ATE378441T1 - Verfahren zur synthese einer verbindung der formel m sb n+1 /sb ax sb n /sb, film aus der verbindung und verwendung davon - Google Patents

Verfahren zur synthese einer verbindung der formel m sb n+1 /sb ax sb n /sb, film aus der verbindung und verwendung davon

Info

Publication number
ATE378441T1
ATE378441T1 AT02791162T AT02791162T ATE378441T1 AT E378441 T1 ATE378441 T1 AT E378441T1 AT 02791162 T AT02791162 T AT 02791162T AT 02791162 T AT02791162 T AT 02791162T AT E378441 T1 ATE378441 T1 AT E378441T1
Authority
AT
Austria
Prior art keywords
sub
compound
synthesizing
formula
film
Prior art date
Application number
AT02791162T
Other languages
English (en)
Inventor
Peter Isberg
Jens-Petter Palmquist
Ulf Jansson
Lars Hultman
Jens Birch
Timo Seppaenen
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Application granted granted Critical
Publication of ATE378441T1 publication Critical patent/ATE378441T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Wire Bonding (AREA)
AT02791162T 2001-11-30 2002-12-02 Verfahren zur synthese einer verbindung der formel m sb n+1 /sb ax sb n /sb, film aus der verbindung und verwendung davon ATE378441T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0104044 2001-11-30

Publications (1)

Publication Number Publication Date
ATE378441T1 true ATE378441T1 (de) 2007-11-15

Family

ID=20286174

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02791162T ATE378441T1 (de) 2001-11-30 2002-12-02 Verfahren zur synthese einer verbindung der formel m sb n+1 /sb ax sb n /sb, film aus der verbindung und verwendung davon

Country Status (8)

Country Link
US (1) US7402206B2 (de)
EP (1) EP1448804B1 (de)
CN (1) CN100439554C (de)
AT (1) ATE378441T1 (de)
AU (1) AU2002365543A1 (de)
DE (1) DE60223587T2 (de)
ES (1) ES2297034T3 (de)
WO (1) WO2003046247A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1685626B1 (de) 2003-10-16 2010-01-13 Abb Research Ltd. BESCHICHTUNGEN AUS M(n+1)AX(n)-MATERIAL FÜR ELEKTRISCHE KONTAKTELEMENTE
JP2007518878A (ja) * 2003-12-22 2007-07-12 セコ ツールズ アクティエボラーグ 切削工具を被覆するための支持物体とその方法
US7553564B2 (en) * 2004-05-26 2009-06-30 Honeywell International Inc. Ternary carbide and nitride materials having tribological applications and methods of making same
JP4596878B2 (ja) * 2004-10-14 2010-12-15 キヤノン株式会社 構造体、電子放出素子、２次電池、電子源、画像表示装置、情報表示再生装置及びそれらの製造方法
SE0402865L (sv) * 2004-11-04 2006-05-05 Sandvik Intellectual Property Belagd produkt och framställningsmetod för denna
SE0402904L (sv) * 2004-11-26 2006-05-27 Sandvik Intellectual Property Belagd produkt och produktionsmetod för denna
EP1875556A4 (de) * 2005-04-25 2011-09-14 Impact Coatings Ab Chipkarte und chipkartenleser
JP2009526725A (ja) * 2006-02-17 2009-07-23 ニューキャッスル イノベイション リミテッド 結晶三元セラミック前駆体
FR2901721B1 (fr) * 2006-05-30 2008-08-22 Commissariat Energie Atomique Poudres de phase max et procede de fabrication des dites poudres
DE102007029683B4 (de) * 2007-06-27 2011-07-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Verfahren zur Messung von Zustandsgrößen an mechanischen Komponenten
SE531749C2 (sv) 2007-09-17 2009-07-28 Seco Tools Ab Metod att utfälla slitstarka skikt på hårdmetall med bågförångning och katod med Ti3SiC2 som huvudbeståndsdel
CN102017254A (zh) * 2008-02-27 2011-04-13 因派科特涂料公司 具有涂层的电极、其制造方法和材料的用途
DE102009023191A1 (de) * 2009-05-29 2010-12-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gehäuse mit einer Beschichtung
CN102933519B (zh) * 2010-04-30 2014-09-10 独立行政法人物质·材料研究机构 取向性max相陶瓷及其制造方法
EP2405029A1 (de) * 2010-07-02 2012-01-11 Brandenburgische Technische Universität Cottbus Verfahren zur Herstellung einer haft- und kratzfesten Schutzschicht auf einem metallischen Werkstück
WO2014149097A2 (en) * 2013-03-15 2014-09-25 United Technologies Corporation Maxmet composites for turbine engine component tips
EP2944624A1 (de) * 2014-05-14 2015-11-18 Haldor Topsøe A/S MAX-Phasenmaterialien frei von den Elementen Al und Si
EP2949875B1 (de) * 2014-05-27 2017-05-17 United Technologies Corporation Anstreifdichtung aus maxmet verbundpulver und dessen herstellungsmethode
US10199788B1 (en) 2015-05-28 2019-02-05 National Technology & Engineering Solutions Of Sandia, Llc Monolithic MAX phase ternary alloys for sliding electrical contacts
DE102018205183A1 (de) * 2018-04-06 2019-10-10 Siemens Aktiengesellschaft Oxidationsschutz für MAX-Phasen
CN109400171A (zh) * 2018-12-16 2019-03-01 冯良荣 一种制备max相材料的方法
EP3715499A1 (de) * 2019-03-29 2020-09-30 Picosun Oy Substratbeschichtung
CN110911705A (zh) * 2019-11-20 2020-03-24 上海大学 燃料电池复合材料双极板上的Ti3SiC2涂层的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961529A (en) 1987-12-24 1990-10-09 Kernforschungsanlage Julich Gmbh Method and components for bonding a silicon carbide molded part to another such part or to a metallic part
DE69020719T2 (de) * 1989-09-29 1995-11-02 Sumitomo Electric Industries Oberflächenbeschichtete hartwerkstoffe für schneidende und verschleissfeste werkzeuge.
JP2892231B2 (ja) * 1992-09-16 1999-05-17 健 増本 Ｔｉ−Ｓｉ−Ｎ系複合硬質膜及びその製造方法
US5428882A (en) * 1993-04-05 1995-07-04 The Regents Of The University Of California Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets
JP2793773B2 (ja) * 1994-05-13 1998-09-03 神鋼コベルコツール株式会社 耐摩耗性に優れた硬質皮膜、硬質皮膜被覆工具及び硬質皮膜被覆部材
US5885541A (en) * 1997-07-07 1999-03-23 Bates; Stephen Cuyler Technique for the fabrication of bulk porous diamond
US6063185A (en) 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6544674B2 (en) * 2000-08-28 2003-04-08 Boston Microsystems, Inc. Stable electrical contact for silicon carbide devices

Also Published As

Publication number Publication date
EP1448804B1 (de) 2007-11-14
ES2297034T3 (es) 2008-05-01
US7402206B2 (en) 2008-07-22
DE60223587D1 (de) 2007-12-27
CN1617945A (zh) 2005-05-18
CN100439554C (zh) 2008-12-03
DE60223587T2 (de) 2008-09-18
EP1448804A1 (de) 2004-08-25
AU2002365543A1 (en) 2003-06-10
WO2003046247A1 (en) 2003-06-05
US20050076825A1 (en) 2005-04-14

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