku Corp Ｃｃｄセンサの制御方法及び装置並びにｘ線回折装置
JP4714502B2 (ja) * 2005-04-26 2011-06-29 パナソニック株式会社 固体撮像装置
US20060267059A1 (en) * 2005-05-25 2006-11-30 Macronix International Co., Ltd. Peripheral circuit architecture for array memory
JP4731278B2 (ja) * 2005-10-25 2011-07-20 パナソニック株式会社 固体撮像素子の駆動法方法
JP5000258B2 (ja) * 2006-10-18 2012-08-15 浜松ホトニクス株式会社 固体撮像装置
JP5470928B2 (ja) * 2009-03-11 2014-04-16 ソニー株式会社 固体撮像装置の製造方法
JP2011056170A (ja) * 2009-09-14 2011-03-24 Fujifilm Corp Ｘ線撮影システム及びその制御方法
JP6110154B2 (ja) 2013-02-13 2017-04-05 浜松ホトニクス株式会社 固体撮像装置及び固体撮像装置の製造方法
US10903258B2 (en) * 2017-10-11 2021-01-26 Kla Corporation Image sensors with grounded or otherwise biased channel-stop contacts
JP6788648B2 (ja) * 2018-10-24 2020-11-25 キヤノン株式会社 放射線撮影装置、放射線撮影方法及びプログラム

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
JPS57188183A (en) * 1981-05-15 1982-11-19 Canon Inc Solid-state image pickup device
US4689687A (en) * 1984-11-13 1987-08-25 Hitachi, Ltd. Charge transfer type solid-state imaging device
JPS62220807A (ja) * 1986-03-20 1987-09-29 Toshiba Corp スタ−スキヤナ
US4972254A (en) 1987-02-24 1990-11-20 Kabushiki Kaisha Toshiba Solid state image sensors for reproducing high definition images
JP2880026B2 (ja) * 1992-08-28 1999-04-05 富士写真フイルム株式会社 Ｃｃｄ撮像装置とその駆動方法
JP3203060B2 (ja) 1992-08-28 2001-08-27 浜松ホトニクス株式会社 放射線検出器
US5483090A (en) * 1993-04-09 1996-01-09 Sanyo Electric Co., Ltd. Solid-state image pickup device and method for manufacturing such device
JP3310404B2 (ja) * 1993-07-23 2002-08-05 浜松ホトニクス株式会社 冷却型固体撮像装置
JP2701726B2 (ja) * 1993-12-28 1998-01-21 日本電気株式会社 固体撮像装置
JP3334992B2 (ja) * 1994-02-22 2002-10-15 浜松ホトニクス株式会社 Ｃｃｄ固体撮像装置および製造方法
US5530475A (en) * 1994-11-30 1996-06-25 Eastman Kodak Company Image sensor with oversized vertical shift registers for marker pixel generation
US5821547A (en) * 1997-03-10 1998-10-13 Talmi; Yair Temporal filter using interline charged coupled device
DE19818975A1 (de) * 1997-08-12 1999-02-18 Hewlett Packard Co Verfahren zum Korrigieren des Dunkelstroms in CMOS-Bilderzeugungssensoren
JP3426935B2 (ja) 1997-10-21 2003-07-14 三洋電機株式会社 固体撮像素子及び固体撮像素子の製造方法
JP4271753B2 (ja) 1998-09-21 2009-06-03 浜松ホトニクス株式会社 固体撮像装置
JP2000069373A (ja) * 1999-08-23 2000-03-03 Hamamatsu Photonics Kk Ｃｃｄ固体撮像装置
DE60045484D1 (de) * 1999-09-30 2011-02-17 Shimadzu Corp Ultraschnelles bildaufnahmegerät
EP1102323B1 (de) 1999-11-19 2012-08-15 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Verfahren zum Detektieren von elektromagnetischer Strahlung mittels eines optoelektronischen Sensors
US6744526B2 (en) * 2001-02-09 2004-06-01 Eastman Kodak Company Image sensor having black pixels disposed in a spaced-apart relationship from the active pixels
JP2002289822A (ja) * 2001-03-23 2002-10-04 Hamamatsu Photonics Kk Ｘ線ｃｃｄ
US7218351B2 (en) * 2002-04-05 2007-05-15 Victor Company Of Japan, Limited Image-sensing apparatus for compensating video signal of a plurality of channels
US9386241B2 (en) * 2003-07-02 2016-07-05 Verity Instruments, Inc. Apparatus and method for enhancing dynamic range of charge coupled device-based spectrograph

Also Published As

Publication number Publication date
JP2003347539A (ja) 2003-12-05
US7193252B2 (en) 2007-03-20
EP1515370A4 (de) 2006-03-15
EP1515370B1 (de) 2009-04-01
JP4246964B2 (ja) 2009-04-02
EP1515370A1 (de) 2005-03-16
AU2003231373A1 (en) 2003-12-12
WO2003100862A1 (fr) 2003-12-04
US20050151169A1 (en) 2005-07-14

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Legal Events

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