DE60318173D1 - Verfahren zur Abscheidung von Atomschichten aus Metallen - Google Patents

Verfahren zur Abscheidung von Atomschichten aus Metallen

Info

Publication number
DE60318173D1
DE60318173D1 DE60318173T DE60318173T DE60318173D1 DE 60318173 D1 DE60318173 D1 DE 60318173D1 DE 60318173 T DE60318173 T DE 60318173T DE 60318173 T DE60318173 T DE 60318173T DE 60318173 D1 DE60318173 D1 DE 60318173D1
Authority
DE
Germany
Prior art keywords
metal
film
metals
deposition
metal halide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60318173T
Other languages
English (en)
Other versions
DE60318173T2 (de
Inventor
John Anthony Thomas Norman
David Allen Roberts
Melanie Anne Boze
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of DE60318173D1 publication Critical patent/DE60318173D1/de
Application granted granted Critical
Publication of DE60318173T2 publication Critical patent/DE60318173T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/60—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
DE60318173T 2002-11-05 2003-11-04 Verfahren zur Abscheidung von Atomschichten aus Metallen Expired - Fee Related DE60318173T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US287903 1999-04-07
US28790302A 2002-11-05 2002-11-05
US324781 2002-12-20
US10/324,781 US6869876B2 (en) 2002-11-05 2002-12-20 Process for atomic layer deposition of metal films

Publications (2)

Publication Number Publication Date
DE60318173D1 true DE60318173D1 (de) 2008-01-31
DE60318173T2 DE60318173T2 (de) 2008-04-10

Family

ID=32314358

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60318173T Expired - Fee Related DE60318173T2 (de) 2002-11-05 2003-11-04 Verfahren zur Abscheidung von Atomschichten aus Metallen

Country Status (7)

Country Link
US (1) US6869876B2 (de)
EP (1) EP1426463B1 (de)
JP (1) JP4113099B2 (de)
KR (1) KR100639640B1 (de)
AT (1) ATE381628T1 (de)
DE (1) DE60318173T2 (de)
TW (1) TWI240970B (de)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US7494927B2 (en) * 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6989172B2 (en) * 2003-01-27 2006-01-24 Micell Technologies, Inc. Method of coating microelectronic substrates
US7205960B2 (en) 2003-02-19 2007-04-17 Mirage Innovations Ltd. Chromatic planar optic display system
US7534967B2 (en) * 2003-02-25 2009-05-19 University Of North Texas Conductor structures including penetrable materials
US6951813B2 (en) * 2003-04-04 2005-10-04 Micron Technology, Inc. Methods of forming metal-containing layers including a metal bonded to halogens and trialkylaluminum
US7311946B2 (en) 2003-05-02 2007-12-25 Air Products And Chemicals, Inc. Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
US7067407B2 (en) * 2003-08-04 2006-06-27 Asm International, N.V. Method of growing electrical conductors
US7048968B2 (en) * 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
KR100528069B1 (ko) * 2003-09-02 2005-11-15 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
US7312163B2 (en) * 2003-09-24 2007-12-25 Micron Technology, Inc. Atomic layer deposition methods, and methods of forming materials over semiconductor substrates
US20050085031A1 (en) * 2003-10-15 2005-04-21 Applied Materials, Inc. Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
US7419702B2 (en) * 2004-03-31 2008-09-02 Tokyo Electron Limited Method for processing a substrate
US20080166870A1 (en) * 2004-06-04 2008-07-10 International Business Machines Corporation Fabrication of Interconnect Structures
KR100602087B1 (ko) * 2004-07-09 2006-07-14 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US7294851B2 (en) * 2004-11-03 2007-11-13 Infineon Technologies Ag Dense seed layer and method of formation
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
US7034169B1 (en) 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US7573640B2 (en) * 2005-04-04 2009-08-11 Mirage Innovations Ltd. Multi-plane optical apparatus
US8435905B2 (en) * 2005-06-13 2013-05-07 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device, and substrate processing apparatus
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US7314828B2 (en) * 2005-07-19 2008-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Repairing method for low-k dielectric materials
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
EP1942364A1 (de) 2005-09-14 2008-07-09 Mirage Innovations Ltd. Diffraktives optisches Relais und Herstellungsverfahren dafür
US20090128911A1 (en) * 2005-09-14 2009-05-21 Moti Itzkovitch Diffraction Grating With a Spatially Varying Duty-Cycle
US20080043334A1 (en) * 2006-08-18 2008-02-21 Mirage Innovations Ltd. Diffractive optical relay and method for manufacturing the same
ATE422679T1 (de) * 2005-11-03 2009-02-15 Mirage Innovations Ltd Binokulare optische relaiseinrichtung
JP4975414B2 (ja) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Ｃｖｄ又はａｌｄによる膜の堆積のための方法
WO2008023375A1 (en) * 2006-08-23 2008-02-28 Mirage Innovations Ltd. Diffractive optical relay device with improved color uniformity
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
KR100807216B1 (ko) * 2006-09-29 2008-02-28 삼성전자주식회사 두께 균일성을 향상할 수 있는 박막 형성 장치 및 방법
US7692222B2 (en) * 2006-11-07 2010-04-06 Raytheon Company Atomic layer deposition in the formation of gate structures for III-V semiconductor
US20080124484A1 (en) * 2006-11-08 2008-05-29 Asm Japan K.K. Method of forming ru film and metal wiring structure
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US7638170B2 (en) * 2007-06-21 2009-12-29 Asm International N.V. Low resistivity metal carbonitride thin film deposition by atomic layer deposition
WO2009037706A1 (en) * 2007-09-18 2009-03-26 Mirage Innovations Ltd. Slanted optical device
US8017183B2 (en) * 2007-09-26 2011-09-13 Eastman Kodak Company Organosiloxane materials for selective area deposition of inorganic materials
US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
US20090130466A1 (en) * 2007-11-16 2009-05-21 Air Products And Chemicals, Inc. Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
US9157150B2 (en) * 2007-12-04 2015-10-13 Cypress Semiconductor Corporation Method of operating a processing chamber used in forming electronic devices
DE102007058571B4 (de) 2007-12-05 2012-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens
US8993051B2 (en) 2007-12-12 2015-03-31 Technische Universiteit Delft Method for covering particles, especially a battery electrode material particles, and particles obtained with such method and a battery comprising such particle
US7655564B2 (en) * 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
KR20090067505A (ko) * 2007-12-21 2009-06-25 에이에스엠지니텍코리아 주식회사 루테늄막 증착 방법
US7799674B2 (en) * 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8084104B2 (en) * 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
JP5384291B2 (ja) 2008-11-26 2014-01-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8557702B2 (en) 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
KR20120023040A (ko) * 2009-04-29 2012-03-12 어플라이드 머티어리얼스, 인코포레이티드 ＨＶＰＥ에서 인-시튜 사전-ＧａＮ 증착 층을 형성하는 방법
US20110020546A1 (en) * 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
WO2012005722A1 (en) * 2010-07-06 2012-01-12 Zettacore, Inc. Methods of treating metal surfaces and devices formed thereby
US8329569B2 (en) * 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US20120070981A1 (en) * 2010-09-17 2012-03-22 Clendenning Scott B Atomic layer deposition of a copper-containing seed layer
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US9005705B2 (en) * 2011-09-14 2015-04-14 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method
WO2014210328A1 (en) * 2013-06-26 2014-12-31 Applied Materials, Inc. Methods of depositing a metal alloy film
EP3366808B1 (de) * 2013-06-28 2023-10-25 Wayne State University Verfahren zur schichtbildung auf einem substrat
JP6147693B2 (ja) * 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
US9607842B1 (en) * 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
TWI839906B (zh) * 2017-08-30 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 層形成方法
KR102103346B1 (ko) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법.
US11505865B2 (en) * 2018-07-12 2022-11-22 Basf Se Process for the generation of metal- or semimetal-containing films
CN109273402B (zh) * 2018-09-13 2020-08-25 德淮半导体有限公司 金属阻挡层的制作方法、金属互连结构及其制作方法
JP2020132904A (ja) * 2019-02-13 2020-08-31 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN112652677B (zh) * 2020-12-09 2023-10-27 晋能光伏技术有限责任公司 一种perc电池背面钝化工艺
TW202235654A (zh) * 2021-02-16 2022-09-16 美商應用材料股份有限公司 用於原子層沉積之還原劑
US20230317634A1 (en) * 2022-04-05 2023-10-05 Applied Materials, Inc. Coatings with diffusion barriers for corrosion and contamination protection

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306666A (en) * 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
US6475276B1 (en) * 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
WO2001066832A2 (en) 2000-03-07 2001-09-13 Asm America, Inc. Graded thin films
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
WO2001088972A1 (en) 2000-05-15 2001-11-22 Asm Microchemistry Oy Process for producing integrated circuits
US6368954B1 (en) 2000-07-28 2002-04-09 Advanced Micro Devices, Inc. Method of copper interconnect formation using atomic layer copper deposition
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US20020117399A1 (en) 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via

Also Published As

Publication number Publication date
TWI240970B (en) 2005-10-01
EP1426463A1 (de) 2004-06-09
KR20040040376A (ko) 2004-05-12
KR100639640B1 (ko) 2006-10-30
TW200408007A (en) 2004-05-16
ATE381628T1 (de) 2008-01-15
JP4113099B2 (ja) 2008-07-02
US20040087143A1 (en) 2004-05-06
EP1426463B1 (de) 2007-12-19
JP2004156141A (ja) 2004-06-03
DE60318173T2 (de) 2008-04-10
US6869876B2 (en) 2005-03-22

Similar Documents

Publication Publication Date Title
DE60318173D1 (de) Verfahren zur Abscheidung von Atomschichten aus Metallen
TW200606168A (en) Copper (I) compounds useful as deposition precursors of copper thin films
TW200503076A (en) III-V compound semiconductor crystal and method for production thereof
DE60129380D1 (de) Vorrichtung und Verfahren zum Auftragen einer Dünnschicht auf einen Wafer durch Abscheidung von atomaren Schichten
TWI263676B (en) Compositions for chemically treating a substrate using foam technology
MY139973A (en) Coated substrate with a curved surface, and a method for production of a coated substrate such as this
TW200506091A (en) Process for depositing film, process for fabricating semiconductor device, semiconductor device and system for depositing film
TW200520099A (en) Method of forming a metal layer using an intermittent precursor gas flow process
TW200609667A (en) Photomask blank, photomask and method for manufacturing same
AU2003266489A1 (en) Corrosion protection on metals
WO2004020689A3 (en) Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
EP1464727A3 (de) Oxidbeschichtetes Schneidwerkzeug
ATE505816T1 (de) Verfahren zur herstellung eines indium-gallium- aluminium-nitrid-dünnfilms auf einem siliziumsubstrat
WO2003095701A8 (en) Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition
WO2005049887A3 (en) Methods for the deposition of silver oxide films and patterned films
ATE378441T1 (de) Verfahren zur synthese einer verbindung der formel m sb n+1 /sb ax sb n /sb, film aus der verbindung und verwendung davon
EP1313744A4 (de) Reagenzzusammensetzung und verfahren zur bildung von metallschichten auf substraten mittels chemischer gasphasenabscheidung
TW200801857A (en) Photoresist stripping liquid and method for processing substrate using the liquid
BRPI0414547A (pt) metalização de substrato(s) por um processo de deposição lìquido/vapor
TW200517263A (en) Method of selecting photomask blank substrates
TW200622024A (en) Copper(I) complexes for deposition of copper films by atomic layer deposition
ATE334938T1 (de) Verfahren zur herstellung von organohalogensilanen aus amorphem silizium
TW200519197A (en) Tungsten metal removing solution and method for removing tungsten metal by use thereof
JP2006259293A (ja) フォトマスク用ブランクの製造方法とフォトマスク用ブランクおよびフォトマスクの製造方法とフォトマスク
JP2008162885A (ja) 超音波エネルギーを利用したＺｎＯナノワイヤの製造方法

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee